SPRS975H August   2016  – February 2020 DRA780 , DRA781 , DRA782 , DRA783 , DRA784 , DRA785 , DRA786 , DRA787 , DRA788

PRODUCTION DATA.  

  1. 1Device Overview
    1. 1.1 Features
    2. 1.2 Applications
    3. 1.3 Description
    4. 1.4 Functional Block Diagram
  2. 2Revision History
  3. 3Device Comparison
    1. 3.1 Related Products
  4. 4Terminal Configuration and Functions
    1. 4.1 Pin Diagram
    2. 4.2 Pin Attributes
    3. 4.3 Signal Descriptions
      1. 4.3.1  VIP
      2. 4.3.2  DSS
      3. 4.3.3  SD_DAC
      4. 4.3.4  ADC
      5. 4.3.5  Camera Control
      6. 4.3.6  CPI
      7. 4.3.7  CSI2
      8. 4.3.8  EMIF
      9. 4.3.9  GPMC
      10. 4.3.10 Timers
      11. 4.3.11 I2C
      12. 4.3.12 UART
      13. 4.3.13 McSPI
      14. 4.3.14 QSPI
      15. 4.3.15 McASP
      16. 4.3.16 DCAN and MCAN
      17. 4.3.17 GMAC_SW
      18. 4.3.18 SDIO Controller
      19. 4.3.19 GPIO
      20. 4.3.20 PWMSS
      21. 4.3.21 ATL
      22. 4.3.22 Test Interfaces
      23. 4.3.23 System and Miscellaneous
        1. 4.3.23.1 Sysboot
        2. 4.3.23.2 Power, Reset and Clock Management (PRCM)
        3. 4.3.23.3 Enhanced Direct Memory Access (EDMA)
        4. 4.3.23.4 Interrupt Controllers (INTC)
      24. 4.3.24 Power Supplies
    4. 4.4 Pin Multiplexing
    5. 4.5 Connections for Unused Pins
  5. 5Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Power-On Hours (POH)
    4. 5.4 Recommended Operating Conditions
    5. 5.5 Operating Performance Points
      1. 5.5.1 AVS Requirements
      2. 5.5.2 Voltage And Core Clock Specifications
      3. 5.5.3 Maximum Supported Frequency
    6. 5.6 Power Consumption Summary
    7. 5.7 Electrical Characteristics
      1. Table 5-6  LVCMOS DDR DC Electrical Characteristics
      2. Table 5-7  Dual Voltage LVCMOS I2C DC Electrical Characteristics
      3. Table 5-8  IQ1833 Buffers DC Electrical Characteristics
      4. Table 5-9  IHHV1833 Buffers DC Electrical Characteristics
      5. Table 5-10 LVCMOS Analog OSC Buffers DC Electrical Characteristics
      6. Table 5-11 Dual Voltage LVCMOS DC Electrical Characteristics
      7. Table 5-12 Analog-to-Digital ADC Subsystem Electrical Specifications
    8. 5.8 Thermal Characteristics
      1. 5.8.1 Package Thermal Characteristics
    9. 5.9 Timing Requirements and Switching Characteristics
      1. 5.9.1 Timing Parameters and Information
        1. 5.9.1.1 Parameter Information
          1. 5.9.1.1.1 1.8 V and 3.3 V Signal Transition Levels
          2. 5.9.1.1.2 1.8 V and 3.3 V Signal Transition Rates
          3. 5.9.1.1.3 Timing Parameters and Board Routing Analysis
      2. 5.9.2 Interface Clock Specifications
        1. 5.9.2.1 Interface Clock Terminology
        2. 5.9.2.2 Interface Clock Frequency
      3. 5.9.3 Power Supply Sequences
      4. 5.9.4 Clock Specifications
        1. 5.9.4.1 Input Clocks / Oscillators
          1. 5.9.4.1.1 OSC0 External Crystal
          2. 5.9.4.1.2 OSC0 Input Clock
          3. 5.9.4.1.3 Auxiliary Oscillator OSC1 Input Clock
            1. 5.9.4.1.3.1 OSC1 External Crystal
            2. 5.9.4.1.3.2 OSC1 Input Clock
          4. 5.9.4.1.4 RC On-die Oscillator Clock
        2. 5.9.4.2 Output Clocks
        3. 5.9.4.3 DPLLs, DLLs
          1. 5.9.4.3.1 DPLL Characteristics
