UCC27423-Q1

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Controlador de puerta de doble canal de 4 A/4 A con activación y entradas de inversión para automoci

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Hoja de datos

document-pdfAcrobat UCC2742x-Q1 Dual 4-A High-Speed Low-Side MOSFET Drivers With Enable datasheet (Rev. I) (Inglés) PDF | HTML

UCC27423-Q1

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Detalles del producto

Number of channels

2

Power switch

IGBT, MOSFET

Peak output current (A)

4

Input supply voltage (min) (V)

4

Input supply voltage (max) (V)

15

Features

Enable pin

Operating temperature range (°C)

-40 to 125

Rise time (ns)

20

Fall time (ns)

15

Propagation delay time (µs)

0.025

Input threshold

CMOS, TTL

Channel input logic

Inverting

Input negative voltage (V)

0

Rating

Automotive

Driver configuration

Dual inputs

Number of channels

2

Power switch

IGBT, MOSFET

Peak output current (A)

4

Input supply voltage (min) (V)

4

Input supply voltage (max) (V)

15

Features

Enable pin

Operating temperature range (°C)

-40 to 125

Rise time (ns)

20

Fall time (ns)

15

Propagation delay time (µs)

0.025

Input threshold

CMOS, TTL

Channel input logic

Inverting

Input negative voltage (V)

0

Rating

Automotive

Driver configuration

Dual inputs

SOIC (D)

8

29.4 mm² (4.9 mm × 6 mm)

HVSSOP (DGN)

8

14.7 mm² (3 mm × 4.9 mm)

Qualified for Automotive Applications
AEC-Q100 Qualified With the Following Results:
- Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range
- Device HBM ESD Classification Level 2
- Device CDM ESD Classification Level C6
Industry-Standard Pinout
Enable Functions for Each Driver
High-Current Drive Capability of ±4 A
Unique Bipolar and CMOS True Drive Output Stage Provides High Current at MOSFET Miller Thresholds
Inputs Independent of Supply Voltage Compatible With TTL and CMOS
20-ns Typical Rise and 15-ns Typical Fall Times With 1.8-nF Load
Typical Propagation Delay Times of 25 ns With Input Falling and 35 ns With Input Rising
4-V to 15-V Supply Voltage
Dual Outputs Can Be Paralleled for Higher Drive Current
Available in Thermally Enhanced MSOP PowerPAD™ Package
Rated From –40°C to +125°C

Qualified for Automotive Applications
AEC-Q100 Qualified With the Following Results:
- Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range
- Device HBM ESD Classification Level 2
- Device CDM ESD Classification Level C6
Industry-Standard Pinout
Enable Functions for Each Driver
High-Current Drive Capability of ±4 A
Unique Bipolar and CMOS True Drive Output Stage Provides High Current at MOSFET Miller Thresholds
Inputs Independent of Supply Voltage Compatible With TTL and CMOS
20-ns Typical Rise and 15-ns Typical Fall Times With 1.8-nF Load
Typical Propagation Delay Times of 25 ns With Input Falling and 35 ns With Input Rising
4-V to 15-V Supply Voltage
Dual Outputs Can Be Paralleled for Higher Drive Current
Available in Thermally Enhanced MSOP PowerPAD™ Package
Rated From –40°C to +125°C

The UCC2742x-Q1 family of devices are high-speed dual MOSFET drivers capable of delivering large peak currents into capacitive loads. Two standard logic options are offered: dual inverting and dual noninverting drivers. They are offered in the standard 8-pin SOIC (D) package. The thermally enhanced 8-pin PowerPAD Package MSOP package (DGN) drastically lowers the thermal resistance to improve long-term reliability.

Using a design that inherently minimizes shoot-through current, these drivers deliver 4-A current where it is needed most, at the Miller plateau region, during the MOSFET switching transition. A unique bipolar and MOSFET hybrid output stage in parallel also allows efficient current sourcing and sinking at low supply voltages.

The UCC2742x-Q1 provide enable (ENBL) functions to have better control of the operation of the driver applications. ENBA and ENBB are implemented on pins 1 and 8, which were previously left unused in the industry standard pinout. They are internally pulled up to V DD for active-high logic and can be left open for standard operation.

The UCC2742x-Q1 family of devices are high-speed dual MOSFET drivers capable of delivering large peak currents into capacitive loads. Two standard logic options are offered: dual inverting and dual noninverting drivers. They are offered in the standard 8-pin SOIC (D) package. The thermally enhanced 8-pin PowerPAD Package MSOP package (DGN) drastically lowers the thermal resistance to improve long-term reliability.

Using a design that inherently minimizes shoot-through current, these drivers deliver 4-A current where it is needed most, at the Miller plateau region, during the MOSFET switching transition. A unique bipolar and MOSFET hybrid output stage in parallel also allows efficient current sourcing and sinking at low supply voltages.

The UCC2742x-Q1 provide enable (ENBL) functions to have better control of the operation of the driver applications. ENBA and ENBB are implemented on pins 1 and 8, which were previously left unused in the industry standard pinout. They are internally pulled up to V DD for active-high logic and can be left open for standard operation.

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Documentación técnica

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Documentación principal	Tipo	Título	Opciones de formato	Fecha
*	Hoja de datos	UCC2742x-Q1 Dual 4-A High-Speed Low-Side MOSFET Drivers With Enable datasheet (Rev. I)	PDF \| HTML	28/11/2023
	Nota sobre la aplicación	Why use a Gate Drive Transformer?	PDF \| HTML	4/03/2024
	Nota sobre la aplicación	Review of Different Power Factor Correction (PFC) Topologies' Gate Driver Needs	PDF \| HTML	22/01/2024
	Nota sobre la aplicación	Static Magnet Power Supply Design for Magnetic Resonance Imaging Application	PDF \| HTML	22/01/2024
	Nota sobre la aplicación	Benefits of a Compact, Powerful, and Robust Low-Side Gate Driver	PDF \| HTML	10/11/2021
	Application brief	External Gate Resistor Selection Guide (Rev. A)		28/02/2020
	Application brief	Understanding Peak IOH and IOL Currents (Rev. A)		28/02/2020
	Nota sobre la aplicación	Improving Efficiency of DC-DC Conversion through Layout		7/05/2019
	Application brief	How to overcome negative voltage transients on low-side gate drivers' inputs		18/01/2019
	Application brief	High-Side Cutoff Switches for High-Power Automotive Applications (Rev. A)		26/11/2018
	Más documentación	Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A)		29/10/2018

Diseño y desarrollo

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