產品詳細資料

Rating Catalog Architecture Integrated FET Control interface 6xPWM Peak output current (A) 5 RDS(ON) (HS + LS) (mΩ) 250 VDS (max) (V) 650 Features Integrated FETs Operating temperature range (°C) -40 to 125
Rating Catalog Architecture Integrated FET Control interface 6xPWM Peak output current (A) 5 RDS(ON) (HS + LS) (mΩ) 250 VDS (max) (V) 650 Features Integrated FETs Operating temperature range (°C) -40 to 125
VQFN (REN) 68 144 mm² 12 x 12
  • Three-phase PWM motor driver with integrated 650V enhancement mode GaNFETs
  • Up to 450V operating voltage
    • 650V absolute maximum voltage
  • High output current capability: 5A Peak current
  • Low conduction loss: Low on-state resistance per GaN FET: 205mΩ RDS(ON) at TA = 25°C
  • Low switching loss: Zero reverse recovery, low output capacitance, slew rate control
  • Low distortion: Ultra low propagation delay < 135ns, Ultra low adaptive dead time < 200ns
  • Integrated gate drives with slew rate control of phase node voltage
    • Slew rate options from 5V/ns to 40V/ns
  • 500ns minimum low side on time support with integrated fast bootstrap GaN rectifier
  • Low-side GaN FET open source pins to support 1- or 2- or 3-shunt current sensing
  • Supports up to 60kHz hard switching
  • Integrates a 11MHz, 15V/µs amplifier for single shunt current sensing
  • Supports 3.3V and 5V logic inputs
  • Integrated BRAKE functionality to turn on all low side GaN FETs together
  • Integrated temperature sensor
  • >1.6mm clearance between OUTx and OUTx, VM and OUTx and OUTx and PGND.
  • 2mm clearance between VM and PGND
  • Integrated protection features
    • GVDD and bootstrap under voltage lockout
    • Over current protection for each GaN FET
    • Over temperature protection
    • PWM input dead time
    • Current limit protection using integrated comparators for all three phases
    • Fault condition indication pin (HV_nFAULT)
  • Three-phase PWM motor driver with integrated 650V enhancement mode GaNFETs
  • Up to 450V operating voltage
    • 650V absolute maximum voltage
  • High output current capability: 5A Peak current
  • Low conduction loss: Low on-state resistance per GaN FET: 205mΩ RDS(ON) at TA = 25°C
  • Low switching loss: Zero reverse recovery, low output capacitance, slew rate control
  • Low distortion: Ultra low propagation delay < 135ns, Ultra low adaptive dead time < 200ns
  • Integrated gate drives with slew rate control of phase node voltage
    • Slew rate options from 5V/ns to 40V/ns
  • 500ns minimum low side on time support with integrated fast bootstrap GaN rectifier
  • Low-side GaN FET open source pins to support 1- or 2- or 3-shunt current sensing
  • Supports up to 60kHz hard switching
  • Integrates a 11MHz, 15V/µs amplifier for single shunt current sensing
  • Supports 3.3V and 5V logic inputs
  • Integrated BRAKE functionality to turn on all low side GaN FETs together
  • Integrated temperature sensor
  • >1.6mm clearance between OUTx and OUTx, VM and OUTx and OUTx and PGND.
  • 2mm clearance between VM and PGND
  • Integrated protection features
    • GVDD and bootstrap under voltage lockout
    • Over current protection for each GaN FET
    • Over temperature protection
    • PWM input dead time
    • Current limit protection using integrated comparators for all three phases
    • Fault condition indication pin (HV_nFAULT)

The DRV7308 is a three-phase intelligent power module (IPM) that consists of 205mΩ, 650V e-mode Gallium-Nitride (GaN) for driving three-phase BLDC/PMSM motors up to 450V DC rails. The applications include field-oriented control (FOC), sinusoidal current control, and trapezoidal (six step) current control of BLDC motors. The device helps to achieve more than 99% efficiency for a 3-phase modulated, FOC-driven, 250W motor drive application in a QFN 12mm x 12mm package at 20kHz switching frequency, eliminating the need for heat sink. The device helps to achieve ultra quiet operation, with very low dead time. The integrated bootstrap rectifier with bootstrap current limit, eliminates the need for an external bootstrap diode.

The DRV7308 is a three-phase intelligent power module (IPM) that consists of 205mΩ, 650V e-mode Gallium-Nitride (GaN) for driving three-phase BLDC/PMSM motors up to 450V DC rails. The applications include field-oriented control (FOC), sinusoidal current control, and trapezoidal (six step) current control of BLDC motors. The device helps to achieve more than 99% efficiency for a 3-phase modulated, FOC-driven, 250W motor drive application in a QFN 12mm x 12mm package at 20kHz switching frequency, eliminating the need for heat sink. The device helps to achieve ultra quiet operation, with very low dead time. The integrated bootstrap rectifier with bootstrap current limit, eliminates the need for an external bootstrap diode.

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類型 標題 日期
* Data sheet DRV7308 Three Phase 650V, 5A, GaN Intelligent Power Module datasheet PDF | HTML 2024年 5月 29日
Technical article Achieving household energy efficiency and cost savings with GaN-based motor system designs PDF | HTML 2024年 6月 7日
White paper How Three-Phase Integrated GaN Technology Maximizes Motor-Drive Performance PDF | HTML 2024年 6月 6日
EVM User's guide DRV7308 Evaluation Module User's Guide 2024年 5月 21日

設計與開發

如需其他條款或必要資源,請按一下下方的任何標題以檢視詳細頁面 (如有)。

開發板

DRV7308EVM — DRV7308 評估模組

DRV7308EVM 是專為全面評估 DRV7308 馬達驅動器而設計的模組。此裝置為一款 250W、450V 整合式三重氮化鎵 (GaN) FET 半橋式閘極驅動器,適合馬達驅動器應用。DRV7308EVM 提供三種 650V E-mode GaN 整合式半橋,可直接驅動三相無刷 DC 馬達。


此套件需要 C2000™ LAUNCHXL-F2800137 LaunchPad™,用於操作和監控 DRV7308 驅動器。PWM、故障反應和進一步的裝置控制由 LAUNCHXL-F2800137 模組提供。

使用指南: PDF
參考設計

TIDA-010273 — 250W 馬達逆變器參考設計

此參考設計為用於主要電器或類似應用的 250W 馬達驅動器,設計中呈現無散熱器的 GaN IPM DRV7308 架構高效率馬達逆變器,還展示了具有 UCC28911 的低待機功耗設計。此參考設計展示透過具有 FAST™ 軟體編碼器或 eSMO 的三相 PMSM 來實作無感測器 FOC 控制的方法。此參考設計採用模組化設計,在同一個主機板上同時支援 C2000™ MCU 和 MSPM0 系列微控制器子板。此參考設計提供的軟硬體皆經過測試且隨時可用,有助於加快開發至上市時間。設計詳細資訊和測試結果可在此設計指南中找到。
Design guide: PDF
封裝 針腳 CAD 符號、佔位空間與 3D 模型
VQFN (REN) 68 Ultra Librarian

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  • 鉛塗層/球物料
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