          2. 5.9.4.3.2 DLL Characteristics
            1. 5.9.4.3.2.1 DPLL and DLL Noise Isolation
      5. 5.9.5 Recommended Clock and Control Signal Transition Behavior
      6. 5.9.6 Peripherals
        1. 5.9.6.1  Timing Test Conditions
        2. 5.9.6.2  VIP
        3. 5.9.6.3  DSS
        4. 5.9.6.4  EMIF
        5. 5.9.6.5  GPMC
          1. 5.9.6.5.1 GPMC/NOR Flash Interface Synchronous Timing
          2. 5.9.6.5.2 GPMC/NOR Flash Interface Asynchronous Timing
          3. 5.9.6.5.3 GPMC/NAND Flash Interface Asynchronous Timing
        6. 5.9.6.6  GP Timers
          1. 5.9.6.6.1 GP Timer Features
        7. 5.9.6.7  I2C
          1. Table 5-39 Timing Requirements for I2C Input Timings
          2. Table 5-40 Switching Characteristics Over Recommended Operating Conditions for I2C Output Timings
        8. 5.9.6.8  UART
          1. Table 5-41 Timing Requirements for UART
          2. Table 5-42 Switching Characteristics Over Recommended Operating Conditions for UART
        9. 5.9.6.9  McSPI
        10. 5.9.6.10 QSPI
        11. 5.9.6.11 McASP
          1. Table 5-50 Timing Requirements for McASP1
          2. Table 5-51 Timing Requirements for McASP2
          3. Table 5-52 Timing Requirements for McASP3
          4. Table 5-53 Switching Characteristics Over Recommended Operating Conditions for McASP1
          5. Table 5-54 Switching Characteristics Over Recommended Operating Conditions for McASP2
          6. Table 5-55 Switching Characteristics Over Recommended Operating Conditions for McASP3
        12. 5.9.6.12 DCAN and MCAN
          1. 5.9.6.12.1 DCAN
          2. 5.9.6.12.2 MCAN
          3. Table 5-58 Timing Requirements for CAN Receive
          4. Table 5-59 Switching Characteristics Over Recommended Operating Conditions for CAN Transmit
        13. 5.9.6.13 GMAC_SW
          1. 5.9.6.13.1 GMAC MDIO Interface Timings
          2. 5.9.6.13.2 GMAC RGMII Timings
            1. Table 5-63 Timing Requirements for rgmiin_rxc - RGMIIn Operation
            2. Table 5-64 Timing Requirements for GMAC RGMIIn Input Receive for 10/100/1000 Mbps
            3. Table 5-65 Switching Characteristics Over Recommended Operating Conditions for rgmiin_txctl - RGMIIn Operation for 10/100/1000 Mbit/s
            4. Table 5-66 Switching Characteristics for GMAC RGMIIn Output Transmit for 10/100/1000 Mbps
        14. 5.9.6.14 SDIO Controller
          1. 5.9.6.14.1 MMC, SD Default Speed
          2. 5.9.6.14.2 MMC, SD High Speed
          3. 5.9.6.14.3 MMC, SD and SDIO SDR12 Mode
          4. 5.9.6.14.4 MMC, SD SDR25 Mode
        15. 5.9.6.15 GPIO
        16. 5.9.6.16 ATL
          1. 5.9.6.16.1 ATL Electrical Data/Timing
            1. Table 5-77 Switching Characteristics Over Recommended Operating Conditions for ATL_CLKOUTx
      7. 5.9.7 Emulation and Debug Subsystem
        1. 5.9.7.1 JTAG Electrical Data/Timing
          1. Table 5-78 Timing Requirements for IEEE 1149.1 JTAG
          2. Table 5-79 Switching Characteristics Over Recommended Operating Conditions for IEEE 1149.1 JTAG
          3. Table 5-80 Timing Requirements for IEEE 1149.1 JTAG With RTCK
          4. Table 5-81 Switching Characteristics Over Recommended Operating Conditions for IEEE 1149.1 JTAG With RTCK
