SCEA144 December 2024 LSF0101 , LSF0102 , LSF0108 , LSF0204
During normal operation, there exists a leakage current that flows into the high-power supply (typ. referenced as VREFB) and out the lower power supply (typ. referenced as VREFA). The current flowing through the device is limited by the 200kΩ bias resistor to limit the current flowing through the internal FET and protect the lower supply from being overexposed to the otherwise high current, which can be presented by VREFB-VREFA-VTH/200k.
Not all power supplies are capable of sinking in this back current, which is especially for the case when using low dropout regulator (LDO) as a power supply. If the LDO cannot sink this current, the LDO causes the power supply to float up above the expected levels of where it was at previously. For cases where the I/Os are also pulled up to LDO, their voltage levels also rise and can potentially damage both the signaling devices and the power supply. To accommodate for this current that cannot be accepted by the lower power supply, we recommend to add a relatively weak pulldown resistor at this node to create a path for the current to sink into instead.