TLV2352M

Name: TLV2352M
Brand: TI
SKU: TLV2352M
Price: 21.164 USD

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Hoja de datos

document-pdfAcrobat TLV2352 Dual Low-Voltage Differential Comparators datasheet (Rev. D) (Inglés) PDF | HTML

TLV2352M

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Detalles del producto

Number of channels

2

Output type

Open-collector, Open-drain

Propagation delay time (µs)

0.65

Vs (max) (V)

8

Vs (min) (V)

2

Rating

Military

Iq per channel (typ) (mA)

0.07

Vos (offset voltage at 25°C) (max) (mV)

5

Rail-to-rail

In to V-

Operating temperature range (°C)

-55 to 125

Input bias current (±) (max) (nA)

20

VICR (max) (V)

7

VICR (min) (V)

0

Number of channels

2

Output type

Open-collector, Open-drain

Propagation delay time (µs)

0.65

Vs (max) (V)

8

Vs (min) (V)

2

Rating

Military

Iq per channel (typ) (mA)

0.07

Vos (offset voltage at 25°C) (max) (mV)

5

Rail-to-rail

In to V-

Operating temperature range (°C)

-55 to 125

Input bias current (±) (max) (nA)

20

VICR (max) (V)

7

VICR (min) (V)

0

CDIP (JG)

8

64.032 mm² 9.6 x 6.67

Wide range of supply voltages: 2V to 8V
Wide range of supply voltages: 2.7V to 8V (TLV2352IDR and TLV2352IPWR only)
Fully characterized at 3V and 5V
Very-low supply-current drain: 120µA typical at 3V
Output compatible with TTL, MOS, and CMOS
Fast response time: 200ns typical for TTL-level input step
High input impedance: 1012Ω typical
Extremely low input bias current: 5pA typical
Common-mode input voltage range includes ground
Built-in ESD protection

Wide range of supply voltages: 2V to 8V
Wide range of supply voltages: 2.7V to 8V (TLV2352IDR and TLV2352IPWR only)
Fully characterized at 3V and 5V
Very-low supply-current drain: 120µA typical at 3V
Output compatible with TTL, MOS, and CMOS
Fast response time: 200ns typical for TTL-level input step
High input impedance: 1012Ω typical
Extremely low input bias current: 5pA typical
Common-mode input voltage range includes ground
Built-in ESD protection

The TLV2352 consists of two independent, lowpower comparators specifically designed for single power-supply applications and operates with powersupply rails as low as 2V (2.7V TLV2352IDR and TLV2352IPWR only). When powered from a 3V supply, the typical supply current is only 120µA.

The TLV2352 is designed using the Texas Instruments CMOS technology and therefore features an extremely high input impedance (typically greater than 1012Ω), which allows direct interfacing with high-impedance sources. The outputs are N-channel open-drain configurations that require an external pullup resistor to provide a positive output voltage swing, and can be connected to achieve positivelogic wired-AND relationships. The TLV2352I is fully characterized at 3V and 5V for operation from –40°C to 85°C. The TLV2352M is fully characterized at 3V and 5V for operation from –55°C to 125°C.

The TLV2352 has internal electrostatic discharge (ESD) protection circuits and has been classified with a 1000V ESD rating using Human Body Model testing. However, care must be exercised in handling this device as exposure to ESD can result in degradation of the device parametric performance.

The TLV2352 consists of two independent, lowpower comparators specifically designed for single power-supply applications and operates with powersupply rails as low as 2V (2.7V TLV2352IDR and TLV2352IPWR only). When powered from a 3V supply, the typical supply current is only 120µA.

The TLV2352 is designed using the Texas Instruments CMOS technology and therefore features an extremely high input impedance (typically greater than 1012Ω), which allows direct interfacing with high-impedance sources. The outputs are N-channel open-drain configurations that require an external pullup resistor to provide a positive output voltage swing, and can be connected to achieve positivelogic wired-AND relationships. The TLV2352I is fully characterized at 3V and 5V for operation from –40°C to 85°C. The TLV2352M is fully characterized at 3V and 5V for operation from –55°C to 125°C.

The TLV2352 has internal electrostatic discharge (ESD) protection circuits and has been classified with a 1000V ESD rating using Human Body Model testing. However, care must be exercised in handling this device as exposure to ESD can result in degradation of the device parametric performance.

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