SPRK066 October   2025 F28377D-SEP

 

  1.   1
  2.   F28377D-SEP Abstract
  3.   Trademarks
  4. 1Introduction
  5. 2Single-Event Effects (SEE)
  6. 3Device and Test Board Information
  7. 4Irradiation Facility and Setup
  8. 5Depth, Range, and LETEFF Calculation
  9. 6Test Setup and Procedures
  10. 7Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
  11. 8Single-Event Transients (SET)
    1. 8.1 GPIO Testing and Results
      1. 8.1.1 GPIO Test Setup
      2. 8.1.2 GPIO SET Analysis
      3. 8.1.3 GPIO SET Summary
    2. 8.2 ePWM Testing and Results
      1. 8.2.1 ePWM Testing Setup
      2. 8.2.2 ePWM SET Analysis
      3. 8.2.3 ePWM SET Summary
    3. 8.3 SRAM Testing and Results
      1. 8.3.1 SRAM Test Setup
      2. 8.3.2 SRAM SET Summary
    4. 8.4 Flash Memory Testing and Results
      1. 8.4.1 Flash Test Setup
      2. 8.4.2 Flash SET Summary
  12. 9Summary
  13.   A Total Ionizing Dose from SEE Experiments
  14.   B References

5 Depth, Range, and LETEFF Calculation

TMS320F38377D-SEP Generalized Cross-Section of the F021 Technology BEOL Stack on the F28377D-SEP[Left] and SEUSS 2020 Application Used to Determine Key Ion Parameters [Right] Figure 5-1 Generalized Cross-Section of the F021 Technology BEOL Stack on the F28377D-SEP[Left] and SEUSS 2020 Application Used to Determine Key Ion Parameters [Right]

The F28377D-SEP is fabricated in the TI CMOS 65nm process with a back-end-of-line (BEOL) stack consisting of 7 levels of standard thickness aluminum. The total stack height from the surface of the passivation to the silicon surface is 380μm based on nominal layer thickness as shown in Figure 5-1. Accounting for energy loss through the 1-mil thick Aramica beam port window, the 40-mm air gap, and the BEOL stack over the F28377D-SEP, the effective LET (LETEFF) at the surface of the silicon substrate and the depth was determined with the SEUSS 2020 Software (provided by the Texas A&M Cyclotron Institute and based on the latest SRIM-2013 [7] models). The results are shown in Ion LETEFF, Depth, and Range in Silicon.

Table 5-1 Ion LETEFF, Depth, and Range in Silicon
ION TYPE Beam Energy (MeV/nucleon) ANGLE OF INCIDENCE DEGRADER STEPS (#) DEGRADER ANGLE RANGE IN SILICON

(µm)

 LETEFF (MeV·cm2/mg)
109Ag 15 0 0 0 111.2 45
40Ar 15 0 0 0 196.8 8