LMG3526R050
- 650-V GaN-on-Si FET with integrated gate driver
- Integrated high precision gate bias voltage
- 200-V/ns FET hold-off
- 3.6-MHz switching frequency
- 15-V/ns to 150-V/ns slew rate for optimization of switching performance and EMI mitigation
- Operates from 7.5-V to 18-V supply
- Robust protection
- Cycle-by-cycle overcurrent and latched short-circuit protection with < 100-ns response
- Withstands 720-V surge while hard-switching
- Self-protection from internal overtemperature and UVLO monitoring
- Advanced power management
- Digital temperature PWM output
- Top-side cooled 12-mm × 12-mm VQFN package separates electrical and thermal paths for lowest power loop inductance
- Zero-voltage detection feature that facilitates soft-switching converters
The LMG3526R050 GaN FET with integrated driver and protections is targeting switch-mode power converters and enables designers to achieve new levels of power density and efficiency.
The LMG3526R050 integrates a silicon driver that enables switching speed up to 150 V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TIs low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 15 V/ns to 150 V/ns, which can be used to actively control EMI and optimize switching performance.
Advanced features include digital temperature reporting, fault detection, and zero-voltage detection (ZVD). The temperature of the GaN FET is reported through a variable duty cycle PWM output. Faults reported include overtemperature, overcurrent, and UVLO monitoring. ZVD feature can provide a pulse output from ZVD pin when zero-voltage switching (ZVS) is realized.
기술 문서
유형 | 직함 | 날짜 | ||
---|---|---|---|---|
* | Data sheet | LMG3526R050 650-V 50-mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting datasheet | PDF | HTML | 2023/09/12 |
설계 및 개발
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LMG3522EVM-042는 하프 브리지에서 LMG3522R030 GaN FET 2개를 구성하며, 사이클별 과전류 보호 기능, 래치형 단락 보호 기능 및 모든 필요 보조 주변 회로를 갖고 있습니다. 이 EVM은 대규모 시스템과 함께 작동하도록 설계되어 있습니다.
패키지 | 핀 | 다운로드 |
---|---|---|
VQFN (RQS) | 52 | 옵션 보기 |
주문 및 품질
- RoHS
- REACH
- 디바이스 마킹
- 납 마감/볼 재질
- MSL 등급/피크 리플로우
- MTBF/FIT 예측
- 물질 성분
- 인증 요약
- 지속적인 신뢰성 모니터링
- 팹 위치
- 조립 위치