SLASFC5A September   2024  – October 2025 TAS2320

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Pin Configuration and Functions
  6. Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Timing Requirements
    7. 5.7 Timing Diagrams
    8. 5.8 Typical Characteristics
  7. Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Device Functional Modes
      1. 6.3.1 Operational Modes
        1. 6.3.1.1 Hardware Shutdown
        2. 6.3.1.2 Hardware Config Modes
        3. 6.3.1.3 Software Power Modes Control and Software Reset
        4. 6.3.1.4 Efficiency and power saving modes
          1. 6.3.1.4.1 Noise Gate
          2. 6.3.1.4.2 Music Efficiency Mode
      2. 6.3.2 Faults and Status
        1. 6.3.2.1 Interrupt generation and clearing
    4. 6.4 Feature Description
      1. 6.4.1 PurePath™ Console 3 Software
      2. 6.4.2 Playback Signal Path
        1. 6.4.2.1 Digital Volume Control and Amplifier Output Level
        2. 6.4.2.2 High Pass Filter
        3. 6.4.2.3 Class-D Amplifier
        4. 6.4.2.4 Supply Tracking Limiters with Brown Out Prevention
          1. 6.4.2.4.1 Voltage Limiter and Clipping protection
        5. 6.4.2.5 Tone Generator
      3. 6.4.3 Digital Audio Serial Interface
        1. 6.4.3.1 Digital Loopback
      4. 6.4.4 External Class-H Boost Controller
      5. 6.4.5 Supply Voltage Monitors
      6. 6.4.6 Thermal Protection
      7. 6.4.7 Clocks and PLL
        1. 6.4.7.1 Auto clock based wakeup and clock errors
      8. 6.4.8 Digital IO pins
    5. 6.5 Programming
      1. 6.5.1 I2C Control Interface
      2. 6.5.2 I2C Address Selection
      3. 6.5.3 General I2C Operation
      4. 6.5.4 I2C Single-Byte and Multiple-Byte Transfers
      5. 6.5.5 I2C Single-Byte Write
      6. 6.5.6 I2C Multiple-Byte Write
      7. 6.5.7 I2C Single-Byte Read
      8. 6.5.8 I2C Multiple-Byte Read
  8. Register Maps
    1. 7.1 PAGE 0 Registers
    2. 7.2 PAGE 1 Registers
    3. 7.3 PAGE 2 Registers
    4. 7.4 PAGE 4 Registers
    5. 7.5 PAGE 5 Registers
    6. 7.6 PAGE 6 Registers
    7. 7.7 PAGE 7 Registers
    8. 7.8 PAGE 8 Registers
    9. 7.9 BOOK100 PAGE9 Registers
  9. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Mono/Stereo Configuration
        2. 8.2.2.2 EMI Passive Devices
        3. 8.2.2.3 Miscellaneous Passive Devices
      3. 8.2.3 Application Performance Plots
    3. 8.3 What to Do and What Not to Do
    4. 8.4 Power Supply Recommendations
    5. 8.5 Layout
      1. 8.5.1 Layout Guidelines
      2. 8.5.2 Layout Example
  10. Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Electrical Characteristics

TA = 25°C, PVDD = 12V, VDD = 1.8V, IOVDD = 1.8V, RL = 8Ω + 33µH, Fin = 1kHz, Fs = 48kHz, Gain = 21dBV, SDZ=1, Noise gate disabled, Class-D edge rate set to 2V/ns, I2C mode of operation, Measured filter free with an Audio Precision using 22Hz to 20kHz un-weighted bandwidth (unless otherwise noted).(1)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
AMPLIFIER PERFORMANCE
POUT_EXT_PVDD Maximum Output Power - 1% THD+N RL = 8 Ω + 33 µH 8.3 W
