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LM74610-Q1

ACTIVE

0.48-V to 42-V, zero IQ automotive ideal diode controller

Product details

Vin (min) (V) 0.48 Vin (max) (V) 42 Number of channels 1 Features Automotive load dump compatibility, Linear control, Reverse current blocking, Reverse polarity protection Iq (typ) (mA) 0 Iq (max) (mA) 0 FET External single FET IGate source (typ) (µA) 10 IGate source (max) (µA) 9.4 IGate sink (typ) (mA) 0.01 IGate pulsed (typ) (A) 0.1 Operating temperature range (°C) -40 to 125 IReverse (typ) (µA) 110 VSense reverse (typ) (mV) 20 Design support EVM Rating Automotive Imax (A) 1.5 VGS (max) (V) 2.5 Device type Ideal diode controller Product type Ideal diode controller
Vin (min) (V) 0.48 Vin (max) (V) 42 Number of channels 1 Features Automotive load dump compatibility, Linear control, Reverse current blocking, Reverse polarity protection Iq (typ) (mA) 0 Iq (max) (mA) 0 FET External single FET IGate source (typ) (µA) 10 IGate source (max) (µA) 9.4 IGate sink (typ) (mA) 0.01 IGate pulsed (typ) (A) 0.1 Operating temperature range (°C) -40 to 125 IReverse (typ) (µA) 110 VSense reverse (typ) (mV) 20 Design support EVM Rating Automotive Imax (A) 1.5 VGS (max) (V) 2.5 Device type Ideal diode controller Product type Ideal diode controller
VSSOP (DGK) 8 14.7 mm² 3 x 4.9
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Exceeds HBM ESD Classification Level 2
    • Device CDM ESD Classification Level C4B
  • Maximum reverse voltage of 45 V
  • No Positive Voltage limitation to Anode Terminal
  • Charge Pump Gate Driver for External N-Channel
    MOSFET
  • Lower Power Dissipation than Schottky
    Diode/PFET Solutions
  • Low Reverse Leakage Current
  • Zero IQ
  • Fast 2-µs Response to Reverse Polarity
  • –40°C to +125°C Operating Ambient Temperature
  • Can be Used in OR-ing Applications
  • Meets CISPR25 EMI Specification
  • Meets Automotive ISO7637 Transient
    Requirements with a Suitable TVS Diode
  • No Peak Current Limit
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Exceeds HBM ESD Classification Level 2
    • Device CDM ESD Classification Level C4B
  • Maximum reverse voltage of 45 V
  • No Positive Voltage limitation to Anode Terminal
  • Charge Pump Gate Driver for External N-Channel
    MOSFET
  • Lower Power Dissipation than Schottky
    Diode/PFET Solutions
  • Low Reverse Leakage Current
  • Zero IQ
  • Fast 2-µs Response to Reverse Polarity
  • –40°C to +125°C Operating Ambient Temperature
  • Can be Used in OR-ing Applications
  • Meets CISPR25 EMI Specification
  • Meets Automotive ISO7637 Transient
    Requirements with a Suitable TVS Diode
  • No Peak Current Limit

The LM74610-Q1 is a controller device that can be used with an N-Channel MOSFET in a reverse polarity protection circuitry. It is designed to drive an external MOSFET to emulate an ideal diode rectifier when connected in series with a power source. A unique advantage of this scheme is that it is not referenced to ground and thus has Zero Iq.

The LM74610-Q1 controller provides a gate drive for an external N-Channel MOSFET and a fast response internal comparator to discharge the MOSFET Gate in the event of reverse polarity. This fast pull-down feature limits the amount and duration of reverse current flow if opposite polarity is sensed. The device design also meets CISPR25 Class 5 EMI specifications and automotive ISO7637 transient requirements with a suitable TVS diode.

The LM74610-Q1 is a controller device that can be used with an N-Channel MOSFET in a reverse polarity protection circuitry. It is designed to drive an external MOSFET to emulate an ideal diode rectifier when connected in series with a power source. A unique advantage of this scheme is that it is not referenced to ground and thus has Zero Iq.

The LM74610-Q1 controller provides a gate drive for an external N-Channel MOSFET and a fast response internal comparator to discharge the MOSFET Gate in the event of reverse polarity. This fast pull-down feature limits the amount and duration of reverse current flow if opposite polarity is sensed. The device design also meets CISPR25 Class 5 EMI specifications and automotive ISO7637 transient requirements with a suitable TVS diode.

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Technical documentation

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Type Title Date
* Data sheet LM74610-Q1 Zero IQ Reverse Polarity Protection Smart Diode Controller datasheet (Rev. B) PDF | HTML 07 Jun 2016
Application note Basics of Ideal Diodes (Rev. B) PDF | HTML 05 Oct 2021
Test report Automotive Wide-VIN to Point-of-Load Power Supply Reference Design (Rev. A) 26 Mar 2020
E-book 11 Ways to Protect Your Power Path 03 Jul 2019
Technical article Build a sub-20W CISPR25 Class 5 power design for automotive infotainment processor PDF | HTML 02 May 2017
Application note Active OR-ing Solution with LM74610 Smart Diode Controller (Rev. B) 01 Mar 2017
Analog Design Journal Designing the front-end DC/DC conversion stage to withstand automotive transient 18 Jan 2017
Technical article Reverse-polarity protection comparison: diode vs. PFET vs. a smart diode solution PDF | HTML 21 Dec 2015
EVM User's guide LM74610-DQEVM User’s Guide 12 Oct 2015
EVM User's guide LM74610-SQ EVM User’s Guide 10 Oct 2015

Design & development

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Evaluation board

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Simulation model

LM74610-Q1 TINA-TI Transient Reference Design

SNOM610.TSC (778 KB) - TINA-TI Reference Design
Simulation model

LM74610-Q1 TINA-TI Transient Spice Model

SNOM609.ZIP (28 KB) - TINA-TI Spice Model
Simulation model

LM74610-Q1 Unencrypted PSpice Transient Model Package (Rev. C)

SNOM560C.ZIP (55 KB) - PSpice Model
Simulation tool

PSPICE-FOR-TI — PSpice® for TI design and simulation tool

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)

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