        2. 5.9.7.2 Trace Port Interface Unit (TPIU)
          1. 5.9.7.2.1 TPIU PLL DDR Mode
  6. 6Detailed Description
    1. 6.1 Overview
    2. 6.2 Processor Subsystems
      1. 6.2.1 DSP Subsystem
      2. 6.2.2 IPU
    3. 6.3 Accelerators and Coprocessors
      1. 6.3.1 EVE
    4. 6.4 Other Subsystems
      1. 6.4.1 Memory Subsystem
        1. 6.4.1.1 EMIF
        2. 6.4.1.2 GPMC
        3. 6.4.1.3 ELM
        4. 6.4.1.4 OCMC
      2. 6.4.2 Interprocessor Communication
        1. 6.4.2.1 Mailbox
        2. 6.4.2.2 Spinlock
      3. 6.4.3 Interrupt Controller
      4. 6.4.4 EDMA
      5. 6.4.5 Peripherals
        1. 6.4.5.1  VIP
        2. 6.4.5.2  DSS
        3. 6.4.5.3  ATL
        4. 6.4.5.4  ADC
        5. 6.4.5.5  Timers
          1. 6.4.5.5.1 General-Purpose Timers
          2. 6.4.5.5.2 32-kHz Synchronized Timer (COUNTER_32K)
        6. 6.4.5.6  I2C
        7. 6.4.5.7  UART
        8. 6.4.5.8  McSPI
        9. 6.4.5.9  QSPI
        10. 6.4.5.10 McASP
        11. 6.4.5.11 DCAN
        12. 6.4.5.12 MCAN
        13. 6.4.5.13 GMAC_SW
        14. 6.4.5.14 SDIO
        15. 6.4.5.15 GPIO
        16. 6.4.5.16 ePWM
        17. 6.4.5.17 eCAP
        18. 6.4.5.18 eQEP
      6. 6.4.6 On-Chip Debug
  7. 7Applications, Implementation, and Layout
    1. 7.1 Introduction
      1. 7.1.1 Initial Requirements and Guidelines
    2. 7.2 Power Optimizations
      1. 7.2.1 Step 1: PCB Stack-up
      2. 7.2.2 Step 2: Physical Placement
      3. 7.2.3 Step 3: Static Analysis
        1. 7.2.3.1 PDN Resistance and IR Drop
      4. 7.2.4 Step 4: Frequency Analysis
      5. 7.2.5 System ESD Generic Guidelines
        1. 7.2.5.1 System ESD Generic PCB Guideline
        2. 7.2.5.2 Miscellaneous EMC Guidelines to Mitigate ESD Immunity
        3. 7.2.5.3 ESD Protection System Design Consideration
      6. 7.2.6 EMI / EMC Issues Prevention
        1. 7.2.6.1 Signal Bandwidth
        2. 7.2.6.2 Signal Routing
          1. 7.2.6.2.1 Signal Routing-Sensitive Signals and Shielding
          2. 7.2.6.2.2 Signal Routing-Outer Layer Routing
        3. 7.2.6.3 Ground Guidelines
          1. 7.2.6.3.1 PCB Outer Layers
          2. 7.2.6.3.2 Metallic Frames
          3. 7.2.6.3.3 Connectors
          4. 7.2.6.3.4 Guard Ring on PCB Edges
          5. 7.2.6.3.5 Analog and Digital Ground
    3. 7.3 Core Power Domains
      1. 7.3.1 General Constraints and Theory
      2. 7.3.2 Voltage Decoupling
      3. 7.3.3 Static PDN Analysis
      4. 7.3.4 Dynamic PDN Analysis
      5. 7.3.5 Power Supply Mapping
      6. 7.3.6 DPLL Voltage Requirement
      7. 7.3.7 Loss of Input Power Event
      8. 7.3.8 Example PCB Design
        1. 7.3.8.1 Example Stack-up
        2. 7.3.8.2 vdd_dspeve Example Analysis
    4. 7.4 Single-Ended Interfaces
      1. 7.4.1 General Routing Guidelines
      2. 7.4.2 QSPI Board Design and Layout Guidelines
        1. 7.4.2.1 If QSPI is operated in Mode 0 (POL=0, PHA=0):
        2. 7.4.2.2 If QSPI is operated in Mode 3 (POL=1, PHA=1):
    5. 7.5 Differential Interfaces
      1. 7.5.1 General Routing Guidelines
    6. 7.6 Clock Routing Guidelines
      1. 7.6.1 Oscillator Ground Connection
    7. 7.7 DDR2 Board Design and Layout Guidelines
      1. 7.7.1 DDR2 General Board Layout Guidelines
      2. 7.7.2 DDR2 Board Design and Layout Guidelines
