RG is the gate driver resistor for the power switch (QSW). The selection of this resistor value must be done in conjunction with EMI compliance testing and efficiency testing. Using a larger resistor value for RG slows down the turnon and turnoff of the MOSFET. A slower switching speed reduces EMI but also increases the switching loss. A tradeoff between switching loss and EMI performance must be carefully performed. For this design, a 10‑Ω resistor was chosen for the gate drive resistor.