SLUSFM0 May   2025 TPS4816-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Charge Pump and Gate Driver output (VS, GATE, BST, SRC)
      2. 8.3.2 Capacitive Load Driving
        1. 8.3.2.1 Using Bypass FET (G drive) for Load Capacitor Charging
        2. 8.3.2.2 Using Main FET's (GATE drive) Gate Slew Rate Control
      3. 8.3.3 Overcurrent and Short-Circuit Protection
        1. 8.3.3.1 I2t Based Overcurrent Protection
          1. 8.3.3.1.1 I2t based Overcurrent Protection with Auto-Retry
          2. 8.3.3.1.2 I2t based Overcurrent Protection with Latch-Off
        2. 8.3.3.2 Short-Circuit Protection
      4. 8.3.4 Analog Current Monitor Output (IMON)
      5. 8.3.5 NTC based Temperature Sensing (TMP) and Analog Monitor Output (ITMPO)
      6. 8.3.6 Fault Indication and Diagnosis (FLT)
      7. 8.3.7 Reverse Polarity Protection
      8. 8.3.8 Undervoltage (UVLO) and Overvoltage (OV) Protection
      9. 8.3.9 TPS48161-Q1 as a Simple Gate Driver
    4. 8.4 Device Functional Modes
      1. 8.4.1 Power Down
      2. 8.4.2 Shutdown Mode
      3. 8.4.3 Active Mode (AM)
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application: Driving Capacitve Load
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Receiving Notification of Documentation Updates
    2. 10.2 Support Resources
    3. 10.3 Trademarks
    4. 10.4 Electrostatic Discharge Caution
    5. 10.5 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

3 Description

TPS4816-Q1 is a family of low IQ smart high side drivers with protection and diagnostics. With wide operating voltage range of 3.5V to 95V, (100V absolute-maximum rating) the device is suitable for 12V, 24V, and 48V automotive system designs.

The device has a strong 0.5A peak source and 2A peak sink GATE driver that enables power switching using parallel FETs in high current system designs. Use INP as the gate driver control input. MOSFET slew rate control (ON and OFF) is possible by placing external R-C components.

It also integrates a pre-charge driver (G) with control input (INP_G). This features enables designs that must drive large capacitive loads. In shutdown mode, the controller draws a total shutdown current of 1µA at 48V supply input.

The device has accurate bi-directional current sensing (±2%) output (IMON, I_DIR) with adjustable I2t based overcurrent and short circuit protection (±5%) using an external RSNS resistor and FLT indication. Auto-retry and latch-off fault behavior can be configured. The device also has NTC based temperature sensing (TMP) and monitoring output (ITMPO) output for overtemperature detection of external FETs.

TPS4816-Q1 is available in a 23-pin VQFN package.

Package Information
PART NUMBERPACKAGE(1)PACKAGE SIZE(2)
TPS48160-Q1, TPS48161-Q1RGE (VQFN, 23)4mm × 4mm
(1) For all available packages, see Section 12.
(2) The package size (length × width) is a nominal value and includes pins, where applicable.
TPS4816-Q1 TPS48160-Q1 Application Circuit Driving Back to Back FETsTPS48160-Q1 Application Circuit Driving Back to Back FETs
TPS4816-Q1 TPS48160-Q1 Application Circuit With Bulk Capacitor ChargingTPS48160-Q1 Application Circuit With Bulk Capacitor Charging