        1. 7.7.2.1 Board Designs
        2. 7.7.2.2 DDR2 Interface
          1. 7.7.2.2.1  DDR2 Interface Schematic
          2. 7.7.2.2.2  Compatible JEDEC DDR2 Devices
          3. 7.7.2.2.3  PCB Stackup
          4. 7.7.2.2.4  Placement
          5. 7.7.2.2.5  DDR2 Keepout Region
          6. 7.7.2.2.6  Bulk Bypass Capacitors
          7. 7.7.2.2.7  High Speed Bypass Capacitors
          8. 7.7.2.2.8  Net Classes
          9. 7.7.2.2.9  DDR2 Signal Termination
          10. 7.7.2.2.10 VREF Routing
        3. 7.7.2.3 DDR2 CK and ADDR_CTRL Routing
    8. 7.8 DDR3 Board Design and Layout Guidelines
      1. 7.8.1 DDR3 General Board Layout Guidelines
      2. 7.8.2 DDR3 Board Design and Layout Guidelines
        1. 7.8.2.1  Board Designs
        2. 7.8.2.2  DDR3 Device Combinations
        3. 7.8.2.3  DDR3 Interface Schematic
          1. 7.8.2.3.1 32-Bit DDR3 Interface
          2. 7.8.2.3.2 16-Bit DDR3 Interface
        4. 7.8.2.4  Compatible JEDEC DDR3 Devices
        5. 7.8.2.5  PCB Stackup
        6. 7.8.2.6  Placement
        7. 7.8.2.7  DDR3 Keepout Region
        8. 7.8.2.8  Bulk Bypass Capacitors
        9. 7.8.2.9  High Speed Bypass Capacitors
          1. 7.8.2.9.1 Return Current Bypass Capacitors
        10. 7.8.2.10 Net Classes
        11. 7.8.2.11 DDR3 Signal Termination
        12. 7.8.2.12 VTT
        13. 7.8.2.13 CK and ADDR_CTRL Topologies and Routing Definition
          1. 7.8.2.13.1 Three DDR3 Devices
            1. 7.8.2.13.1.1 CK and ADDR_CTRL Topologies, Three DDR3 Devices
            2. 7.8.2.13.1.2 CK and ADDR_CTRL Routing, Three DDR3 Devices
          2. 7.8.2.13.2 Two DDR3 Devices
            1. 7.8.2.13.2.1 CK and ADDR_CTRL Topologies, Two DDR3 Devices
            2. 7.8.2.13.2.2 CK and ADDR_CTRL Routing, Two DDR3 Devices
          3. 7.8.2.13.3 One DDR3 Device
            1. 7.8.2.13.3.1 CK and ADDR_CTRL Topologies, One DDR3 Device
            2. 7.8.2.13.3.2 CK and ADDR/CTRL Routing, One DDR3 Device
        14. 7.8.2.14 Data Topologies and Routing Definition
          1. 7.8.2.14.1 DQS and DQ/DM Topologies, Any Number of Allowed DDR3 Devices
          2. 7.8.2.14.2 DQS and DQ/DM Routing, Any Number of Allowed DDR3 Devices
        15. 7.8.2.15 Routing Specification
          1. 7.8.2.15.1 CK and ADDR_CTRL Routing Specification
          2. 7.8.2.15.2 DQS and DQ Routing Specification
    9. 7.9 CVIDEO/SD-DAC Guidelines and Electrical Data/Timing
  8. 8Device and Documentation Support
    1. 8.1 Device Nomenclature
      1. 8.1.1 Standard Package Symbolization
      2. 8.1.2 Device Naming Convention
    2. 8.2 Tools and Software
    3. 8.3 Documentation Support
    4. 8.4 Related Links
    5. 8.5 Support Resources
    6. 8.6 Trademarks
    7. 8.7 Electrostatic Discharge Caution
    8. 8.8 Glossary
  9. 9Mechanical, Packaging, and Orderable Information
    1. 9.1 Packaging Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • ABF|367
Thermal pad, mechanical data (Package|Pins)
Orderable Information

GPMC/NOR Flash Interface Asynchronous Timing

Table 5-35 and Table 5-36 assume testing over the recommended operating conditions and electrical characteristic conditions below (see Figure 5-28, Figure 5-29, Figure 5-30, Figure 5-31, Figure 5-32 and Figure 5-33).