RL = 4 Ω + 33 µH 14.6 W
RL = 8 Ω + 33 µH, PVDD = 15V  11.2 W
RL = 4 Ω + 33 µH, PVDD = 15V 19 W
POUT_EXT_PVDD Maximum Output Power - 10% THD+N RL = 8 Ω + 33 µH 10.3 W
RL = 4 Ω + 33 µH 18.0 W
ηSYSTEM__EXT_1W System Efficiency at POUT = 1.0W RL = 8 Ω + 33 µH 88.5 %
RL = 4 Ω + 33 µH 84.3 %
ηSYSTEM_EXT_MAX_POUT System Efficiency at 1% THD+N power Level RL = 8 Ω + 33 µH 93.2 %
RL = 4 Ω + 33 µH 88.5 %
VN_EXT Idle channel Noise A-Weighted, Gain = 21dBV (Speaker Mode), DAC-Running 14.2 µV
DNR_EXT Dynamic Range A-Weighted, -60 dBFS Method, RL = 8 Ω + 33 µH 114.4 dB
THD+N_EXT Total Harmonic distortion + Noise POUT = 1 W, RL = 8 Ω + 33 µH 0.003 %
POUT = 1 W, RL = 4 Ω + 33 µH 0.004 %
KCP_EXT Click and pop performance All dynamic power up/downs of audio channel except for faults. Includes In/Out of Mute, Power Up and power Down, Noise Gate mode entry and Exit. Measured at Peak A-weighted Voltage. RL = 8 Ω + 33 µH, Input = Digital Silience –68 dBV
VOS_EXT Output Offset Voltage Idle channel –1 1 mV
PSRRPVDD_EXT PVDD power-supply rejection ratio PVDD + 200 mVpp, fripple = 217 Hz 119 dB
PVDD + 200 mVpp, fripple = 1 kHz 115 dB
PVDD + 200 mVpp, fripple = 20 kHz 91 dB
PSRRVBAT_EXT VBAT power-supply rejection ratio VBAT + 200 mVpp, fripple = 217 Hz 118 dB
VBAT + 200 mVpp, fripple = 1 kHz 116 dB
VBAT + 200 mVpp, fripple = 20 kHz 102 dB
PSRRVDD_EXT VDD power-supply rejection ratio VDD + 200 mVpp, fripple = 217 Hz 113 dB
VDD + 200 mVpp, fripple = 1 kHz 113 dB
VDD + 200 mVpp, fripple = 20 kHz 91 dB
TDM Serial Port
PCM Sample Rates and FSYNC Input Frequency 16 192 kHz
SBCLK Input Frequency I2S/TDM Operation 0.512 24.57 MHz
SBCLK Maximum Input Jitter RMS Jitter below 40 kHz that can be tolerated without performance degradation 0.5 ns
RMS Jitter above 40 kHz that can be tolerated without performance degradation 5 ns
SBCLK Cycles per FSYNC in I2S and TDM Modes Values: 64, 96, 128, 192, 256, 384 and 512 64 512 Cycles
PCM Playback Characteristics to fs ≤ 48 kHz
Fs Sample Rates 16 48 kHz
Audio Channel Passband LPF Corner Ripple < pass-band ripple 0.454 fs
Audio Channel Passband Ripple 20 Hz to LPF cutoff ± 0.1 dB
Audio Channel Stop Band Attenuation ≥ 0.55 fs 60 dB
≥ 1 fs 65 dB
Audio Channel Group Delay Fin = 1kHz, Lowest latency mode (Y-bridge, Noise gate disabled)  8.5 1/fs
Fin = 1kHz, Class-H disabled 16.5 1/fs
DC to 20kHz, Lowest latency mode (HPF bypassed, Y-bridge, Noise gate disabled) 13 1/fs
DC to 20kHz, HPF bypassed 21 1/fs
PCM Playback Characteristics to fs > 48 kHz
Fs Sample Rates 88.2 192 kHz
Audio Channel Passband LPF Corner fs = 96 kHz 0.469 fs
fs = 192 kHz 0.234 fs
Audio Channel Passband Ripple 20 Hz to LPF cutoff ± 0.2 dB
Audio Channel Stop Band Attenuation fs = 96 kHz, fin ≥ 0.55 fs 60 dB
fs = 96 kHz, fin ≥ 1 fs 65 dB
fs = 192 kHz, 0.55 fs ≥ fin ≥ 0.275 fs 60 dB
Audio Channel Group Delay Fin = 1kHz, Fs = 96kHz, Lowest latency mode (Y-bridge, Noise gate disabled)  11 1/fs
Fin = 1kHz, Fs = 96kHz, Class-H disabled 6.7 1/fs
