JAJSRI9A October 2023 – March 2024 LM51772
ADVANCE INFORMATION
PARAMETER | MIN | TYP | MAX | UNIT | ||||
---|---|---|---|---|---|---|---|---|
SUPPLY CURRENT | ||||||||
Shutdown current into VIN | V(VIN) = 48V, V(BIAS) = 0V V(EN) = 0V | TJ = 25°C | 3.6 | µA | ||||
Shutdown current into BIAS | V(VIN) = 0V, V(EN) = 0V | TJ = 25°C | 2.8 | µA | ||||
Quiescent current into BIAS | V(EN) = 3.3V, V(FB) > 1V, uSleep enabled, ILIMCOMP = V(VCC2) , EN_VCC1 = 0b0 | TJ = 25°C | 25 | µA | ||||
VCC1 REGULATOR | ||||||||
VCC1 regulation | VI = 12.0V ,I(VCC1) = 1mA | 5 | V | |||||
VCC1 drop-out voltage | I(VCC1) = 34mA; | VI = 5V | 0.6 | V | ||||
VI = 4.5V | 0.6 | V | ||||||
VCC1 sourcing current limit | VCC1=GND | VI = 12V | 34 | mA | ||||
VCC2 REGULATOR | ||||||||
VCC2 regulation | VBIAS 12.0V ,I(VCC2) = 20mA | 5 | V | |||||
VCC2 drop-out voltage | I(VCC2) = 45mA | VI = 4V | 130 | mV | ||||
VI = 3.5V | 190 | mV | ||||||
VCC2 sourcing current limit | V(VCC2) ≥ 3V | VI = 6V, VBIAS = 12V | 260 | mA | ||||
VT+(VCC2) | Positive going treshold | V(VCC2) rising | 3.35 | V | ||||
VT-(VCC2) | Negative going treshold | V(VCC2) falling | 3.05 | V | ||||
VT+(Force,BIAS) | Positive going treshold for Forced V(BIAS) | FORCE_BIASPIN = 0b1 | 4.4 | V | ||||
VT+(VCC2,SUP) | Positive going treshold for LDO switch-over | 6.5 | V | |||||
VCC2 UVLO rising detection delay time | V(VCC2) rising | 100 | µs | |||||
nRST | ||||||||
VT+(nRST) | Enable positive-going threshold | nRSTrising | 1.4 | V | ||||
VT-(nRST) | Enable negative-going threshold | nRST falling | 0.35 | V | ||||
EN/UVLO | ||||||||
VT+(UVLO) | UVLO positive-going threshold | V(EN/UVLO) rising | 1.25 | V | ||||
VT-(UVLO) | UVLO negative-going threshold | V(EN/UVLO) falling | 1.2 | V | ||||
Vhyst(UVLO) | UVLO threshold hysteresis | V(EN/UVLO) falling | 50 | mV | ||||
IUVLO | UVLO hystereses sinking current | V(EN/UVLO) < 1.26V | 5 | µA | ||||
td(UVLO) | UVLO detection delay time | V(EN/UVLO) falling; | 30 | µs | ||||
SYNC | ||||||||
VT+(SYNC) | Sync input positive going threshold | 1.19 | V | |||||
VT-(SYNC) | Sync input negative going threshold | 0.41 | V | |||||
Sync activity detection frequency | 99 | kHz | ||||||
td(Det,Sync) | Sync activity detection frequency threshold | refered to f(SYNC) | 3 | cycles | ||||
SYNC output drive streght | EN_SYNC_OUT = 0b1 V(VCC2) = 5V |
sink | –38 | mA | ||||
source | 52 | mA | ||||||
SOFT-START | ||||||||
I(SS) | Soft-start current | 10 | uA | |||||
SS pull-down switch RDS(on) |
V(SS) = 1V | 21 | Ω | |||||
td(DISCH;SS) | SS Pin discharge time | Time from internal SS dischrage until the soft-start current can charge the pin again | 500 | µs | ||||
td(EN_SS) | SS Pin charg delay time | Internal delay until soft-start current starts | 4 | µs | ||||
V(SS,clamp) | Clamp Voltage for SS pin | 4.1 | V | |||||
VOUT TRACKING | ||||||||
VT+(DTRK) | DTRK positive-going threshold | V(DTRK) rising | 1.19 | V | ||||
VT-(DTRK) | DTRK negative-going threshold | V(DTRK) falling | 0.41 | V | ||||
DTRK activity dectection frequency | DTRK activity detection frequency | 148 | kHz | |||||
td(DTRK) | DTRK detection delay time | 3 | cycles | |||||
fc(LPF) | Corner freqeuncy of internal low pass | 40 | kHz | |||||
V(REF)voltage offset error | V(REF)voltage offset error | f(DTRK) = 500kHz, duty = 50% | ±10 | mV | ||||
PULSE WIDTH MODULATION | ||||||||
Switching frequency | RRT = 14kΩ, trimmed OSC | 2200 | kHz | |||||