Table 5-35 GPMC/NOR Flash Interface Timing Requirements - Asynchronous Mode

NO. PARAMETER DESCRIPTION MIN MAX UNIT
FA5 tacc(DAT) Data Maximum Access Time (GPMC_FCLK cycles) H (1) cycles
FA20 tacc1-pgmode(DAT) Page Mode Successive Data Maximum Access Time (GPMC_FCLK cycles) P (2) cycles
FA21 tacc2-pgmode(DAT) Page Mode First Data Maximum Access Time (GPMC_FCLK cycles) H (1) cycles
- tsu(DV-OEH) Setup time, read gpmc_ad[15:0] valid before gpmc_oen_ren high 1.9 ns
- - th(OEH-DV) Hold time, read gpmc_ad[15:0] valid after gpmc_oen_ren high 1 ns
  1. H = Access Time × (TimeParaGranularity + 1)
  2. P = PageBurstAccessTime × (TimeParaGranularity + 1)

Table 5-36 GPMC/NOR Flash Interface Switching Characteristics - Asynchronous Mode

NO. PARAMETER DESCRIPTION MIN MAX UNIT
- tr(DO) Rising time, gpmc_ad[15:0] output data 0.447 4.067 ns
- - tf(DO) Fallling time, gpmc_ad[15:0] output data 0.43 4.463 ns
FA0 tw(nBEV) Pulse duration, gpmc_ben[1:0] valid time N ns
FA1 tw(nCSV) Pulse duration, gpmc_cs[7:0] low A ns
FA3 td(nCSV-nADVIV) Delay time, gpmc_cs[7:0] valid to gpmc_advn_ale invalid B - 0.2 B + 2.0 ns
FA4 td(nCSV-nOEIV) Delay time, gpmc_cs[7:0] valid to gpmc_oen_ren invalid (Single read) C - 0.2 C + 2.0 ns
FA9 td(AV-nCSV) Delay time, address bus valid to gpmc_cs[7:0] valid J - 0.2 J + 2.0 ns
FA10 td(nBEV-nCSV) Delay time, gpmc_ben[1:0] valid to gpmc_cs[7:0] valid J - 0.2 J + 2.0 ns
FA12 td(nCSV-nADVV) Delay time, gpmc_cs[7:0] valid to gpmc_advn_ale valid K - 0.2 K + 2.0 ns
FA13 td(nCSV-nOEV) Delay time, gpmc_cs[7:0] valid to gpmc_oen_ren valid L - 0.2 L + 2.0 ns
FA16 tw(AIV) Pulse duration, address invalid between 2 successive R/W accesses G ns
FA18 td(nCSV-nOEIV) Delay time, gpmc_cs[7:0] valid to gpmc_oen_ren invalid (Burst read) I - 0.2 I + 2.0 ns
FA20 tw(AV) Pulse duration, address valid : 2nd, 3rd and 4th accesses D ns
FA25 td(nCSV-nWEV) Delay time, gpmc_cs[7:0] valid to gpmc_wen valid E - 2 E + 2.0 ns
FA27 td(nCSV-nWEIV) Delay time, gpmc_cs[7:0] valid to gpmc_wen invalid F - 0.2 F + 2.0 ns
FA28 td(nWEV-DV) Delay time, gpmc_ wen valid to data bus valid 2 ns
FA29 td(DV-nCSV) Delay time, data bus valid to gpmc_cs[7:0] valid J - 0.2 J + 2.0 ns
FA37 td(nOEV-AIV) Delay time, gpmc_oen_ren valid to gpmc_ad[15:0] multiplexed address bus phase end 2 ns
  1. For single read: N = RdCycleTime × (TimeParaGranularity + 1) × GPMC_FCLK
    For single write: N = WrCycleTime × (TimeParaGranularity + 1) × GPMC_FCLK
    For burst read: N = (RdCycleTime + (n – 1) × PageBurstAccessTime) × (TimeParaGranularity + 1) × GPMC_FCLK
    For burst write: N = (WrCycleTime + (n – 1) × PageBurstAccessTime) × (TimeParaGranularity + 1) × GPMC_FCLK
