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LM5109B-Q1

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Automotive 1-A, 100-V half bridge gate driver with 8-V UVLO and high noise immunity

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Data sheet

LM5109B-Q1

ACTIVE
Data sheet Order now

Product details

Bootstrap supply voltage (max) (V) 90 Power switch MOSFET Input supply voltage (min) (V) 8 Input supply voltage (max) (V) 14 Peak output current (A) 1 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 8 Rating Automotive Propagation delay time (µs) 0.03 Rise time (ns) 15 Fall time (ns) 15 Iq (mA) 0.01 Input threshold TTL Channel input logic TTL Switch node voltage (V) -1 Driver configuration Dual inputs
Bootstrap supply voltage (max) (V) 90 Power switch MOSFET Input supply voltage (min) (V) 8 Input supply voltage (max) (V) 14 Peak output current (A) 1 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 8 Rating Automotive Propagation delay time (µs) 0.03 Rise time (ns) 15 Fall time (ns) 15 Iq (mA) 0.01 Input threshold TTL Channel input logic TTL Switch node voltage (V) -1 Driver configuration Dual inputs
WSON (NGT) 8 16 mm² (4 mm × 4 mm)
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results
    • Device Temperature Grade 1
    • Device HBM ESD Classification Level 1C
    • Device CDM ESD Classification Level C4A
  • Drives Both a High-Side and Low-Side N-Channel
    MOSFET
  • 1-A Peak Output Current (1.0-A Sink/1.0-A
    Source)
  • Independent TTL/CMOS Compatible Inputs
  • Bootstrap Supply Voltage to 108-V DC
  • Fast Propagation Times (30 ns Typical)
  • Drives 1000-pF Load with 15-ns Rise and Fall
    Times
  • Excellent Propagation Delay Matching (2 ns
    Typical)
  • Supply Rail Under-Voltage Lockout
  • Low Power Consumption
  • Thermally-Enhanced WSON-8 Package
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results
    • Device Temperature Grade 1
    • Device HBM ESD Classification Level 1C
    • Device CDM ESD Classification Level C4A
  • Drives Both a High-Side and Low-Side N-Channel
    MOSFET
  • 1-A Peak Output Current (1.0-A Sink/1.0-A
    Source)
  • Independent TTL/CMOS Compatible Inputs
  • Bootstrap Supply Voltage to 108-V DC
  • Fast Propagation Times (30 ns Typical)
  • Drives 1000-pF Load with 15-ns Rise and Fall
    Times
  • Excellent Propagation Delay Matching (2 ns
    Typical)
  • Supply Rail Under-Voltage Lockout
  • Low Power Consumption
  • Thermally-Enhanced WSON-8 Package

The LM5109B-Q1 is a cost effective, high voltage gate driver designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with rail voltages up to 90 V. The outputs are independently controlled with TTL/CMOS compatible logic input thresholds. The robust level shift technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Under-voltage lockout is provided on both the low-side and the high-side power rails. The device is available in the thermally enhanced WSON(8) packages.

The LM5109B-Q1 is a cost effective, high voltage gate driver designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with rail voltages up to 90 V. The outputs are independently controlled with TTL/CMOS compatible logic input thresholds. The robust level shift technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Under-voltage lockout is provided on both the low-side and the high-side power rails. The device is available in the thermally enhanced WSON(8) packages.
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Technical documentation

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Top documentation Type Title Format options Date
* Data sheet LM5109B-Q1 High Voltage 1-A Peak Half Bridge Gate Driver datasheet (Rev. A) PDF | HTML Dec 8, 2015
Functional safety information LM5109B-Q1 Functional Safety FIT Rate, FMD and Pin FMA PDF | HTML Sep 30, 2024
Application note Using Half-Bridge Gate Driver to Achieve 100% Duty Cycle for High Side FET PDF | HTML Mar 25, 2024
Application note Challenges and Solutions for Half-Bridge Gate Drivers in Bidirectional DC-DC Converters PDF | HTML Jan 24, 2024
Application note Bootstrap Circuitry Selection for Half Bridge Configurations (Rev. A) PDF | HTML Sep 8, 2023
Application note Comparative Analysis of Two Different Methods for Gate-Drive Current Boosting (Rev. A) PDF | HTML Feb 17, 2022
Application note Voltage Fed Full Bridge DC-DC & DC-AC Converter High-Freq Inverter Using C2000 (Rev. D) Apr 7, 2021
Application note Implementing High-Side Switches Using Half-Bridge Gate Drivers for 48-V Battery. May 12, 2020
Application brief External Gate Resistor Selection Guide (Rev. A) Feb 28, 2020
Application brief Understanding Peak IOH and IOL Currents (Rev. A) Feb 28, 2020
Application brief Small Price Competitive 100-V Driver for 48-V BLDC Motor Drives Oct 22, 2019
Application note Maximizing DC/DC converter designs with UCC27282 Jan 18, 2019
Application note UCC27282 Improving motor drive system robustness Jan 11, 2019
More literature Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) Oct 29, 2018

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WSON (NGT) 8 Ultra Librarian
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