DC to 20kHz, Fs = 96kHz, Lowest latency mode (HPF bypassed, Y-bridge, Noise gate disabled) 11.5 1/fs
DC to 40kHz, Fs=96kHz, HPF bypassed 28.6 1/fs
Protection Circuits
Thermal shutdown temperature 140 °C
Thermal shutdown retry time 1.5 s
VBAT undervoltage lockout threshold (UVLO) UVLO is asserted 1.9 V
UVLO is released 2.3 V
VDD undervoltage lockout threshold (UVLO) UVLO is asserted 1.4 V
UVLO is released 1.6 V
PVDD undervoltage lockout threshold (UVLO) UVLO is asserted 2.6 V
UVLO is released 2.8 V
PVDD overvoltage lockout threshold (OVLO) OVLO is asserted, OVLO protection enabled.  16 V
Output Short circuit protection Output to Output, Output to GND, Output to PVDD, Output to VBAT,  H-bridge mode 5.3 A
Power up/down Time
TSTDBY Turn ON time from SDZ Asserted to device ready for i2c Command 300 us
TACTIVE Turn ON time from release of Software Shutdown to Amplifier output Active Volume ramping disabled 1.6 ms
Volume ramping enabled 3.9 ms
TTURNOFF Turn OFF time from assertion of Software Shutdown to Amplifier output Hi-Z Volume ramping disabled 0.2 ms
Volume ramping enabled 13.9 ms
Current Consumption
IQ_HW_SD Current consumption in Hardware Shutdown PVDD, SDZ=0 0.1 uA
VBAT, SDZ=0 0.1 uA
VDD, SDZ=0 0.2 uA
IOVDD, SDZ=0 0.1 uA
IQ_SW_SD Current consumption in Software Shutdown PVDD, All clocks Stopped 0.1 uA
VBAT, All clocks Stopped 0.1 uA
VDD, All clocks Stopped 12 uA
IOVDD, All clocks Stopped 0.1 uA
IQ_NG Current consumption in Idle channel  PVDD, POUT = 0, Noise gate enabled 0.1 mA
VBAT, POUT = 0, Noise gate enabled 0.15 mA
VDD, POUT = 0, Noise gate enabled 2.2 mA
IOVDD, POUT = 0, Noise gate enabled 0.1 mA
Total Power, POUT = 0, Noise gate enabled 5.3 mW
IQ_IDLE Current consumption in Idle channel PVDD, POUT = 0, Noise gate disabled 0.2 mA
VBAT, POUT = 0, Noise gate disabled 0.5 mA
VDD, POUT = 0, Noise gate disabled 6 mA
IOVDD, POUT = 0, Noise gate disabled 0.1 mA
Total Power, POUT = 0, Noise gate disabled 14.7 mW
DIGITAL IOs
VIH High-level digital input logic voltage threshold All digital pins  0.7 x IOVDD V
VIL Low-level digital input logic voltage threshold All digital pins 0.3 x IOVDD V
VOH High-level digital output voltage All digital pins except SDA, SCL and IRQZ; IOH = 100µA IOVDD - 0.2 V V
VOL Low-level digital output voltage All digital pins except SDA, SCL and IRQZ; IOL = -100µA 0.2 V
VOL(I2C) Low-level digital output voltage SDA and SCL; IOL = -1mA 0.2 x IOVDD V
VOL(IRQZ) Low-level digital output voltage for open drain output IRQZ pin; IOL = -1mA 0.2 V
IIH(1) Input logic-high leakage for digital inputs All digital pins; Input = IOVDD. -1 1 µA
IIL(1) Input logic-low leakage for digital inputs All digital pins; Input = GND -1 1 µA
CIN Input capacitance for digital inputs All digital pins 5 pF
RPD Pull down resistance for digital input/IO pins when asserted on All digital pins. Pull down resistance option enabled 18 kΩ
Errata: Additional 2mA to 3mA current consumption expected if IRQZ signal is pulled high. Read more details in section "what to do and what not to do".