產品詳細資料

Number of full bridges 1 Vs (min) (V) 5.9 Vs ABS (max) (V) 47 Sleep current (µA) 9 Control mode PH/EN, PWM Control interface Hardware (GPIO) Features Current Regulation, Current sense Amplifier, Smart Gate Drive Topology External FET Rating Catalog Operating temperature range (°C) -40 to 125
Number of full bridges 1 Vs (min) (V) 5.9 Vs ABS (max) (V) 47 Sleep current (µA) 9 Control mode PH/EN, PWM Control interface Hardware (GPIO) Features Current Regulation, Current sense Amplifier, Smart Gate Drive Topology External FET Rating Catalog Operating temperature range (°C) -40 to 125
VQFN (RGE) 24 16 mm² (4 mm × 4 mm)
  • Single H-Bridge Gate Driver
    • Drives Four External N-Channel MOSFETs
    • Supports 100% PWM Duty Cycle
  • 5.9-V to 45-V Operating Supply Voltage Range
  • Two Control Interface Options
    • PH/EN (DRV8701E)
    • PWM (DRV8701P)
  • Adjustable Gate Drive (5 Levels)
    • 6-mA to 150-mA Source Current
    • 12.5-mA to 300-mA Sink Current
  • Supports 1.8-V, 3.3-V, and 5-V Logic Inputs
  • Current Shunt Amplifier (20 V/V)
  • Integrated PWM Current Regulation
    • Limits Motor Inrush Current
  • Low-Power Sleep Mode (9 µA)
  • Two LDO Voltage Regulators to Power External
    Components
    • AVDD: 4.8 V, up to 30-mA Output Load
    • DVDD: 3.3 V, up to 30-mA Output Load
  • Small Package and Footprint
    • 24-Pin VQFN (PowerPAD™)
    • 4.0 × 4.0 × 0.9 mm
  • Protection Features:
    • VM Undervoltage Lockout (UVLO)
    • Charge Pump Undervoltage (CPUV)
    • Overcurrent Protection (OCP)
    • Pre-Driver Fault (PDF)
    • Thermal Shutdown (TSD)
    • Fault Condition Output (nFAULT)
  • Single H-Bridge Gate Driver
    • Drives Four External N-Channel MOSFETs
    • Supports 100% PWM Duty Cycle
  • 5.9-V to 45-V Operating Supply Voltage Range
  • Two Control Interface Options
    • PH/EN (DRV8701E)
    • PWM (DRV8701P)
  • Adjustable Gate Drive (5 Levels)
    • 6-mA to 150-mA Source Current
    • 12.5-mA to 300-mA Sink Current
  • Supports 1.8-V, 3.3-V, and 5-V Logic Inputs
  • Current Shunt Amplifier (20 V/V)
  • Integrated PWM Current Regulation
    • Limits Motor Inrush Current
  • Low-Power Sleep Mode (9 µA)
  • Two LDO Voltage Regulators to Power External
    Components
    • AVDD: 4.8 V, up to 30-mA Output Load
    • DVDD: 3.3 V, up to 30-mA Output Load
  • Small Package and Footprint
    • 24-Pin VQFN (PowerPAD™)
    • 4.0 × 4.0 × 0.9 mm
  • Protection Features:
    • VM Undervoltage Lockout (UVLO)
    • Charge Pump Undervoltage (CPUV)
    • Overcurrent Protection (OCP)
    • Pre-Driver Fault (PDF)
    • Thermal Shutdown (TSD)
    • Fault Condition Output (nFAULT)

The DRV8701 is a single H-bridge gate driver that uses four external N-channel MOSFETs targeted to drive a 12-V to 24-V bidirectional brushed DC motor.

A PH/EN (DRV8701E) or PWM (DRV8701P) interface allows simple interfacing to controller circuits. An internal sense amplifier allows for adjustable current control. The gate driver includes circuitry to regulate the winding current using fixed off-time PWM current chopping.

DRV8701 drives both high- and low-side FETs with 9.5-V VGS gate drive. The gate drive current for all external FETs is configurable with a single external resistor on the IDRIVE pin.

A low-power sleep mode is provided which shuts down internal circuitry to achieve very-low quiescent current draw. This sleep mode can be set by taking the nSLEEP pin low.

