SLVSHC7B December   2023  – September 2025 DRV8334

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
    1. 4.1 Pin Functions 48-Pin DRV8334
  6. 5 Specification
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings DRV8334
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Timing Requirements
    7. 5.7 SPI Timing Diagrams
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Three BLDC Gate Drivers
        1. 6.3.1.1 PWM Control Modes
          1. 6.3.1.1.1 6x PWM Mode
          2. 6.3.1.1.2 3x PWM Mode with INLx enable control
          3. 6.3.1.1.3 3x PWM Mode with SPI enable control
          4. 6.3.1.1.4 1x PWM Mode
          5. 6.3.1.1.5 SPI Gate Drive Mode
        2. 6.3.1.2 Gate Drive Architecture
          1. 6.3.1.2.1 Bootstrap diode
          2. 6.3.1.2.2 GVDD Charge pump/LDO
          3. 6.3.1.2.3 VCP Trickle Charge pump
          4. 6.3.1.2.4 Gate Driver Output
          5. 6.3.1.2.5 Passive and Semi-active pull-down resistor
          6. 6.3.1.2.6 TDRIVE Gate Drive Timing Control
          7. 6.3.1.2.7 Propagation Delay
          8. 6.3.1.2.8 Deadtime and Cross-Conduction Prevention
      2. 6.3.2 Low-Side Current Sense Amplifiers
        1. 6.3.2.1 Unidirectional Current Sense Operation
        2. 6.3.2.2 Bidirectional Current Sense Operation
      3. 6.3.3 Gate Driver Shutdown
        1. 6.3.3.1 DRVOFF Gate Driver Shutdown
        2. 6.3.3.2 Gate Driver Shutdown Timing Sequence
      4. 6.3.4 Gate Driver Protective Circuits
        1. 6.3.4.1  PVDD Supply Undervoltage Warning (PVDD_UVW)
        2. 6.3.4.2  PVDD Supply Undervoltage Lockout (PVDD_UV)
        3. 6.3.4.3  PVDD Supply Overvoltage Fault (PVDD_OV)
        4. 6.3.4.4  GVDD Undervoltage Lockout (GVDD_UV)
        5. 6.3.4.5  GVDD Overvoltage Fault (GVDD_OV)
        6. 6.3.4.6  BST Undervoltage Lockout (BST_UV)
        7. 6.3.4.7  BST Overvoltage Fault (BST_OV)
        8. 6.3.4.8  VCP Undervoltage Fault (CP_OV)
        9. 6.3.4.9  VCP Overvoltage Fault (CP_OV)
        10. 6.3.4.10 VDRAIN Undervoltage Fault (VDRAIN_UV)
        11. 6.3.4.11 VDRAIN Overvoltage Fault (VDRAIN_OV)
        12. 6.3.4.12 MOSFET VGS Monitoring Protection
        13. 6.3.4.13 MOSFET VDS Overcurrent Protection (VDS_OCP)
        14. 6.3.4.14 VSENSE Overcurrent Protection (SEN_OCP)
        15. 6.3.4.15 Phase Comparators
        16. 6.3.4.16 Thermal Shutdown (OTSD)
        17. 6.3.4.17 Thermal Warning (OTW)
        18. 6.3.4.18 OTP CRC
        19. 6.3.4.19 SPI Watchdog Timer
        20. 6.3.4.20 Phase Diagnostic
    4. 6.4 Device Functional Modes
      1. 6.4.1 Gate Driver Functional Modes
        1. 6.4.1.1 Sleep Mode
        2. 6.4.1.2 Operating Mode
      2. 6.4.2 Device Power Up Sequence
    5. 6.5 Programming
      1. 6.5.1 SPI
      2. 6.5.2 SPI Format
      3. 6.5.3 SPI Format Diagrams
  8. 7 Register Maps
    1. 7.1 STATUS Registers
    2. 7.2 CONTROL Registers
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Typical Application with 48-pin package
        1. 8.2.1.1 External Components
      2. 8.2.2 Application Curves
    3. 8.3 Layout
      1. 8.3.1 Layout Guidelines
      2. 8.3.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Community Resources
    4. 9.4 Trademarks
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information
    1. 11.1 Package Option Addendum
    2. 11.2 Tape and Reel Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Three phase half-bridge gate driver
    • Drives six N-channel MOSFETs (NMOS)
    • 4.5 to 60V wide operating voltage range
    • Bootstrap architecture for high-side gate driver
    • Strong GVDD charge pump to support up to 50mA average gate switching current enables driving 400nC MOSFETs at 20kHz
    • Trickle charge pump to support 100% PWM duty cycle and to generate overdrive supply to drive external protection circuits
  • Smart Gate Drive architecture
    • 45-level configurable peak gate drive current up to 1000 / 2000mA (source / sink)
    • Three-step dynamic drive current control
    • Configurable soft shutdown to minimize inductive voltage spikes during overcurrent shutdown
  • Low-side Current Sense Amplifier
    • Sub-1mV low input offset across temperature
    • 9-level adjustable gain
  • SPI-based detailed configuration and diagnostics
  • DRVOFF pin to disable driver independently
  • High voltage wake up pin (nSLEEP)
  • 6x, 3x, 1x, and Independent PWM Modes
  • Supports 3.3V, and 5V Logic Inputs
  • Integrated protection features
    • Battery and power supply voltage monitors
    • Phase feedback comparator
    • MOSFET VDS and Rsense over current monitors
    • MOSFET VGS gate fault monitors
    • Device thermal warning and shutdown
    • Fault condition indicator pin