제품 상세 정보

Number of full bridges 1 Vs (min) (V) 1.8 Vs ABS (max) (V) 12 Peak output current (A) 8 RDS(ON) (HS + LS) (mΩ) 85 Sleep current (µA) 0.007 Control mode Independent 1/2-Bridge, PH/EN, PWM Control interface Hardware (GPIO) Features Half-bridge, Low-Power Sleep Mode Topology Integrated FET Rating Catalog Operating temperature range (°C) -40 to 125
Number of full bridges 1 Vs (min) (V) 1.8 Vs ABS (max) (V) 12 Peak output current (A) 8 RDS(ON) (HS + LS) (mΩ) 85 Sleep current (µA) 0.007 Control mode Independent 1/2-Bridge, PH/EN, PWM Control interface Hardware (GPIO) Features Half-bridge, Low-Power Sleep Mode Topology Integrated FET Rating Catalog Operating temperature range (°C) -40 to 125
WSON (DSG) 8 4 mm² 2 x 2
  • N-Channel H-bridge motor driver
  • 1.8V to 11V operating supply voltage range
  • High output current capability: 8A peak
  • 80mΩ RDS(ON) (High-Side + Low-Side)
    • 40mΩ per FET
    • Parallel ½ Bridge Mode RDS(on): 20mΩ (HS1||HS2)
  • 120nA Ultra low-power sleep mode
    • <120nA at VVM = 5V, VVCC = 3.3V, TJ = 25°C
    • Timed autosleep mode to reduce GPIO
  • Supports 1.8V, 3.3V, and 5V logic inputs
  • PWM, PH/EN, independent ½ bridge, parallel ½ bridge for flexibility and reduced GPIO
  • Protection features
    • Undervoltage lockout (UVLO)
    • Overcurrent protection (OCP)
    • Thermal shutdown (TSD)
  • Can drive various types of loads:
    • One bidirectional brushed DC motor
    • Two unidirectional brushed DC motors
    • Single-coil or dual-coil latching relays
    • Push-pull and bistable solenoids
    • Other resistive, inductive, or LED loads
  • Family of devices. See Device Comparison for details.
    • DRV8210: 1.65-11V, 1Ω, multiple interfaces
    • DRV8210P: Sleep pin, PWM interface
    • DRV8212: 1.65-11V, 280mΩ, multiple interfaces
    • DRV8212P: Sleep pin, PWM interface
    • DRV8218: 1.8-11V, 80mΩ, multiple interfaces
    • DRV8220: 4.5-18V, 1Ω, multiple interfaces
  • N-Channel H-bridge motor driver
  • 1.8V to 11V operating supply voltage range
  • High output current capability: 8A peak
  • 80mΩ RDS(ON) (High-Side + Low-Side)
    • 40mΩ per FET
    • Parallel ½ Bridge Mode RDS(on): 20mΩ (HS1||HS2)
  • 120nA Ultra low-power sleep mode
    • <120nA at VVM = 5V, VVCC = 3.3V, TJ = 25°C
    • Timed autosleep mode to reduce GPIO
  • Supports 1.8V, 3.3V, and 5V logic inputs
  • PWM, PH/EN, independent ½ bridge, parallel ½ bridge for flexibility and reduced GPIO
  • Protection features
    • Undervoltage lockout (UVLO)
    • Overcurrent protection (OCP)
    • Thermal shutdown (TSD)
  • Can drive various types of loads:
    • One bidirectional brushed DC motor
    • Two unidirectional brushed DC motors
    • Single-coil or dual-coil latching relays
    • Push-pull and bistable solenoids
    • Other resistive, inductive, or LED loads
  • Family of devices. See Device Comparison for details.
    • DRV8210: 1.65-11V, 1Ω, multiple interfaces
    • DRV8210P: Sleep pin, PWM interface
    • DRV8212: 1.65-11V, 280mΩ, multiple interfaces
    • DRV8212P: Sleep pin, PWM interface
    • DRV8218: 1.8-11V, 80mΩ, multiple interfaces
    • DRV8220: 4.5-18V, 1Ω, multiple interfaces

The DRV8218 is an integrated H-bridge motor driver featuring four N-Channel power FETs, a charge pump regulator, and built-in protection circuitry. A tripler charge pump architecture enables operation down to 1.8V, maintaining stable RDS(on) even at low battery voltages. All capacitors are integrated, minimizing PCB footprint and enabling 100% duty cycle operation.

