SN65C3222E

Name: SN65C3222E
Brand: TI
SKU: SN65C3222E
Price: 1.515 USD

활성

+/-15kV IEC-ESD 보호를 지원하는 3~5.5V 듀얼 채널 1Mbps RS-232 라인 드라이버/리시버

지금 주문

데이터 시트

document-pdfAcrobat 3-V to 5.5-V Multichannel RS-232 Line Drivers and Receiverswith ±15-kV ESD Protection datasheet (Rev. B) (영어) PDF | HTML

SN65C3222E

활성

데이터 시트

지금 주문

제품 상세 정보

Drivers per package

2

Receivers per package

2

Logic voltage (min) (V)

3.3

Data rate (max) (Mbps)

1

Main supply voltage (nom) (V)

3.3, 5

Features

Auto-Powerdown

ESD HBM (kV)

15

Rating

Catalog

Operating temperature range (°C)

-40 to 85

Vout (typ) (V)

5.4

Drivers per package

2

Receivers per package

2

Logic voltage (min) (V)

3.3

Data rate (max) (Mbps)

1

Main supply voltage (nom) (V)

3.3, 5

Features

Auto-Powerdown

ESD HBM (kV)

15

Rating

Catalog

Operating temperature range (°C)

-40 to 85

Vout (typ) (V)

5.4

SOIC (DW)

20

131.84 mm² 12.8 x 10.3

SSOP (DB)

20

56.16 mm² 7.2 x 7.8

TSSOP (PW)

20

41.6 mm² 6.5 x 6.4

ESD Protection for RS-232 bus pins
- ±15-kV Human-body model (HBM)
- ±8-kV IEC 61000-4-2, Contact discharge
- ±15-kV IEC 61000-4-2, Air-gap discharge
Meet or exceed the requirements of TIA/EIA-232-F and ITU v.28 standards
Operate with 3-V to 5.5-V V_CC supply
Operate up to 1000 kbit/s
Two drivers and two receivers
Low standby current . . . 1 µA Typ
External capacitors . . . 4 × 0.1 µF
Accepts 5-V Logic Input with 3.3-V supply

ESD Protection for RS-232 bus pins
- ±15-kV Human-body model (HBM)
- ±8-kV IEC 61000-4-2, Contact discharge
- ±15-kV IEC 61000-4-2, Air-gap discharge
Meet or exceed the requirements of TIA/EIA-232-F and ITU v.28 standards
Operate with 3-V to 5.5-V V_CC supply
Operate up to 1000 kbit/s
Two drivers and two receivers
Low standby current . . . 1 µA Typ
External capacitors . . . 4 × 0.1 µF
Accepts 5-V Logic Input with 3.3-V supply

The SN65C3222E and SN75C3222E consist of two line drivers, two line receivers, and a dual charge-pump circuit with ±15-kV ESD protection pin to pin (serial-port connection pins, including GND).

The devices meet the requirements of TIA/EIA-232-F and provide the electrical interface between an asynchronous communication controller and the serial-port connector. The charge pump and four small external capacitors allow operation from a single 3-V to 5.5-V supply. The devices operate at typical data signaling rates up to 1000 kbit/s and are improved drop-in replacements for industry-popular ’3222 two-driver, two-receiver functions.

The SN65C3222E and SN75C3222E can be placed in the power-down mode by setting the power-down ( PWRDOWN) input low, which draws only 1 µA from the power supply. When the devices are powered down, the receivers remain active while the drivers are placed in the high-impedance state. Also, during power down, the onboard charge pump is disabled; V+ is lowered to V_CC, and V– is raised toward GND. Receiver outputs also can be placed in the high-impedance state by setting enable ( EN) high.

The SN65C3222E and SN75C3222E consist of two line drivers, two line receivers, and a dual charge-pump circuit with ±15-kV ESD protection pin to pin (serial-port connection pins, including GND).

The devices meet the requirements of TIA/EIA-232-F and provide the electrical interface between an asynchronous communication controller and the serial-port connector. The charge pump and four small external capacitors allow operation from a single 3-V to 5.5-V supply. The devices operate at typical data signaling rates up to 1000 kbit/s and are improved drop-in replacements for industry-popular ’3222 two-driver, two-receiver functions.

The SN65C3222E and SN75C3222E can be placed in the power-down mode by setting the power-down ( PWRDOWN) input low, which draws only 1 µA from the power supply. When the devices are powered down, the receivers remain active while the drivers are placed in the high-impedance state. Also, during power down, the onboard charge pump is disabled; V+ is lowered to V_CC, and V– is raised toward GND. Receiver outputs also can be placed in the high-impedance state by setting enable ( EN) high.

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