  2. For single read: A = (CSRdOffTime - CSOnTime) × (TimeParaGranularity + 1) × GPMC_FCLK
    For single write: A = (CSWrOffTime – CSOnTime) × (TimeParaGranularity + 1) × GPMC_FCLK
    For burst read: A = (CSRdOffTime - CSOnTime + (n - 1) × PageBurstAccessTime) × (TimeParaGranularity + 1) × GPMC_FCLK period
    For burst write: A = (CSWrOffTime - CSOnTime + (n - 1) × PageBurstAccessTime) × (TimeParaGranularity + 1) × GPMC_FCLK period with n the page burst access number.
  3. For reading: B = ((ADVRdOffTime – CSOnTime) × (TimeParaGranularity + 1) + 0.5 × (ADVExtraDelay – CSExtraDelay)) × GPMC_FCLK
    For writing: B = ((ADVWrOffTime – CSOnTime) × (TimeParaGranularity + 1) + 0.5 × (ADVExtraDelay – CSExtraDelay)) × GPMC_FCLK
  4. C = ((OEOffTime – CSOnTime) × (TimeParaGranularity + 1) + 0.5 × (OEExtraDelay – CSExtraDelay)) × GPMC_FCLKFor single read: C = RdCycleTime × (TimeParaGranularity + 1) × GPMC_FCLK
  5. J = (CSOnTime × (TimeParaGranularity + 1) + 0.5 × CSExtraDelay) × GPMC_FCLK
  6. K = ((ADVOnTime – CSOnTime) × (TimeParaGranularity + 1) + 0.5 × (ADVExtraDelay – CSExtraDelay)) × GPMC_FCLK
  7. L = ((OEOnTime – CSOnTime) × (TimeParaGranularity + 1) + 0.5 × (OEExtraDelay – CSExtraDelay)) × GPMC_FCLK
  8. G = Cycle2CycleDelay × GPMC_FCLK × (TimeParaGranularity + 1)
  9. I = ((OEOffTime + (n – 1) × PageBurstAccessTime – CSOnTime) × (TimeParaGranularity + 1) + 0.5 × (OEExtraDelay – CSExtraDelay)) × GPMC_FCLK
  10. D = PageBurstAccessTime × (TimeParaGranularity + 1) × GPMC_FCLK
  11. E = ((WEOnTime – CSOnTime) × (TimeParaGranularity + 1) + 0.5 × (WEExtraDelay – CSExtraDelay)) × GPMC_FCLK
  12. F = ((WEOffTime – CSOnTime) × (TimeParaGranularity + 1) + 0.5 × (WEExtraDelay – CSExtraDelay)) × GPMC_FCLK
DRA780 DRA781 DRA782 DRA783 DRA784 DRA785 DRA786 DRA787 DRA788 SPRS91v_GPMC_07.gifFigure 5-28 GPMC / NOR Flash - Asynchronous Read - Single Word Timing(1)(2)(3)
  1. In gpmc_csi, i = 0 to 7. In gpmc_waitj, j = 0 to 1.
  2. FA5 parameter illustrates amount of time required to internally sample input data. It is expressed in number of GPMC functional clock cycles. From start of read cycle and after FA5 functional clock cycles, input Data will be internally sampled by active functional clock edge. FA5 value must be stored inside AccessTime register bits field.
  3. GPMC_FCLK is an internal clock (GPMC functional clock) not provided externally.
  4. The "DIR" (direction control) output signal is NOT pinned out on any of the device pads. It is an internal signal only representing a signal direction on the GPMC data bus.
