SLUSFQ0C November   2024  – September 2025 BQ27Z758

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configurations and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
      1. 5.5.1 Supply Current
      2. 5.5.2 Common Analog (LDO, LFO, HFO, REF1, REF2, I-WAKE)
      3. 5.5.3 Battery Protection (CHG, DSG)
      4. 5.5.4 Cell Sensing Output (BAT_SP, BAT_SN)
      5. 5.5.5 Gauge Measurements (ADC, CC, Temperature)
      6. 5.5.6 Flash Memory
    6. 5.6 Digital I/O: DC Characteristics
    7. 5.7 Digital I/O: Timing Characteristics
    8. 5.8 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1  BQ27Z758 Processor
      2. 6.3.2  Battery Parameter Measurements
        1. 6.3.2.1 Coulomb Counter (CC) and Digital Filter
        2. 6.3.2.2 ADC Multiplexer
        3. 6.3.2.3 Analog-to-Digital Converter (ADC)
        4. 6.3.2.4 Internal Temperature Sensor
        5. 6.3.2.5 External Temperature Sensor Support
      3. 6.3.3  Power Supply Control
      4. 6.3.4  ENAB Pin
      5. 6.3.5  Bus Communication Interface
      6. 6.3.6  Low Frequency Oscillator
      7. 6.3.7  High Frequency Oscillator
      8. 6.3.8  1.8V Low Dropout Regulator
      9. 6.3.9  Internal Voltage References
      10. 6.3.10 Overcurrent in Discharge Protection
      11. 6.3.11 Overcurrent in Charge Protection
      12. 6.3.12 Short-Circuit Current in Discharge Protection
      13. 6.3.13 Primary Protection Features
      14. 6.3.14 Battery Sensing
      15. 6.3.15 Gas Gauging
      16. 6.3.16 Zero Volt Charging (ZVCHG)
      17. 6.3.17 Charge Control Features
      18. 6.3.18 Authentication
    4. 6.4 Device Functional Modes
      1. 6.4.1 Lifetime Logging Features
      2. 6.4.2 Configuration
        1. 6.4.2.1 Coulomb Counting
        2. 6.4.2.2 Cell Voltage Measurements
        3. 6.4.2.3 Auto Calibration
        4. 6.4.2.4 Temperature Measurements
  8. 7 Applications and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Applications
      1. 7.2.1 Design Requirements (Default)
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 Changing Design Parameters
      3. 7.2.3 Calibration Process
      4. 7.2.4 Gauging Data Updates
        1. 7.2.4.1 Application Curve
      5. 7.2.5 ESD Mitigation
    3. 7.3 Power Supply Requirements
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Third-Party Products Disclaimer
    2. 8.2 Documentation Support
      1. 8.2.1 Related Documentation
    3. 8.3 Receiving Notification of Documentation Updates
    4. 8.4 Support Resources
    5. 8.5 Trademarks
    6. 8.6 Electrostatic Discharge Caution
    7. 8.7 Glossary
  10. 9 Revision History
  11. 10Mechanical, Orderable, and Packaging Information
    1.     PACKAGE OPTION ADDENDUM
    2. 10.1 Tape and Reel Information
    3. 10.2 Mechanical Data

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • YAH|15
Thermal pad, mechanical data (Package|Pins)

5.5.5 Gauge Measurements (ADC, CC, Temperature)

Unless otherwise noted, characteristics noted under conditions of TA = –40 to 85℃
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ANALOG DIGITAL CONVERTER (ADC)
VBAT_RES Battery Voltage ADC Resolution (bits) Signed data format, ±15 bits 16 bits
VBAT_FS Battery Measurement Full Scale Range –0.2 5.5 V
VBAT_ERR Battery Voltage ADC Error TA = +25℃, VBAT = 4.0VDC ±1 mV
VBAT = 2.5 to 5.0VDC ±2
RBAT Effective input resistance 8 MΩ
tBAT Battery Voltage Conversion Time 11.7 ms
VADC_RES Effective Resolution VBAT 14 15 bits
Coulomb Counter (CC)
VCC_CM Common mode voltage range VSS = 0V, 2V ≤ VBAT ≤ 5V VSS VBAT V
VCC_IN Input voltage range VCC_CM–0.1 VCC_CM+0.1 V
ICC_IN Effective input current sense range (1)(2) Ideal RSNS = 1mΩ (16-bit data limited) ±32,768 mA
Ideal RSNS = 2mΩ (16-bit data limited)
Ideal RSNS = 5mΩ ±20,000
tCC_CONV Conversion time Single conversion 1000 ms
CCADC_RES Effective Resolution 16 bits
1LSB = VREF1/10/(±215) ±3.7 µV
ICC_ERR Effective current measurement error Ideal RSNS = 1.0mΩ, 10.0A, TA = 25 ℃ 26 mA
Ideal RSNS = 1.0mΩ, –10.0A, TA = 25 ℃ 29
CCOSE Offset error 16- bit Post-Calibration -2.6 1.3 +2.6 LSB
CCOSE_DRIFT Offset error drift 15-bit + sign, Post Calibration 0.04 0.07 LSB/°C
CCGE Gain Error 15-bit + sign, Over input voltage range -492 131 +492 LSB
RCC_IN Effective input resistance 7 MΩ
NTC THERMISTOR MEASUREMENT
RNTC(PU) Internal Pullup Resistance Factory Trimmed, firmware compensated 14.4 18 21.6 kΩ
RNTC(DRIFT) Resistance drift over temperature Firmware compensated –250 –120 0 PPM/°C
RNTC_ERR External NTC Thermistor
Temperature Measurement
Error with Linearization		 Ideal 10KΩ 103AT NTC, TA = –10 to 70℃ –2 ±1 +2 ℃
Ideal 10KΩ 103AT NTC, TA = –40 to 85℃ –3 ±2 +3
INTERNAL TEMPERATURE SENSOR
V(TEMP) Internal Temperature sensor voltage drift VTEMPP 1.65 1.73 1.8 mV/°C
V(TEMP) Internal Temperature sensor voltage drift VTEMPP – VTEMPN (specified by design) 0.17 0.18 0.19 mV/°C
(1) Firmware-based parameter.  Not production tested.
(2) Limited by 16-bit twos-complement numeric format