TPS28225
- Drives Two N-Channel MOSFETs with 14ns Adaptive Dead Time
- Wide Gate Drive Voltage: 4.5V Up to 8.8V With Best Efficiency at 7V to 8V
- Wide Power System Train Input Voltage: 3V Up to 27V
- Wide Input PWM Signals: 2.0V up to 13.2V Amplitude
- Capable to Drive MOSFETs with ≥40A Current per Phase
- High Frequency Operation: 14ns Propagation Delay and 10ns Rise/Fall Time Allow FSW – 2MHz
- Capable to Propagate <30ns Input PWM Pulses
- Low-Side Driver Sink On-Resistance (0.4Ω) Prevents dV/dT Related Shoot-Through Current
- 3-State PWM Input for Power Stage Shutdown
- Space Saving Enable (Input) and Power Good (Output) Signals on Same Pin
- Thermal Shutdown
- UVLO Protection
- Internal Bootstrap Diode
- Economical SOIC-8 and Thermally Enhanced 3mm x 3mm VSON-8 Packages
- High Performance Replacement for Popular 3-State Input Drivers
The TPS28225 is a high-speed driver for N-channel complimentary driven power MOSFETs with adaptive dead-time control. This driver is optimized for use in variety of high-current one and multi-phase DC-to-DC converters. The TPS28225 is a solution that provides high efficiency, small size and low EMI emissions.
The efficiency is achieved by up to 8.8V gate drive voltage, 14ns adaptive dead-time control, 14ns propagation delays and high-current 2A source and 4A sink drive capability. The 0.4Ω impedance for the lower gate driver holds the gate of power MOSFET below its threshold and ensures no shoot-through current at high dV/dt phase node transitions. The bootstrap capacitor charged by an internal diode allows use of N-channel MOSFETs in a half-bridge configuration.
관심 가지실만한 유사 제품
다른 핀 출력을 지원하지만 비교 대상 장치와 동일한 기능.
기술 자료
| 상위 문서 | 유형 | 직함 | 형식 옵션 | 최신 영어 버전 다운로드 | 날짜 |
|---|---|---|---|---|---|
| * | 데이터 시트 | TPS28225 High-Frequency 4A Sink Synchronous MOSFET Driver datasheet (Rev. E) | PDF | HTML | 2024. 1. 19 | |
| 애플리케이션 노트 | Using Half-Bridge Gate Driver to Achieve 100% Duty Cycle for High Side FET | PDF | HTML | 2024. 3. 25 | ||
| 애플리케이션 노트 | Bootstrap Circuitry Selection for Half Bridge Configurations (Rev. A) | PDF | HTML | 2023. 9. 8 | ||
| 애플리케이션 노트 | Comparative Analysis of Two Different Methods for Gate-Drive Current Boosting (Rev. A) | PDF | HTML | 2022. 2. 17 | ||
| Application brief | External Gate Resistor Selection Guide (Rev. A) | 2020. 2. 28 | |||
| Application brief | Understanding Peak IOH and IOL Currents (Rev. A) | 2020. 2. 28 | |||
| 추가 자료 | Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) | 2018. 10. 29 | |||
| 선택 가이드 | Power Management Guide 2018 (Rev. R) | 2018. 6. 25 | |||
| 추가 자료 | Power Loss Calculation for Sync Buck Converter | 2007. 2. 14 |
설계 및 개발
추가 조건 또는 필수 리소스는 사용 가능한 경우 아래 제목을 클릭하여 세부 정보 페이지를 확인하세요.
| 패키지 | 핀 | CAD 기호, 풋프린트 및 3D 모델 |
|---|---|---|
| VSON (DRB) | 8 | Ultra Librarian |
| SOIC (D) | 8 | Ultra Librarian |
주문 및 품질
권장 제품에는 본 TI 제품과 관련된 매개 변수, 평가 모듈 또는 레퍼런스 디자인이 있을 수 있습니다.