SLASFB9B June   2025  – March 2026 MSPM0H3215 , MSPM0H3216

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Functional Block Diagram
  6. 5 Device Comparison
  7. 6 Pin Configuration and Functions
    1. 6.1 Pin Diagrams
    2. 6.2 Pin Attributes
      1.      10
    3. 6.3 Signal Descriptions
      1.      12
      2.      13
      3.      14
      4.      15
      5.      16
      6.      17
      7.      18
      8.      19
      9.      20
      10.      21
      11.      22
    4. 6.4 Connections for Unused Pins
  8. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3   Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Supply Current Characteristics
      1. 7.5.1 RUN/SLEEP Modes
      2. 7.5.2 STOP/STANDBY Modes
    6. 7.6  Power Supply Sequencing
      1. 7.6.1 POR and BOR
      2. 7.6.2 Power Supply Ramp
    7. 7.7  Flash Memory Characteristics
    8. 7.8  Timing Characteristics
    9. 7.9  Clock Specifications
      1. 7.9.1 System Oscillator (SYSOSC)
      2. 7.9.2 Low Frequency Oscillator (LFOSC)
      3. 7.9.3 High Frequency Crystal/Clock
      4. 7.9.4 Low Frequency Crystal/Clock
    10. 7.10 Digital IO
      1. 7.10.1  Electrical Characteristics
      2. 7.10.2 Switching Characteristics
    11. 7.11 ADC
      1. 7.11.1 Electrical Characteristics
      2. 7.11.2 Switching Characteristics
      3. 7.11.3 Linearity Parameters
      4. 7.11.4 Typical Connection Diagram
    12. 7.12 Temperature Sensor
    13. 7.13 VREF
      1. 7.13.1 Voltage Characteristics
      2. 7.13.2 Electrical Characteristics
    14. 7.14 I2C
      1. 7.14.1 I2C Characteristics
      2. 7.14.2 I2C Filter
      3. 7.14.3 I2C Timing Diagram
    15. 7.15 SPI
      1. 7.15.1 SPI
      2. 7.15.2 SPI Timing Diagram
    16. 7.16 UART
    17. 7.17 TIMx
    18. 7.18 Emulation and Debug
      1. 7.18.1 SWD Timing
  9. 8 Detailed Description
    1. 8.1  Overview
    2. 8.2  CPU
    3. 8.3  Operating Modes
      1. 8.3.1 Functionality by Operating Mode (MSPM0H321x)
    4. 8.4  Power Management Unit (PMU)
    5. 8.5  Clock Module (CKM)
    6. 8.6  DMA_B
    7. 8.7  Events
    8. 8.8  Memory
      1. 8.8.1 Memory Organization
      2. 8.8.2 Peripheral File Map
      3. 8.8.3 Peripheral Interrupt Vector
    9. 8.9  Flash Memory
    10. 8.10 SRAM
    11. 8.11 GPIO
    12. 8.12 IOMUX
    13. 8.13 ADC
    14. 8.14 Temperature Sensor
    15. 8.15 VREF
    16. 8.16 Security
    17. 8.17 CRC
    18. 8.18 UART
    19. 8.19 SPI
    20. 8.20 I2C
    21. 8.21 Low-Frequency Sub System (LFSS)
    22. 8.22 RTC_B
    23. 8.23 IWDT_B
    24. 8.24 WWDT
    25. 8.25 Timers (TIMx)
    26. 8.26 Device Analog Connections
    27. 8.27 Input/Output Diagrams
    28. 8.28 Serial Wire Debug Interface
    29. 8.29 DEBUGSS
    30. 8.30 Device Factory Constants
    31. 8.31 Identification
  10. 9 Applications, Implementation, and Layout
    1. 9.1 Typical Application
      1. 9.1.1 Schematic
  11. 10Device and Documentation Support
    1. 10.1 Device Nomenclature
    2. 10.2 Tools and Software
    3. 10.3 Documentation Support
    4. 10.4 Support Resources
    5. 10.5 Trademarks
    6. 10.6 Electrostatic Discharge Caution
    7. 10.7 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

7.10.1  Electrical Characteristics

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VIH High level input voltage VDD≥4.5V 0.7*VDD VDD V
VIL Low level input voltage VDD≥4.5V -0.3 0.3*VDD V
VHYS Hysteresis 0.1*VDD V
Ilkg High-Z leakage current HSIO(1) VDD = 5.5V 0.79(4) uA
High-Z leakage current (all pins except PA1, PA28) SDIO(2)(3) VDD = 5.5V 0.42(4)
High-Z leakage current (PA1, PA28) SDIO(2)(3) VDD = 5.5V 2.0
RPU Pull up resistance VIN = VSS 40 kΩ
CI Input capacitance VDD = 5V 20 pF
VOH High level output voltage HSIO VDD≥4.5V, |IIO|,max=6mA VDD-0.4 V
High level output voltage SDIO VDD ≥ 4.5V, |IIO|,max = 3mA VDD-0.4
VOL Low level output voltage HSIO VDD≥4.5V, |IIO|,max=6mA 0.4 V
Low level output voltage SDIO VDD ≥ 4.5V,|IIO|,max = 3mA 0.4
(1) I/O Types: SDIO = Standard-Drive (8-MHz), HSIO = High-Speed (16-MHz)
(2) The leakage current is measured with VSS or VDD applied to the corresponding pin(s), unless otherwise noted.
(3) The leakage of the digital port pins is measured individually. The port pin is selected for input and the pullup/pulldown resistor is disabled.
(4) This value is for IOs not muxed with any analog inputs. If the SDIO is muxed with analog inputs then the leakage can be higher.