The device supports three control interface modes - PWM (IN1/IN2), phase/enable (PH/EN), and independent half-bridge - as well as a parallel half-bridge mode. Each interface includes a low-power sleep mode that reduces quiescent current to under 120nA by shutting down most internal circuitry.

Output current reaches up to 8A peak, with a logic supply range of 1.8V to 5.5V and a motor supply range of 1.8V to 11V. Built-in protection includes undervoltage lockout (UVLO), overcurrent protection (OCP), and thermal shutdown (TSD). The DRV8218 is part of a pin-to-pin compatible family with scalable RDS(on) and supply voltage options. See Device Comparison for details, or explore TI’s full portfolio of brushed motor drivers at ti.com.

The DRV8218 is an integrated H-bridge motor driver featuring four N-Channel power FETs, a charge pump regulator, and built-in protection circuitry. A tripler charge pump architecture enables operation down to 1.8V, maintaining stable RDS(on) even at low battery voltages. All capacitors are integrated, minimizing PCB footprint and enabling 100% duty cycle operation.

The device supports three control interface modes - PWM (IN1/IN2), phase/enable (PH/EN), and independent half-bridge - as well as a parallel half-bridge mode. Each interface includes a low-power sleep mode that reduces quiescent current to under 120nA by shutting down most internal circuitry.

Output current reaches up to 8A peak, with a logic supply range of 1.8V to 5.5V and a motor supply range of 1.8V to 11V. Built-in protection includes undervoltage lockout (UVLO), overcurrent protection (OCP), and thermal shutdown (TSD). The DRV8218 is part of a pin-to-pin compatible family with scalable RDS(on) and supply voltage options. See Device Comparison for details, or explore TI’s full portfolio of brushed motor drivers at ti.com.

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* Data sheet DRV8218 11V 8A H-Bridge Motor Driver with PWM, PH/EN, and Half-Bridge Control Interfaces and Low-Power Sleep Mode datasheet PDF | HTML 2026/05/05

설계 및 개발

추가 조건 또는 필수 리소스는 사용 가능한 경우 아래 제목을 클릭하여 세부 정보 페이지를 확인하세요.

평가 보드

DRV8212EVM — DRV8212 저전압 절전 모드를 지원하는 저전압 H 브리지 모터 드라이버 평가 모듈

DRV8212 평가 모듈(EVM)을 사용하면 DRV8212 모터 드라이버를 쉽게 평가할 수 있습니다.

DRV8212은 N채널 H 브리지, 충전 펌프 레귤레이터 및 보호 회로를 통합합니다. 이 장치는 PWM(IN1/in2), 위상/활성화(PH/EN), 독립 하프 브리지 및 병렬 하프 브리지 제어 모드를 지원합니다.

EVM에는 입력 제어 핀(PH/IN1, EN/in2)의 듀티 사이클을 설정하는 데 사용되는 전위차계가 장착되어 있습니다.

사용 설명서: PDF
TI.com에서 구매할 수 없음
패키지 CAD 기호, 풋프린트 및 3D 모델
WSON (DSG) 8 Ultra Librarian

주문 및 품질

포함된 정보:
  • RoHS
  • REACH
  • 디바이스 마킹
  • 납 마감/볼 재질
  • MSL 등급/피크 리플로우
  • MTBF/FIT 예측
  • 물질 성분
  • 인증 요약
  • 지속적인 신뢰성 모니터링
포함된 정보:
  • 팹 위치
  • 조립 위치

권장 제품에는 본 TI 제품과 관련된 매개 변수, 평가 모듈 또는 레퍼런스 디자인이 있을 수 있습니다.

지원 및 교육

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