DRA780 DRA781 DRA782 DRA783 DRA784 DRA785 DRA786 DRA787 DRA788 SPRS91v_GPMC_08.gifFigure 5-29 GPMC / NOR Flash - Asynchronous Read - 32-bit Timing(1)(2)(3)
  1. In “gpmc_csi”, i = 0 to 7. In “gpmc_waitj”, j = 0 to 1.
  2. FA5 parameter illustrates amount of time required to internally sample input Data. It is expressed in number of GPMC functional clock cycles. From start of read cycle and after FA5 functional clock cycles, input Data will be internally sampled by active functional clock edge. FA5 value should be stored inside AccessTime register bits field
  3. GPMC_FCLK is an internal clock (GPMC functional clock) not provided externally
  4. The "DIR" (direction control) output signal is NOT pinned out on any of the device pads. It is an internal signal only representing a signal direction on the GPMC data bus.
DRA780 DRA781 DRA782 DRA783 DRA784 DRA785 DRA786 DRA787 DRA788 SPRS91v_GPMC_09.gifFigure 5-30 GPMC / NOR Flash - Asynchronous Read - Page Mode 4x16-bit Timing(1)(2)(3)(4)
  1. In “gpmc_csi”, i = 0 to 7. In “gpmc_waitj”, j = 0 to 1
  2. FA21 parameter illustrates amount of time required to internally sample first input Page Data. It is expressed in number of GPMC functional clock cycles. From start of read cycle and after FA21 functional clock cycles, First input Page Data will be internally sampled by active functional clock edge. FA21 calculation is detailled in a separated application note (ref …) and should be stored inside AccessTime register bits field.
  3. FA20 parameter illustrates amount of time required to internally sample successive input Page Data. It is expressed in number of GPMC functional clock cycles. After each access to input Page Data, next input Page Data will be internally sampled by active functional clock edge after FA20 functional clock cycles. FA20 is also the duration of address phases for successive input Page Data (excluding first input Page Data). FA20 value should be stored in PageBurstAccessTime register bits field.
  4. GPMC_FCLK is an internal clock (GPMC functional clock) not provided externally
  5. The "DIR" (direction control) output signal is NOT pinned out on any of the device pads. It is an internal signal only representing a signal direction on the GPMC data bus.
DRA780 DRA781 DRA782 DRA783 DRA784 DRA785 DRA786 DRA787 DRA788 SPRS91v_GPMC_10.gifFigure 5-31 GPMC / NOR Flash - Asynchronous Write - Single Word Timing(1)
  1. In “gpmc_csi”, i = 0 to 7. In “gpmc_waitj”, j = 0 to 1.
  2. The "DIR" (direction control) output signal is NOT pinned out on any of the device pads. It is an internal signal only representing a signal direction on the GPMC data bus.
DRA780 DRA781 DRA782 DRA783 DRA784 DRA785 DRA786 DRA787 DRA788 SPRS91v_GPMC_11.gifFigure 5-32 GPMC / Multiplexed NOR Flash - Asynchronous Read - Single Word Timing(1)(2)(3)
  1. In “gpmc_csi”, i = 0 to 7. In “gpmc_waitj”, j = 0 to 1
  2. FA5 parameter illustrates amount of time required to internally sample input Data. It is expressed in number of GPMC functional clock cycles. From start of read cycle and after FA5 functional clock cycles, input Data will be internally sampled by active functional clock edge. FA5 value should be stored inside AccessTime register bits field.
  3. GPMC_FCLK is an internal clock (GPMC functional clock) not provided externally
  4. The "DIR" (direction control) output signal is NOT pinned out on any of the device pads. It is an internal signal only representing a signal direction on the GPMC data bus.
DRA780 DRA781 DRA782 DRA783 DRA784 DRA785 DRA786 DRA787 DRA788 SPRS91v_GPMC_12.gifFigure 5-33 GPMC / Multiplexed NOR Flash - Asynchronous Write - Single Word Timing(1)
  1. In “gpmc_csi”, i = 0 to 7. In “gpmc_waitj”, j = 0 to 1.
  2. The "DIR" (direction control) output signal is NOT pinned out on any of the device pads. It is an internal signal only representing a signal direction on the GPMC data bus.