SLAA834B May   2018  – August 2021 MSP430FR2000 , MSP430FR2032 , MSP430FR2033 , MSP430FR2100 , MSP430FR2110 , MSP430FR2111 , MSP430FR2153 , MSP430FR2155 , MSP430FR2310 , MSP430FR2311 , MSP430FR2353 , MSP430FR2355 , MSP430FR2422 , MSP430FR2433 , MSP430FR2475 , MSP430FR2476 , MSP430FR2512 , MSP430FR2522 , MSP430FR2532 , MSP430FR2533 , MSP430FR2632 , MSP430FR2633 , MSP430FR2672 , MSP430FR2673 , MSP430FR2675 , MSP430FR2676 , MSP430FR4131 , MSP430FR4132 , MSP430FR4133 , MSP430FR5720 , MSP430FR5721 , MSP430FR5722 , MSP430FR5723 , MSP430FR5724 , MSP430FR5725 , MSP430FR5726 , MSP430FR5727 , MSP430FR5728 , MSP430FR5729 , MSP430FR5730 , MSP430FR5731 , MSP430FR5732 , MSP430FR5733 , MSP430FR5734 , MSP430FR5735 , MSP430FR5736 , MSP430FR5737 , MSP430FR5738 , MSP430FR5739 , MSP430FR5847 , MSP430FR58471 , MSP430FR5848 , MSP430FR5849 , MSP430FR5857 , MSP430FR5858 , MSP430FR5859 , MSP430FR5867 , MSP430FR58671 , MSP430FR5868 , MSP430FR5869 , MSP430FR5870 , MSP430FR5872 , MSP430FR58721 , MSP430FR5887 , MSP430FR5888 , MSP430FR5889 , MSP430FR58891 , MSP430FR5922 , MSP430FR59221 , MSP430FR5947 , MSP430FR59471 , MSP430FR5948 , MSP430FR5949 , MSP430FR5957 , MSP430FR5958 , MSP430FR5959 , MSP430FR5962 , MSP430FR5964 , MSP430FR5967 , MSP430FR5968 , MSP430FR5969 , MSP430FR59691 , MSP430FR5970 , MSP430FR5972 , MSP430FR59721 , MSP430FR5986 , MSP430FR5987 , MSP430FR5988 , MSP430FR5989 , MSP430FR59891 , MSP430FR5992 , MSP430FR5994 , MSP430FR59941

 

  1.   Trademarks
  2. 1 Introduction
  3. 2 Configuration of MSP430FR4xx and MSP430FR2xx Devices
  4. 3 In-System Programming of Nonvolatile Memory
    1. 3.1 Ferroelectric RAM (FRAM) Overview
    2. 3.2 FRAM Cell
    3. 3.3 Protecting FRAM Using Write Protection Bits in FR4xx Family
    4. 3.4 FRAM Memory Wait States
    5. 3.5 Bootloader (BSL)
    6. 3.6 JTAG and Security
    7. 3.7 Production Programming
  5. 4 Hardware Migration Considerations
  6. 5 Device Calibration Information
  7. 6 Important Device Specifications
  8. 7 Core Architecture Considerations
    1. 7.1 Power Management Module (PMM)
      1. 7.1.1 Core LDO and LPM3.5 LDO
      2. 7.1.2 SVS
      3. 7.1.3 VREF
    2. 7.2 Clock System
      1. 7.2.1 DCO Frequencies
      2. 7.2.2 FLL, REFO, and DCO Tap
      3. 7.2.3 FRAM Access at 16 MHz and 24 MHz and Clocks-on-Demand
    3. 7.3 Operating Modes, Wakeup, and Reset
      1. 7.3.1 LPMx.5
      2. 7.3.2 Reset
    4. 7.4 Determining the Cause of Reset
    5. 7.5 Interrupt Vectors
    6. 7.6 FRAM and the FRAM Controller
    7. 7.7 RAM Controller (RAMCTL)
  9. 8 Peripheral Considerations
    1. 8.1  Overview of the Peripherals on the FR4xx and FR59xx Families
    2. 8.2  Ports
      1. 8.2.1 Digital Input/Output
      2. 8.2.2 Capacitive Touch I/O
    3. 8.3  Communication Modules
    4. 8.4  Timer and IR Modulation Logic
    5. 8.5  Backup Memory
    6. 8.6  RTC Counter
    7. 8.7  LCD
    8. 8.8  Interrupt Compare Controller (ICC)
    9. 8.9  Analog-to-Digital Converters
      1. 8.9.1 ADC12_B to ADC
    10. 8.10 Enhanced Comparator (eCOMP)
    11. 8.11 Operational Amplifiers
    12. 8.12 Smart Analog Combo (SAC)
  10. 9 ROM Libraries
  11. 10Conclusion
  12. 11References
  13. 12Revision History

3.1 Ferroelectric RAM (FRAM) Overview

Both the FR4xx MCU and FR59xx MCU support FRAM nonvolatile memory. Using FRAM is very similar to using static RAM (SRAM). The introduction of FRAM as an embedded memory in a general-purpose ultra-low power MCU was in the Texas Instruments 16-bit MSP430 product line, in the MSP430FR57xx MCUs.

Some of the key attributes of FRAM are:

  • FRAM is nonvolatile. It retains its contents on loss of power.
  • The embedded FRAM on MSP430 devices can be accessed (read or write) at up to a maximum speed of 8 MHz. Above 8 MHz, wait states are used when accessing FRAM.
  • Writing to FRAM and reading from FRAM requires no setup or preparation such as pre-erase before write operation.
  • FRAM is not segmented and each bit is individually erasable, writable, and addressable.
  • FRAM segments do not require an erase before a write.
  • FRAM write accesses are low power, because writing to FRAM does not require a charge pump.
  • FRAM writes can be performed across the full voltage range of the device.
  • FRAM write speeds can reach up to 8 MBps with a typical write speed of approximately 2 MBps. The high speed of writes is inherent to the technology and aided by the elimination of the erase bottleneck that is prevalent in other nonvolatile memory technologies. In comparison, typical MSP430 flash write speed including the erase time is approximately 14 kBps.