SLUSFM0 May   2025 TPS4816-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Charge Pump and Gate Driver output (VS, GATE, BST, SRC)
      2. 8.3.2 Capacitive Load Driving
        1. 8.3.2.1 Using Bypass FET (G drive) for Load Capacitor Charging
        2. 8.3.2.2 Using Main FET's (GATE drive) Gate Slew Rate Control
      3. 8.3.3 Overcurrent and Short-Circuit Protection
        1. 8.3.3.1 I2t Based Overcurrent Protection
          1. 8.3.3.1.1 I2t based Overcurrent Protection with Auto-Retry
          2. 8.3.3.1.2 I2t based Overcurrent Protection with Latch-Off
        2. 8.3.3.2 Short-Circuit Protection
      4. 8.3.4 Analog Current Monitor Output (IMON)
      5. 8.3.5 NTC based Temperature Sensing (TMP) and Analog Monitor Output (ITMPO)
      6. 8.3.6 Fault Indication and Diagnosis (FLT)
      7. 8.3.7 Reverse Polarity Protection
      8. 8.3.8 Undervoltage (UVLO) and Overvoltage (OV) Protection
      9. 8.3.9 TPS48161-Q1 as a Simple Gate Driver
    4. 8.4 Device Functional Modes
      1. 8.4.1 Power Down
      2. 8.4.2 Shutdown Mode
      3. 8.4.3 Active Mode (AM)
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application: Driving Capacitve Load
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Receiving Notification of Documentation Updates
    2. 10.2 Support Resources
    3. 10.3 Trademarks
    4. 10.4 Electrostatic Discharge Caution
    5. 10.5 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

8.1 Overview

TPS4816-Q1 is a family of low IQ smart high side drivers with protection and diagnostics. The TPS4816-Q1 has wide operating voltage range of 3.5-V to 95-V, 100-V absmax the device is suitable for 12 V, 24 V and 48 V automotive system designs.

TPS4816-Q1 has two integrated gate drives with 0.5-A peak source/ 2-A sink gate driver to drive FETs in main path and 100-μA src/0.39-A sink capacity for the bypass or pre-charge path. The strong gate drive (GATE) enables power switching using parallel FETs in high current system designs where INP pin can be used as the GATE control input.

The TPS4816-Q1 integrates a pre-charge driver (G) with control input (INP_G). This feature enables system designs that need to drive large capacitive loads by pre-charging first and then turning ON the main power FETs.

The device has accurate current sensing (±2 % at 30-mV VSNS) output (IMON) and bi-directional current indication output (I_DIR) enabling systems for energy management. The device has integrated accurate and adjustable I2t based overcurrent and short circuit protection (±5 %) by using an external RSNS resistor. Auto-retry and latch-off fault behavior can be configured.

TPS4816-Q1 indicate fault on open drain FLT output during overcurrent, short circuit, charge pump under voltage and input overvoltage conditions.

TPS4816-Q1 has integrated reverse polarity protection down to –65 V and do not need any external components to protect the ICs during an input reverse polarity fault.

The device features NTC based temperature sensing (TMP) and monitor output (ITMPO) output to sense overtemperature of external FETs enabling robust thermal system designs.

The TPS4816-Q1 is available in a 23-pin QFN package.