SPRK066 October   2025 F28377D-SEP

 

  1.   1
  2.   F28377D-SEP Abstract
  3.   Trademarks
  4. 1Introduction
  5. 2Single-Event Effects (SEE)
  6. 3Device and Test Board Information
  7. 4Irradiation Facility and Setup
  8. 5Depth, Range, and LETEFF Calculation
  9. 6Test Setup and Procedures
  10. 7Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
  11. 8Single-Event Transients (SET)
    1. 8.1 GPIO Testing and Results
      1. 8.1.1 GPIO Test Setup
      2. 8.1.2 GPIO SET Analysis
      3. 8.1.3 GPIO SET Summary
    2. 8.2 ePWM Testing and Results
      1. 8.2.1 ePWM Testing Setup
      2. 8.2.2 ePWM SET Analysis
      3. 8.2.3 ePWM SET Summary
    3. 8.3 SRAM Testing and Results
      1. 8.3.1 SRAM Test Setup
      2. 8.3.2 SRAM SET Summary
    4. 8.4 Flash Memory Testing and Results
      1. 8.4.1 Flash Test Setup
      2. 8.4.2 Flash SET Summary
  12. 9Summary
  13.   A Total Ionizing Dose from SEE Experiments
  14.   B References

8.2.3 ePWM SET Summary

The ePWM transient event counts and event cross sections are shown in Table 8-7. Key takeaways from this testing are as follows:

  • Type 1 and Type 2 faults have similar occurrence rates versus Type 3 faults, which are an order of magnitude less likely to occur
  • In all cases, there is potential for a PWM primary output and complementary output (A and B outputs) to be un-evenly effected by radiation effects. Due to this it is recommended to choose a gate driver that has interlock protection.
Table 8-4 ePWM Transient Upset Summary
Test Pattern LETEFF(MeV·cm2/mg Ion Type Transient Type Event Count Fluence (# of ions) Cross Section(Event Count/LETEFF1
ePWM 45 109Ag Type 1 100 9.95 E5 1.37 E-4
ePWM 8.5 40Ar Type 1 9 9.96 E5 4.70 E-6
ePWM 45 109Ag Type 2 62 1.01 E6 5.93 E-5
ePWM 8.5 40Ar Type 2 12 9.96 E5 3.26 E-6
ePWM 45 109Ag Type 3 2 8.13 E5 4.35 E-7
ePWM 8.5 40Ar Type 3 1 7.44 E5 1.49 E-6
  1. Some runs had no recorded transients, as such an assumed MFTF was substituted for those runs and the average cross section calculation for this transient.