SLUSFM0 May   2025 TPS4816-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Charge Pump and Gate Driver output (VS, GATE, BST, SRC)
      2. 8.3.2 Capacitive Load Driving
        1. 8.3.2.1 Using Bypass FET (G drive) for Load Capacitor Charging
        2. 8.3.2.2 Using Main FET's (GATE drive) Gate Slew Rate Control
      3. 8.3.3 Overcurrent and Short-Circuit Protection
        1. 8.3.3.1 I2t Based Overcurrent Protection
          1. 8.3.3.1.1 I2t based Overcurrent Protection with Auto-Retry
          2. 8.3.3.1.2 I2t based Overcurrent Protection with Latch-Off
        2. 8.3.3.2 Short-Circuit Protection
      4. 8.3.4 Analog Current Monitor Output (IMON)
      5. 8.3.5 NTC based Temperature Sensing (TMP) and Analog Monitor Output (ITMPO)
      6. 8.3.6 Fault Indication and Diagnosis (FLT)
      7. 8.3.7 Reverse Polarity Protection
      8. 8.3.8 Undervoltage (UVLO) and Overvoltage (OV) Protection
      9. 8.3.9 TPS48161-Q1 as a Simple Gate Driver
    4. 8.4 Device Functional Modes
      1. 8.4.1 Power Down
      2. 8.4.2 Shutdown Mode
      3. 8.4.3 Active Mode (AM)
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application: Driving Capacitve Load
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Receiving Notification of Documentation Updates
    2. 10.2 Support Resources
    3. 10.3 Trademarks
    4. 10.4 Electrostatic Discharge Caution
    5. 10.5 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

6.4 Thermal Information

THERMAL METRIC(1) TPS4816x-Q1 UNIT
RGE (VQFN)
23 PINS
RθJA Junction-to-ambient thermal resistance 43 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 38.3 °C/W
RθJB Junction-to-board thermal resistance 20.8 °C/W
ΨJT Junction-to-top characterization parameter 0.8 °C/W
ΨJB Junction-to-board characterization parameter 20.7 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.