Switching frequency | RRT = 15.4kΩ, trimmed OSC | 2000 | kHz | |||||
Switching frequency | RRT = 316kΩ, trimmed OSC | 100 | kHz | |||||
Minimum controllable on-time | fPWM, RRT = 14kΩ, positive inductor current | Boost Mode | 59 | ns | ||||
Buck Mode | 105 | ns | ||||||
Minimum controllable off-time | Boost Mode | 108 | ns | |||||
Buck Mode | 108 | ns | ||||||
RT regulation voltage | 0.75 | V | ||||||
MODE SELECTION | ||||||||
VT+(MODE) | Mode input positive going threshold | 1.19 | V | |||||
VT-(MODE) | Mode input negative going threshold | 0.41 | V | |||||
CURRENT SENSE | ||||||||
Positive peak current limit threshold | 50 | mV | ||||||
Negative peak current limit threshold | –50 | mV | ||||||
OUTPUT CURRENT LIMIT | ||||||||
Current sense amplifier transconductance | I2C interface disabled or DISABLE_ILIM_DAC = 0b1; V(ISNSP) > 3.3V; EN_NEG_CL_LIMIT = 0 | 25 mV ≤ ΔV(ISNS) ≤ 50mV | 1 | mS | ||||
Current sense amplifier output current | I2C interface disabled or DISABLE_ILIM_DAC = 0b1; V(ISNSP) > 3.V; EN_NEG_CL_LIMIT = 0 | 5 mV | 5 | µA | ||||
25 mV | 25 | µA | ||||||
50 mV | 50 | µA | ||||||
Offset voltage | VISNS > 4.8V | TJ= 25℃ | 0 | mV | ||||
VISNS > 4.8V | TJ=-40°C to 150°C | 0 | mV | |||||
Current sense amplifier transconductance | I2C interface enabled and DISABLE_ILIM_DAC = 0b0 VISNS > 4.8V; N_NEG_CL_LIMIT = 0 |
ΔV(ISNS) = 30mV and 50mV | 500 | µS | ||||
Current limit | R(ISNS) = 10mΩ±1%; ILIM_THRESHOLD = 0x64 | 5 | A | |||||
ΔV(ISNSx) | Current limit threshold voltage | ILIM_THRESHOLD = 0x14 | EN_NEG_CL_LIMIT = 0J=-40°C to 105°C; ISNSP/N ≥ 5V; | 10 | mV | |||
Current limit threshold voltage | ILIM_THRESHOLD = 0x3C | 30 | mV | |||||
Current limit threshold voltage | ILIM_THRESHOLD = 0x64 | 50 | mV | |||||
Current limit threshold voltage step size | from 5mV to 68.5mV | 0.5 | mV | |||||
Postive going threshold to disable ILIM | Referred to VCC2 | 64 | % | |||||
ISET regulation threshold voltage | 1 | V | ||||||
ERROR AMPLIFIER | ||||||||
VREF | FB reference Voltage | FB reference | 1 | V | ||||
FB pin leakage current | V(FB) = 1V | 60 | nA | |||||
Transconductance | 600 | µS | ||||||
COMP sourcing current | 150 | uA | ||||||
COMP sinking current | 150 | uA | ||||||
COMP clamp voltage | V(FB) = 990mV | 1.25 | V | |||||
COMP clamp voltage | V(FB) = 1.01V | 0.240 | V | |||||
VT+(SEL,iFB) | postive going threshold to select internal FB operation | V(FB) rising | 2.5 | V | ||||
OVP | ||||||||
VT+(OVP) | Over-voltage rising threshold | FB rising referece to VREF | 110 | % | ||||
VT-(OVP) | Over-voltage falling threshold | FB falling referece to VREF | 105 | % | ||||
VT+(OVP2) | Over-voltage rising threshold | V(VOUT) rising | V_OVP2 = 0b111111 | 55 | V | |||
Over-voltage de-glitch time | 10 | µs | ||||||
nFLT | ||||||||
nFLT pull-down switch RDSON | 1mA sinking | 85 | Ω | |||||
Under-voltage positive going threshold | FB rising (referece to VREF) | 95 | % | |||||
Under-voltage negative going threshold | FB falling (referece to VREF) | 90 | % | |||||
nFLT off-state leakage | V(nFLT)=12V | 100 | nA | |||||
Deglitch filter | 20 | us | ||||||
MOSFET DRIVER | ||||||||
tr | Rise time | HG1, HG2, LG1, LG2 | CG = 3.3nF | 20 | ns | |||
tf | Fall time | HG1, HG2, LG1, LG2 | CG = 3.3nF | 15 | ns | |||
Gater driver high side on-resistance | LO1, LO2 | I(test) = 500mA | 1.12 | Ω | ||||
Gater driver high side on-resistance | HO1, HO2 | I(test) = 500mA | 1.16 | Ω | ||||
Gater driver low side on-resistance | LO1, LO2 | I(test) = 500mA | 0.5 | Ω | ||||
