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UCC27712-Q1

ACTIVO

Controlador de puerta de medio puente de 1.8 A/2.8 A y 620 V con bloqueo para automoción

Detalles del producto

Bootstrap supply voltage (max) (V) 700 Power switch IGBT, MOSFET Input supply voltage (min) (V) 10 Input supply voltage (max) (V) 20 Peak output current (A) 2.8 Operating temperature range (°C) -40 to 150 Undervoltage lockout (typ) (V) 10 Rating Automotive Propagation delay time (µs) 0.1 Rise time (ns) 16 Fall time (ns) 10 Iq (mA) 0.25 Input threshold CMOS, TTL Channel input logic Noninverting Switch node voltage (V) -11 Features Dead time control, Interlock Driver configuration CMOS compatible, Dual, Noninverting, TTL compatible
Bootstrap supply voltage (max) (V) 700 Power switch IGBT, MOSFET Input supply voltage (min) (V) 10 Input supply voltage (max) (V) 20 Peak output current (A) 2.8 Operating temperature range (°C) -40 to 150 Undervoltage lockout (typ) (V) 10 Rating Automotive Propagation delay time (µs) 0.1 Rise time (ns) 16 Fall time (ns) 10 Iq (mA) 0.25 Input threshold CMOS, TTL Channel input logic Noninverting Switch node voltage (V) -11 Features Dead time control, Interlock Driver configuration CMOS compatible, Dual, Noninverting, TTL compatible
SOIC (D) 8 29.4 mm² (4.9 mm × 6 mm)
  • AEC-Q100 Qualified for Automotive Application
    • Device HBM Classification Level 1C
    • Device CDM Classification Level C4B
  • High-Side and Low-Side Configuration
  • Dual Inputs With Output Interlock and 150-ns Deadtime
  • Fully Operational up to 620-V, 700-V Absolute Maximum on HB Pin
  • 10-V to 20-V VDD Recommended Range
  • Peak Output Current 2.8-A Sink, 1.8-A Source
  • dv/dt Immunity of 50 V/ns
  • Logic Operational up to –11 V on HS Pin
  • Negative Voltage Tolerance On Inputs of –5 V
  • Large Negative Transient Safe Operating Area
  • UVLO Protection for Both Channels
  • Small Propagation Delay (100-ns Typical)
  • Delay Matching (12-ns Typical)
  • Low Quiescent Current
  • TTL and CMOS Compatible Inputs
  • Industry Standard SOIC-8 Package
  • All Parameters Specified Over Temperature Range, –40 °C to +125 °C
  • AEC-Q100 Qualified for Automotive Application
    • Device HBM Classification Level 1C
    • Device CDM Classification Level C4B
  • High-Side and Low-Side Configuration
  • Dual Inputs With Output Interlock and 150-ns Deadtime
  • Fully Operational up to 620-V, 700-V Absolute Maximum on HB Pin
  • 10-V to 20-V VDD Recommended Range
  • Peak Output Current 2.8-A Sink, 1.8-A Source
  • dv/dt Immunity of 50 V/ns
  • Logic Operational up to –11 V on HS Pin
  • Negative Voltage Tolerance On Inputs of –5 V
  • Large Negative Transient Safe Operating Area
  • UVLO Protection for Both Channels
  • Small Propagation Delay (100-ns Typical)
  • Delay Matching (12-ns Typical)
  • Low Quiescent Current
  • TTL and CMOS Compatible Inputs
  • Industry Standard SOIC-8 Package
  • All Parameters Specified Over Temperature Range, –40 °C to +125 °C

The UCC27712-Q1 is a 620-V high-side and low-side gate driver with 1.8-A source, 2.8-A sink current, targeted to drive power MOSFETs or IGBTs.

The recommended VDD operating voltage is 10-V to 20-V for IGBT’s and 10-V to 17-V for power MOSFETs.

The UCC27712-Q1 includes protection features where the outputs are held low when the inputs are left open or when the minimum input pulse width specification is not met. Interlock and deadtime functions prevent both outputs from being turned on simultaneously. In addition, the device accepts a wide range bias supply range from 10 V to 22 V, and offers UVLO protection for both the VDD and HB bias supply.

Developed with TI’s state of the art high-voltage device technology, the device features robust drive with excellent noise and transient immunity including large negative voltage tolerance on its inputs, high dV/dt tolerance, wide negative transient safe operating area (NTSOA) on the switch node (HS), and interlock.

The device consists of one ground-referenced channel (LO) and one floating channel (HO) which is designed for operating with bootstrap or isolated power supplies. The device features fast propagation delays and excellent delay matching between both channels. On the UCC27712-Q1, each channel is controlled by its respective input pins, HI and LI.

The UCC27712-Q1 is a 620-V high-side and low-side gate driver with 1.8-A source, 2.8-A sink current, targeted to drive power MOSFETs or IGBTs.

The recommended VDD operating voltage is 10-V to 20-V for IGBT’s and 10-V to 17-V for power MOSFETs.

The UCC27712-Q1 includes protection features where the outputs are held low when the inputs are left open or when the minimum input pulse width specification is not met. Interlock and deadtime functions prevent both outputs from being turned on simultaneously. In addition, the device accepts a wide range bias supply range from 10 V to 22 V, and offers UVLO protection for both the VDD and HB bias supply.

Developed with TI’s state of the art high-voltage device technology, the device features robust drive with excellent noise and transient immunity including large negative voltage tolerance on its inputs, high dV/dt tolerance, wide negative transient safe operating area (NTSOA) on the switch node (HS), and interlock.

The device consists of one ground-referenced channel (LO) and one floating channel (HO) which is designed for operating with bootstrap or isolated power supplies. The device features fast propagation delays and excellent delay matching between both channels. On the UCC27712-Q1, each channel is controlled by its respective input pins, HI and LI.

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Documentación técnica

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Documentación principal Tipo Título Opciones de formato Descargar la versión más reciente en inglés Fecha
* Hoja de datos UCC27712-Q1 Automotive, 620-V, 1.8-A, 2.8-A High-Side Low-Side Gate Driver with Interlock datasheet PDF | HTML 14/02/2017
Nota sobre la aplicación Selecting Gate Drivers for HVAC Systems (Rev. A) PDF | HTML 7/11/2025
Nota sobre la aplicación Using Half-Bridge Gate Driver to Achieve 100% Duty Cycle for High Side FET PDF | HTML 25/03/2024
Nota sobre la aplicación Review of Different Power Factor Correction (PFC) Topologies' Gate Driver Needs PDF | HTML 22/01/2024
Nota sobre la aplicación Bootstrap Circuitry Selection for Half Bridge Configurations (Rev. A) PDF | HTML 8/09/2023
Informe How to design heating and cooling systems for HEV/EVs (Rev. A) PDF | HTML 21/06/2023
Nota sobre la aplicación Comparative Analysis of Two Different Methods for Gate-Drive Current Boosting (Rev. A) PDF | HTML 17/02/2022
Nota sobre la aplicación Voltage Fed Full Bridge DC-DC & DC-AC Converter High-Freq Inverter Using C2000 (Rev. D) 7/04/2021
Nota sobre la aplicación Implementing High-Side Switches Using Half-Bridge Gate Drivers for 48-V Battery. 12/05/2020
Application brief External Gate Resistor Selection Guide (Rev. A) 28/02/2020
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 28/02/2020
Artículo técnico Designing a smarter sunroof PDF | HTML 10/01/2019
Más documentación Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 29/10/2018

Diseño y desarrollo

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Placa de evaluación

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Pedidos y calidad

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