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DRV8353M

ACTIVE

102-V max 3-phase smart gate driver with current shunt amplifiers and extended temperature

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Data sheet

DRV8353M

ACTIVE
Data sheet Order now

Product details

Rating Catalog Architecture Gate driver Control interface 1xPWM, 3xPWM, 6xPWM Gate drive (A) 1 Vs (min) (V) 9 Vs ABS (max) (V) 102 Features Current sense Amplifier, Hardware Management I/F, SPI/I2C, Smart Gate Drive Operating temperature range (°C) -55 to 125
Rating Catalog Architecture Gate driver Control interface 1xPWM, 3xPWM, 6xPWM Gate drive (A) 1 Vs (min) (V) 9 Vs ABS (max) (V) 102 Features Current sense Amplifier, Hardware Management I/F, SPI/I2C, Smart Gate Drive Operating temperature range (°C) -55 to 125
WQFN (RTA) 40 36 mm² 6 x 6
  • 9 to 100-V, Triple half-bridge gate driver

    • Extended TA operation -55 °C to 125 °C

    • Optional triple low-side current shunt amplifiers
  • Smart gate drive architecture
    • Adjustable slew rate control for EMI performance
    • VGS handshake and minimum dead-time insertion to prevent shoot-through
    • 50-mA to 1-A peak source current
    • 100-mA to 2-A peak sink current
    • dV/dt mitigation through strong pulldown
  • Integrated gate driver power supplies
    • High-side doubler charge pump For 100% PWM duty cycle control
    • Low-side linear regulator
  • Integrated triple current shunt amplifiers
    • Adjustable gain (5, 10, 20, 40 V/V)
    • Bidirectional or unidirectional support
  • 6x, 3x, 1x, and independent PWM modes
    • Supports 120° sensored operation
  • SPI or hardware interface available
  • Low-power sleep mode (20 µA at VVM = 48-V)
  • Integrated protection features
    • VM undervoltage lockout (UVLO)
    • Gate drive supply undervoltage (GDUV)
    • MOSFET VDS overcurrent protection (OCP)
    • MOSFET shoot-through prevention
    • Gate driver fault (GDF)
    • Thermal warning and shutdown (OTW/OTSD)
    • Fault condition indicator (nFAULT)
  • 9 to 100-V, Triple half-bridge gate driver

    • Extended TA operation -55 °C to 125 °C

    • Optional triple low-side current shunt amplifiers
  • Smart gate drive architecture
    • Adjustable slew rate control for EMI performance
    • VGS handshake and minimum dead-time insertion to prevent shoot-through
    • 50-mA to 1-A peak source current
    • 100-mA to 2-A peak sink current
    • dV/dt mitigation through strong pulldown
  • Integrated gate driver power supplies
    • High-side doubler charge pump For 100% PWM duty cycle control
    • Low-side linear regulator
  • Integrated triple current shunt amplifiers
    • Adjustable gain (5, 10, 20, 40 V/V)
    • Bidirectional or unidirectional support
  • 6x, 3x, 1x, and independent PWM modes
    • Supports 120° sensored operation
  • SPI or hardware interface available
  • Low-power sleep mode (20 µA at VVM = 48-V)
  • Integrated protection features
    • VM undervoltage lockout (UVLO)
    • Gate drive supply undervoltage (GDUV)
    • MOSFET VDS overcurrent protection (OCP)
    • MOSFET shoot-through prevention
    • Gate driver fault (GDF)
    • Thermal warning and shutdown (OTW/OTSD)
    • Fault condition indicator (nFAULT)

The DRV8353M family of devices are highly-integrated gate drivers for three-phase brushless DC (BLDC) motor applications. These applications include field-oriented control (FOC), sinusoidal current control, and trapezoidal current control of BLDC motors. The device variants provide optional integrated current shunt amplifiers to support different motor control schemes and a buck regulator to power the gate driver or external controller.

The DRV8353M uses smart gate drive (SGD) architecture to decrease the number of external components that are typically necessary for MOSFET slew rate control and protection circuits. The SGD architecture also optimizes dead time to prevent shoot-through conditions, provides flexibility in decreasing electromagnetic interference (EMI) by MOSFET slew rate control, and protects against gate short circuit conditions through VGS monitors. A strong gate pulldown circuit helps prevent unwanted dV/dt parasitic gate turn on events

Various PWM control modes (6x, 3x, 1x, and independent) are supported for simple interfacing to the external controller. These modes can decrease the number of outputs required of the controller for the motor driver PWM control signals. This family of devices also includes 1x PWM mode for simple sensored trapezoidal control of a BLDC motor by using an internal block commutation table.

