SLOSEB6D February 2025 – November 2025 LMH13000
PRODUCTION DATA
Refer to the PDF data sheet for device specific package drawings
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| IOUT DC PERFORMANCE | |||||||
| IOUT | Adjustable current(1) | VSET = 0.01V to 2V | TA = –40℃ to +125℃ | 0.005 | 1 | A | |
| IOUT accuracy | IOUT = 0.1A | ±14.5 | % | ||||
| IOUT = 1A | ±5.5 | ||||||
| IOUT variation | IOUT = 0.1A | TA = –40℃ to +125℃ | ±3.5 | % | |||
| IOUT = 1A | TA = –40℃ to +125℃ | ±1 | |||||
| MINVIOUT | Minimum VIOUT(2) | IOUT = 0.1A | TA = –40℃ to +125℃ | 0.7 | V | ||
| IOUT = 1A | TA = –40℃ to +125℃ | 2.1 | |||||
| ILEAK | Leakage current at IOUT | PD = 1 or LVDS = 0 | 170 | nA | |||
| TA = –40℃ to +125℃ | 48 | µA | |||||
| MAXVIOUT | Maximum VIOUT | 18 | V | ||||
| IOUT AC PERFORMANCE (RDAMP = 1Ω, LLOAD = 1nH), SEE Figure 5-31 | |||||||
| CIOUT | IOUT impedance | Parallel capacitance(3) | See Figure 5-12 | pF | |||
| LIOUT | IOUT impedance | Series inductance(4) | 100 | pH | |||
| IOUT noise | IOUT = 100mA, integration bandwidth = 100MHz |
TA = –40℃ to +125℃ | 60 | µARMS | |||
| tr | IOUT rise time | IOUT = 1A, VLD = 4V | 0.4 | ns | |||
| TA = –40℃ to +125℃ | 0.5 | ||||||
| tf | IOUT fall time | IOUT = 1A, VLD = 4V | 0.3 | ns | |||
| TA = –40℃ to +125℃ | 0.4 | ||||||
| IOUT overshoot | IOUT = 1A, VLD = 4V | 23 | % | ||||
| IOUT undershoot | IOUT = 1A, VLD = 4V | 10 | % | ||||
| IOUT settling time | IOUT = 1A, 10% settling | 3 | ns | ||||
| VSET (IOUT CONTROL PIN) | |||||||
| VSET input bias current | TA = –40℃ to +125℃ | 50 | nA | ||||
| VSET input impedance | 4 || 8 | GΩ || pF | |||||
| VSET | VSET pin voltage | For IOUT = 0.005A to 1A | 0.01 | 2 | V | ||
| k | Scaling factor for VSET to IOUT | IOUT = VSET / RSET × k | 10000 | ||||
| IOUT / VSET bandwidth | 800 | kHz | |||||
| RSET | Recommended resistor on RSET | 20 | kΩ | ||||
| CONSTANT CURRENT (ICC), FOR MODE = 0 AND MODE = 1 | |||||||
| ICC | Constant current | For RBIAS = 25kΩ to 500Ω | 4 | 200 | mA | ||
| Disable | Connect RBIAS | AVDD | V | ||||
| Accuracy | ICC = 100mA | ±5.5 | % | ||||
| TA = –40℃ to +125℃ | ±7.5 | ||||||
| LVDS INPUT | |||||||
| LVDS to IOUT propagation delay | IOUT = 1A | 10 | ns | ||||
| TA = –40℃ to +125℃ | 13 | ||||||
| Frequency (LVDS/TTL/CMOS) | 250 | MHz | |||||
| EP and EN voltage | VCM ± VDIFF(5) | f > 10MHz | AGND + 0.5 | AVDD – 0.5 | V | ||
| DC and f < 10MHz | AGND | AVDD | |||||
| IOUT jitter | f < 250MHz, 50% duty cycle | 6 | ps | ||||
| POWER SUPPLY | |||||||
| Static quiescent current | LVDS = 0, VSET = 0.2V | 7 | mA | ||||
| TA = –40℃ to +125℃ | 8 | ||||||
| Dynamic quiescent current | ΔLVDS at 10MHz, IOUT = 1A | 13 | mA | ||||
| ΔLVDS at 250MHz, IOUT = 1A | 80 | mA | |||||
| THERMAL SHUTDOWN, FOR MODE = 0 AND MODE = 1 | |||||||
| TSHD | Thermal shutdown temperature | 160 | ℃ | ||||
| Thermal shutdown hysteresis | 10 | ℃ | |||||
| Die thermal time constant | Device mounted on a JEDEC PCB | See Figure 5-28 | |||||
| MODE, FOR MODE = 0 AND MODE = 1 | |||||||
| Operating mode | Low-current mode, MODE = 0 | TA = –40℃ to +125℃ | AGND + 1.2 | V | |||
| High-current mode, MODE = 1 | TA = –40℃ to +125℃ | AVDD – 1.2 | |||||
| POWER DOWN, FOR MODE = 0 AND MODE = 1 | |||||||
| IPD | Power-down current | TA = –40℃ to +125℃ | 35 | µA | |||
| Enable voltage threshold | PD = 0 | TA = –40℃ to +125℃ | AGND + 1.2 | V | |||
| Disable voltage threshold | PD = 1 | TA = –40℃ to +125℃ | AVDD – 1.2 | V | |||
| Turn-on time delay | PD = 1 → 0 | TA = –40℃ to +125℃ | 15 | µs | |||
| Turn-off time delay | PD = 0 → 1 | TA = –40℃ to +125℃ | 1 | µs | |||