SLVS568E January   2005  – July 2025 TLV341 , TLV341A , TLV342 , TLV342S

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information: TLV341
    5. 5.5  Thermal Information: TLV342
    6. 5.6  Thermal Information: TLV342S
    7. 5.7  Electrical Characteristics: V+ = 1.8V
    8. 5.8  Electrical Characteristics: V+ = 5V
    9. 5.9  Shutdown Characteristics: V+ = 1.8V
    10. 5.10 Shutdown Characteristics: V+ = 5V
    11. 5.11 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 PMOS Input Stage
      2. 6.3.2 CMOS Output Stage
      3. 6.3.3 Shutdown
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
      3. 7.2.3 Application Curve
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Receiving Notification of Documentation Updates
    2. 8.2 Support Resources
    3. 8.3 Trademarks
    4. 8.4 Electrostatic Discharge Caution
    5. 8.5 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • 1.8V and 5V performance
  • Low offset (A grade)
    • 1.25mV maximum (25°C)
    • 1.7mV maximum (–40°C to 125°C)
  • Rail-to-rail output swing
  • Wide common-mode input voltage range: –0.2V to (V+ – 0.5V)
  • Input bias current: 1pA (typical)
  • Input offset voltage: 0.3mV (typical)
  • Low supply current: 70μA/channel
  • Low shutdown current:
    10pA (typical) per channel
  • Gain bandwidth: 2.3MHz (typical)
  • Slew rate: 0.9V/μs (typical)
  • Turnon time from shutdown: 5μs (typical)
  • Input referred voltage noise (at 10kHz):
    20nV/√ Hz
  • ESD protection exceeds JESD 22:
    • 2000V Human-Body Model (HBM)
    • 750V Charged-device model (CDM)