SLVS568E January   2005  – July 2025 TLV341 , TLV341A , TLV342 , TLV342S

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information: TLV341
    5. 5.5  Thermal Information: TLV342
    6. 5.6  Thermal Information: TLV342S
    7. 5.7  Electrical Characteristics: V+ = 1.8V
    8. 5.8  Electrical Characteristics: V+ = 5V
    9. 5.9  Shutdown Characteristics: V+ = 1.8V
    10. 5.10 Shutdown Characteristics: V+ = 5V
    11. 5.11 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 PMOS Input Stage
      2. 6.3.2 CMOS Output Stage
      3. 6.3.3 Shutdown
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
      3. 7.2.3 Application Curve
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Receiving Notification of Documentation Updates
    2. 8.2 Support Resources
    3. 8.3 Trademarks
    4. 8.4 Electrostatic Discharge Caution
    5. 8.5 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.4 Thermal Information: TLV341

THERMAL METRIC(1)TLV341UNIT
DBV
(SOT-23)		DCK
(SC70)		DRL
(SOT)
6 PINS6 PINS6 PINS
RθJAJunction-to-ambient thermal resistance193.4196.8221.1°C/W
RθJC(top)Junction-to-case (top) thermal resistance145.682.4109.1°C/W
RθJBJunction-to-board thermal resistance44.195.2111.4°C/W
ψJTJunction-to-top characterization parameter34.11.86.2°C/W
ψJBJunction-to-board characterization parameter43.493.2109.8°C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.