Internal protection functions are provided: undervoltage lockout, charge pump faults, overcurrent shutdown, short-circuit protection, predriver faults, and overtemperature. Fault conditions are indicated on the nFAULT pin.

The DRV8701 is a single H-bridge gate driver that uses four external N-channel MOSFETs targeted to drive a 12-V to 24-V bidirectional brushed DC motor.

A PH/EN (DRV8701E) or PWM (DRV8701P) interface allows simple interfacing to controller circuits. An internal sense amplifier allows for adjustable current control. The gate driver includes circuitry to regulate the winding current using fixed off-time PWM current chopping.

DRV8701 drives both high- and low-side FETs with 9.5-V VGS gate drive. The gate drive current for all external FETs is configurable with a single external resistor on the IDRIVE pin.

A low-power sleep mode is provided which shuts down internal circuitry to achieve very-low quiescent current draw. This sleep mode can be set by taking the nSLEEP pin low.

Internal protection functions are provided: undervoltage lockout, charge pump faults, overcurrent shutdown, short-circuit protection, predriver faults, and overtemperature. Fault conditions are indicated on the nFAULT pin.

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技術文件

設計與開發

如需其他條款或必要資源,請按一下下方的任何標題以檢視詳細頁面 (如有)。

開發板

DRV8701EVM — DRV8701 全橋有刷 DC 馬達閘極驅動器評估模組

DRV8701EVM(評估模組)做為評估套件,用於展示 TI 的 DRV8701 H 橋閘極驅動器。使用 MSP430G2553 控制馬達的速度與方向,同時監控來自 DRV8701 的馬達電流。功率級使用 DRV8701 H 橋閘極驅動器與 CSD18532Q5B N 通道 NexFETTM 功率 MOSFET 建立。該 EVM 採用高性能、電源效率且符合成本效益的平台,可加快開發速度並縮短上市時間。本 EVM 搭配操作簡便的應用程式,只需極少的外部設備即可快速啟動。

使用指南: PDF
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模擬型號

DRV8701 TINA-TI Transient Reference Design

SLVMB82.TSC (673 KB) - TINA-TI 參考設計
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模擬型號

DRV8701 TINA-TI Transient Spice Model

SLVMB81.ZIP (101 KB) - TINA-TI Spice 模型
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模擬型號

DRV8701E Transient Simulation Model (Rev. A)

SLVMAR3A.ZIP (90 KB) - PSpice 模型
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參考設計

TIDA-00620 — 12 至 24V、27A 有刷 DC 馬達參考設計

由於價格低廉且控制方案簡單,有刷馬達是馬達設計中相對流行的選擇。  有刷馬達具有繞線轉子和永磁定子。  馬達的換向是透過導電環實現的,導電環透過電刷與轉子連接,電刷刮擦換向器環。  這樣一來,透過電刷和不同換向環的方向,就可以改變流經馬達的電流方向。  利用 H 橋可以快速有效地對有刷 DC 馬達進行方向和速度控制的改變。  有刷 DC 馬達需要電子驅動器來控制馬達電流。  電子驅動電路包括:一個滿足所需功率能力的兩相位逆變器功率級;一個用於實現馬達速度命令和故障處理的微控制器;用於馬達啟動/堵轉保護的電流檢測功能;用於控制兩相位逆變器的閘極驅動器;以及用於微控制器和其他低壓設備的電源供應器。

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參考設計

TIDA-00875 — 採用有刷馬達驅動器的單相無刷 DC (BLDC) 參考設計

TIDA-00875 示範如何重新配置​​現有的有刷馬達驅動器來控制單相位無刷 (BLDC) 馬達。DRV8801 和 DRV8701 用於控制單相位 BLDC 馬達。DRV8801 設計可以 100% 占空比控制該馬達。裝置通電後,馬達開始運轉。DRV8701 設計採用 PWM 輸入來控制馬達,從而實現速度控制。此設計可在 12V 至最高 24V 之間運作,全刻度電流為 2.8A 峰值電流 (DRV8801) 或 20A 峰值電流 (DRV8701)。

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封裝 針腳 CAD 符號、佔位空間與 3D 模型
VQFN (RGE) 24 Ultra Librarian

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