Gater driver low side on-resistance | HO1, HO2 | I(test) = 500mA | 0.51 | Ω | ||||
THERMAL SHUTDOWN | ||||||||
TT+J | Thermal shutdown threshold | Thermal shutdown threshold | TJ rising | 164 | °C | |||
Thermal shutdown hysteresis | Thermal shutdown hysteresis | 15 | °C | |||||
THERMAL WARNING | ||||||||
Thermal warning threshold | TJ rising | THW_THRESHOLD=0b10 | 110 | °C | ||||
Thermal warning typ. programming range | 95 | 140 | °C | |||||
R2D INTERFACE | ||||||||
Internal reference resistor | 31.77 | 33 | 34.23 | kΩ | ||||
RCFG | External selection resistor resistance | R2D setting #0 | 0 | 0.1 | kΩ | |||
R2D setting #1 | 0.49567 | 0.511 | 0.52633 | kΩ | ||||
R2D setting #2 | 1.1155 | 1.15 | 1.1845 | kΩ | ||||
R2D setting #3 | 1.8139 | 1.87 | 1.9261 | kΩ | ||||
R2D setting #4 | 2.6578 | 2.74 | 2.8222 | kΩ | ||||
R2D setting #5 | 3.7151 | 3.83 | 3.9449 | kΩ | ||||
R2D setting #6 | 4.9567 | 5.11 | 5.2633 | kΩ | ||||
R2D setting #7 | 6.2953 | 6.49 | 6.6847 | kΩ | ||||
R2D setting #8 | 8.0025 | 8.25 | 8.4975 | kΩ | ||||
R2D setting #9 | 10.185 | 10.5 | 10.815 | kΩ | ||||
R2D setting #10 | 12.901 | 13.3 | 13.699 | kΩ | ||||
R2D setting #11 | 15.714 | 16.2 | 16.686 | kΩ | ||||
R2D setting #12 | 19.885 | 20.5 | 21.115 | kΩ | ||||
R2D setting #13 | 24.153 | 24.9 | 25.647 | kΩ | ||||
R2D setting #14 | 29.197 | 30.1 | 31.003 | kΩ | ||||
R2D setting #15 | 35.405 | 36.5 | 37.595 | kΩ | ||||
Protection/Monitoring | ||||||||
SCP Hiccup mode on time | 1 | ms | ||||||
SCP Hiccup mode off time | 24 | ms | ||||||
CABLE DROP COMPENSATION | ||||||||
VOUT increase for cable droop compensation with external feedback | R(FB,top) = 100kΩ; CDC_GAIN=0b01 | V(CDC) = 0.2V | 0.1 | V | ||||
V(CDC) = 1V | 0.5 | V | ||||||
VOUT increase for cable droop compensation with internal feedback | CDC_GAIN=0b01 | V(CDC) = 0.2V | 0.1 | V | ||||
V(CDC) = 1V | 0.5 | V | ||||||
gm(CDC) | CDC current sense amplifier transconductance | ΔV(IMON) = 50mV and 30mV | V(ISNSP) > 3.3V; EN_NEG_CL_LIMIT = 0 | 500 | uS | |||
CDC current sense amplifier bandwith | 1 | MHz | ||||||
Output current CDC | ΔV(IMON) = 50mV; EN_NEG_CL_LIMIT = 0 |
25.0 | µA | |||||
ΔV(IMON) = 25mV; EN_NEG_CL_LIMIT = 0 |
12.5 | µA | ||||||
ΔV(IMON) = 5mV; EN_NEG_CL_LIMIT = 0 |
2.5 | µA | ||||||
ΔV(IMON) = –5mV; EN_NEG_CL_LIMIT = 0 |
–2.5 | µA | ||||||
ΔV(IMON) = –25mV; EN_NEG_CL_LIMIT = 0 |
–12.5 | µA | ||||||
ΔV(IMON) = –50 mV; EN_NEG_CL_LIMIT = 0 |
–25.0 | µA | ||||||
DRIVE PIN | ||||||||
Pull down resistance | SEL_DRV_SUP = 0b00 | 1400 | Ω | |||||
Pull up resistance | SEL_DRV_SUP = 0b01 or SEL_DRV_SUP = 0b10, | 1500 | Ω | |||||
Maximum output current | SEL_DRV_SUP = 0b00 | sink | 9 | mA | ||||
Maximum output current | SEL_DRV_SUP = 0b01 or SEL_DRV_SUP = 0b10, | source | 9 | mA | ||||
Pull down resistance | SEL_DRV_SUP = 0b11 | 900 | Ω | |||||
Pull up resistance | 1200 | Ω |
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Maximum output current | sink | 9 | mA | |||||
Maximum output current | source | 8 | mA | |||||
Charge pump switching frequency | 100 | kHz | ||||||
OUTPUT DISCHARGE | ||||||||
Output discharge current | VO_DISCH = 0b00 | 25 | mA | |||||
VO_DISCH = 0b01 | 50 | mA | ||||||
VO_DISCH = 0b10 | 75 | mA | ||||||
Discharge done threshold | 0.5 | V | ||||||
SPREAD SPECTRUM | ||||||||
Switching frequency modulation range upper limit | 7.8 | % | ||||||
Switching frequency modulation range lower limit | –7.8 | % |