The DRV8353M family of devices are highly-integrated gate drivers for three-phase brushless DC (BLDC) motor applications. These applications include field-oriented control (FOC), sinusoidal current control, and trapezoidal current control of BLDC motors. The device variants provide optional integrated current shunt amplifiers to support different motor control schemes and a buck regulator to power the gate driver or external controller.

The DRV8353M uses smart gate drive (SGD) architecture to decrease the number of external components that are typically necessary for MOSFET slew rate control and protection circuits. The SGD architecture also optimizes dead time to prevent shoot-through conditions, provides flexibility in decreasing electromagnetic interference (EMI) by MOSFET slew rate control, and protects against gate short circuit conditions through VGS monitors. A strong gate pulldown circuit helps prevent unwanted dV/dt parasitic gate turn on events

Various PWM control modes (6x, 3x, 1x, and independent) are supported for simple interfacing to the external controller. These modes can decrease the number of outputs required of the controller for the motor driver PWM control signals. This family of devices also includes 1x PWM mode for simple sensored trapezoidal control of a BLDC motor by using an internal block commutation table.
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Technical documentation

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* Data sheet DRV8353M 100-V Three-Phase Smart Gate Driver datasheet PDF | HTML 31 Mar 2020

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

DRV8353RH-EVM — DRV8353RH evaluation module, three-phase brushless DC smart gate driver

The DRV8353RH-EVM is a 15A, 3-phase brushless DC drive stage based on the DRV8353RH gate driver and CSD19532Q5B NexFET™ MOSFETs.

The module has individual DC bus and phase voltage sense as well as individual low-side current shunt amplifiers, making this evaluation module ideal for sensorless BLDC (...)

User guide: PDF
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Evaluation board

DRV8353RS-EVM — DRV8353RS evaluation module, three-phase brushless DC smart gate driver 

The DRV8353RS-EVM is a 15A, 3-phase brushless DC drive stage based on the DRV8353RS gate driver and CSD19532Q5B NexFET™ MOSFETs.

The module has individual DC bus and phase voltage sense as well as individual low-side current shunt amplifiers, making this evaluation module ideal for sensorless BLDC (...)

User guide: PDF
Not available on TI.com
Calculation tool

BLDC-MAX-QG-MOSFET-CALCULATOR — Calculate the maximum QG MOSFET for your motor driver

Calculate the maximum QG MOSFET that can be driven based on the PWM switching frequency, algorithm type, and additional external capacitance.
Supported products & hardware

Supported products & hardware

Products
BLDC drivers
DRV8320 — 65-V max 3-phase smart gate driver DRV8320R — 65-V max 3-phase smart gate driver with buck regulator DRV8323 — 65-V max 3-phase smart gate driver with current shunt amplifiers DRV8323R — 65-V max 3-phase smart gate driver with buck regulator & current shunt amplifiers DRV8329 — 60-V 1000/2000 mA 3-phase gate driver with single current sense amplifier DRV8334 — 60-V 1000-mA to 2000-mA 3-phase gate driver with accurate current sensing DRV8340-Q1 — Automotive 12-V to 24-V battery 3-phase smart gate driver DRV8343-Q1 — Automotive 12-V to 24-V battery 3-phase smart gate driver with current shunt amplifiers DRV8350 — 102-V max 3-phase smart gate driver DRV8350F — 102-V max 3-phase Functional Safety Quality-Managed smart gate driver DRV8350R — 102-V max 3-phase smart gate driver with buck regulator DRV8353 — 102-V max 3-phase smart gate driver with current shunt amplifiers DRV8353F — 102-V max 3-phase Functional Safety Quality-Managed smart gate driver with 3x CSA DRV8353M — 102-V max 3-phase smart gate driver with current shunt amplifiers and extended temperature DRV8353R — 102-V max 3-phase smart gate driver with buck regulator & current shunt amplifiers
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WQFN (RTA) 40 View options
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