SGLS423A February   2025  – December 2025 SN55LVRA4-SEP

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Typical Characteristics
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Receiver Output States
      2. 7.3.2 General Purpose Comparator
      3. 7.3.3 Common-Mode Range vs Supply Voltage
    4. 7.4 Equivalent Input and Output Schematic Diagrams
    5. 7.5 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Detailed Design Procedure
      2. 8.2.2 Design Requirements
      3. 8.2.3 Application Performance Plots
      4. 8.2.4 Cold Sparing
    3. 8.3 Active Failsafe Feature
    4. 8.4 ECL/PECL-to-LVTTL Conversion with TI's LVDS Receiver
    5. 8.5 Test Conditions
    6. 8.6 Equipment
  10. 9 Power Supply Recommendations
    1. 9.1 Supply Bypass Capacitance
  11. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Microstrip vs. Stripline Topologies
      2. 10.1.2 Dielectric Type and Board Construction
      3. 10.1.3 Recommended Stack Layout
      4. 10.1.4 Separation Between Traces
      5. 10.1.5 Crosstalk and Ground Bounce Minimization
    2. 10.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information

5.2 ESD Ratings

VALUE UNIT
V(BUS_ESD) Electrostatic discharge Bus pins; A & B; Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±15000 V
V(HBM_ESD) Electrostatic discharge All other pins: Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±4000 V
V(CDM_ESD) Electrostatic discharge Charged-device model (CDM), per JEDEC specification JS-002(2) ±1000
(1) JEDEC document JEP155 states that 500V HBM allows safe manufacturing with a standard ESD control process. .
(2) JEDEC document JEP157 states that 250V CDM allows safe manufacturing with a standard ESD control process.