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DRV8263-Q1

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Controlador de motor de puente completo de 48 V con diagnóstico y detección de corriente interna par

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DRV8263-Q1

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Detalles del producto

Number of full bridges 1 Vs (min) (V) 4.5 Vs ABS (max) (V) 70 Peak output current (A) 26 RDS(ON) (HS + LS) (mΩ) 85 Sleep current (µA) 5 Control mode Independent 1/2-Bridge, PH/EN, PWM Control interface Hardware (GPIO), SPI Features Current Regulation, Current sense Amplifier, Integrated Current Sensing, Open-Load Detection Topology Integrated FET Rating Automotive TI functional safety category Functional Safety-Capable Operating temperature range (°C) -40 to 125
Number of full bridges 1 Vs (min) (V) 4.5 Vs ABS (max) (V) 70 Peak output current (A) 26 RDS(ON) (HS + LS) (mΩ) 85 Sleep current (µA) 5 Control mode Independent 1/2-Bridge, PH/EN, PWM Control interface Hardware (GPIO), SPI Features Current Regulation, Current sense Amplifier, Integrated Current Sensing, Open-Load Detection Topology Integrated FET Rating Automotive TI functional safety category Functional Safety-Capable Operating temperature range (°C) -40 to 125
VQFN-HR (VAK) 15 21 mm² 3.5 x 6

  • AEC-Q100 qualified for automotive applications:
    • Temperature grade 1: –40°C to +125°C, TA

  • Functional Safety-Compliant Targeted

    • Documentation available to aid functional safety system design
  • 4.5V to 65V (70V abs. max) operating range
  • DRV8263-Q1 MOSFET ON resistance (HS + LS): 85mΩ
  • Maximum output current = 28A
  • Configurable control modes
    • Single full-bridge, PH/EN, or PWM interface
    • Two half-bridges using Independent mode
  • 2 Interface options - HW or SPI
  • PWM frequency operation up to 100kHz with automatic dead time assertion
  • Configurable slew rate and spread spectrum clocking for low electromagnetic interference (EMI)
  • Integrated current sense (eliminates shunt resistor)
  • Proportional load current output on IPROPI

  • Die temperature monitoring on IPROPI (SPI only)

  • Configurable current regulation
  • Protection and diagnostic features with configurable fault reaction (latched or retry)
    • Load diagnostics in both the off-state and on-state to detect open load and short circuit
    • Voltage monitoring on supply (VM)
    • Over current protection

    • Over temperature warning (SPI only)

    • Over temperature protection

    • Powered off Braking

    • Fault indication on nFAULT pin
  • Supports 1.8V, 3.3V, 5V logic inputs
  • Low sleep current - 7µA typical at 25°C
  • Device family comparison table

  • AEC-Q100 qualified for automotive applications:
    • Temperature grade 1: –40°C to +125°C, TA

  • Functional Safety-Compliant Targeted

    • Documentation available to aid functional safety system design
  • 4.5V to 65V (70V abs. max) operating range
  • DRV8263-Q1 MOSFET ON resistance (HS + LS): 85mΩ
  • Maximum output current = 28A
  • Configurable control modes
    • Single full-bridge, PH/EN, or PWM interface
    • Two half-bridges using Independent mode
  • 2 Interface options - HW or SPI
  • PWM frequency operation up to 100kHz with automatic dead time assertion
  • Configurable slew rate and spread spectrum clocking for low electromagnetic interference (EMI)
  • Integrated current sense (eliminates shunt resistor)
  • Proportional load current output on IPROPI

  • Die temperature monitoring on IPROPI (SPI only)

  • Configurable current regulation
  • Protection and diagnostic features with configurable fault reaction (latched or retry)
    • Load diagnostics in both the off-state and on-state to detect open load and short circuit
    • Voltage monitoring on supply (VM)
    • Over current protection

    • Over temperature warning (SPI only)

    • Over temperature protection

    • Powered off Braking

    • Fault indication on nFAULT pin
  • Supports 1.8V, 3.3V, 5V logic inputs
  • Low sleep current - 7µA typical at 25°C
  • Device family comparison table

The DRV8263-Q1 is a wide-voltage, high-power fully integrated H-bridge driver for 24V and 48V automotive applications. Designed in a BiCMOS high-power process technology node, this device in a power package offers excellent power handling and thermal capability while providing compact package size, ease of layout, EMI control, accurate current sense, robustness, and diagnostic capability.

The device integrates a N-channel H-bridge, charge pump, high-side current sensing with regulation, current proportional output, and protection circuitry. The integrated sensing uses a current mirror, removing the need for shunt resistors, saving board area, and reducing system cost. A low-power sleep mode is provided to achieve low quiescent current.

The device offers voltage monitoring and load diagnostics, as well as protection features against overcurrent and overtemperature. Fault conditions are indicated on the nFAULT pin. The device is available in two variants: HW interface and SPI. The SPI variant offers more flexibility in device configuration and fault observability.

The DRV8263-Q1 is a wide-voltage, high-power fully integrated H-bridge driver for 24V and 48V automotive applications. Designed in a BiCMOS high-power process technology node, this device in a power package offers excellent power handling and thermal capability while providing compact package size, ease of layout, EMI control, accurate current sense, robustness, and diagnostic capability.

The device integrates a N-channel H-bridge, charge pump, high-side current sensing with regulation, current proportional output, and protection circuitry. The integrated sensing uses a current mirror, removing the need for shunt resistors, saving board area, and reducing system cost. A low-power sleep mode is provided to achieve low quiescent current.

The device offers voltage monitoring and load diagnostics, as well as protection features against overcurrent and overtemperature. Fault conditions are indicated on the nFAULT pin. The device is available in two variants: HW interface and SPI. The SPI variant offers more flexibility in device configuration and fault observability.
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Documentación técnica

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* Data sheet DRV8263-Q1 Automotive 65V H-Bridge Driver with Integrated Current Sense and Diagnostics datasheet (Rev. A) PDF | HTML 28 ago 2025
Application note Calculating Power Dissipation for a H-Bridge or Half Bridge Driver (Rev. A) PDF | HTML 22 jul 2021

Diseño y desarrollo

Para conocer los términos adicionales o los recursos necesarios, haga clic en cualquier título de abajo para ver la página de detalles cuando esté disponible.

Placa de evaluación

DRV8263H-Q1EVM — Módulo de evaluación DRV8263-Q1 para variante de hardware

El módulo de evaluación (EVM) DRV8263H-Q1 muestra las características y el rendimiento del paquete HotRod™ DRV8263H. El DRV8263H-Q1 cuenta con un controlador de medio puente totalmente integrado, diseñado para una amplia gama de aplicaciones automotrices. El controlador de medio puente está (...)
Guía del usuario: PDF | HTML
No disponible en TI.com
Placa de evaluación

DRV8263S-Q1EVM — Módulo de evaluación DRV8263-Q1 para variante SPI

El módulo de evaluación (EVM) DRV8263S-Q1 muestra las características y el rendimiento del paquete HotRod™ DRV8263S. El DRV8263S-Q1 cuenta con un controlador de medio puente totalmente integrado, diseñado para una amplia gama de aplicaciones automotrices. El controlador de medio puente está (...)

Guía del usuario: PDF | HTML
No disponible en TI.com
Diseños de referencia

TIDA-020094 — 48V zone reference design

This reference design demonstrates trends in advanced automotive 48V low voltage rail architectures. The design includes the 48V backbone architecture and 48V to 12V power conversion. The reference design highlights 48V load drivers across key products. These products include high side switches (...)
Design guide: PDF
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VQFN-HR (VAK) 15 Ultra Librarian
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Pedidos y calidad

Información incluida:
  • RoHS
  • REACH
  • Marcado del dispositivo
  • Acabado de plomo/material de la bola
  • Clasificación de nivel de sensibilidad a la humedad (MSL) / reflujo máximo
  • Estimaciones de tiempo medio entre fallas (MTBF)/fallas en el tiempo (FIT)
  • Contenido del material
  • Resumen de calificaciones
  • Monitoreo continuo de confiabilidad
Información incluida:
  • Lugar de fabricación
  • Lugar de ensamblaje

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