SLUSG59 February   2026 BQ27Z855

ADVANCE INFORMATION  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Pin Configurations and Functions
  6. Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Supply Current
    5. 5.5  1.8V LDO Regulator (REG18)
    6. 5.6  Low Frequency Oscillator (LFO)
    7. 5.7  High Frequency Oscillator (HFO)
    8. 5.8  PACK Clamp (PACK_CLAMP)
    9. 5.9  Analog-to-Digital Converter (VADC)
    10. 5.10 Coulomb Counter (CCADC)
    11. 5.11 Coulomb Counter Digital Filter (CC1)
    12. 5.12 Current Measurement Digital Filter (CC2)
    13. 5.13 Charge Current Measurement Digital Filter (CC3)
    14. 5.14 Wake-up Comparator (I-WAKE)
    15. 5.15 Internal Temperature Sensor (INT_TEMP)
    16. 5.16 Thermistor Measurement Support
    17. 5.17 Hardware-based Protection (SCOMP) Thresholds (OVP, UVP, OCC, OCD, SCD)
    18. 5.18 Hardware-based Protections (SCOMP) Timing (OVP, UVP, OCC, OCD, SCD)
    19. 5.19 Current Limiter
    20. 5.20 CHG, DSG NFET Drivers
    21. 5.21 Zero-volt Charging (ZVCHG)
    22. 5.22 General Purpose Input-Outputs (INT)
    23. 5.23 I2C Interface I/O (SDA, SCL)
    24. 5.24 I2C Interface Timing
  7. Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1  BQ27Z855 Processor
      2. 6.3.2  Battery Parameter Measurements
        1. 6.3.2.1 Analog-to-Digital Converter (VADC)
        2. 6.3.2.2 VADC Multiplexer
        3. 6.3.2.3 Coulomb Counter (CCADC) and Digital Filter (CC1)
        4. 6.3.2.4 Internal Temperature Sensor (INT_TEMP)
        5. 6.3.2.5 External Temperature Sensor Support
      3. 6.3.3  Power Supply Control
      4. 6.3.4  ENAB Pin
      5. 6.3.5  I2C Bus Communication Interface
      6. 6.3.6  Low Frequency Oscillator (LFO)
      7. 6.3.7  High Frequency Oscillator (HFO)
      8. 6.3.8  Real Time Clock (RTC)
      9. 6.3.9  1.8V Low Dropout Regulator (REG18)
      10. 6.3.10 FET Drivers (CHG, DSG)
        1. 6.3.10.1 Charge (CHG) FET Driver
        2. 6.3.10.2 Discharge (DSG) FET Driver
      11. 6.3.11 Zero-volt Charging (ZVCHG)
      12. 6.3.12 Integrated Protections
        1. 6.3.12.1 Hardware-based Protections
          1. 6.3.12.1.1 Overvoltage Protection (OVP)
          2. 6.3.12.1.2 Undervoltage Protection (UVP)
          3. 6.3.12.1.3 Overcurrent in Charge Protection (OCC)
          4. 6.3.12.1.4 Overcurrent in Discharge Protection (OCD)
          5. 6.3.12.1.5 Short Circuit Current in Discharge Protection (SCD)
          6. 6.3.12.1.6 Wake-up Comparator (I-WAKE)
        2. 6.3.12.2 Firmware-based Protections
          1. 6.3.12.2.1 Primary Level Protection Features
          2. 6.3.12.2.2 Secondary Level Protection Features
      13. 6.3.13 Gas Gauging
      14. 6.3.14 Advanced Battery Algorithms
        1. 6.3.14.1 Si-anode Chemistry Support
        2. 6.3.14.2 Internal Short Indication (ISI)
        3. 6.3.14.3 Battery Swelling Detection (BSD)
      15. 6.3.15 Integrated Current Limiter and Charge Control Features
        1. 6.3.15.1 Integrated Current Limiter
          1. 6.3.15.1.1 CHG FET State Machine
          2. 6.3.15.1.2 Linear Mode
            1. 6.3.15.1.2.1 Battery Charging Process
            2. 6.3.15.1.2.2 Zero-volt Charge (ZVCHG)
            3. 6.3.15.1.2.3 Precharge (PCHG)
            4. 6.3.15.1.2.4 Fast Charge (CC)
            5. 6.3.15.1.2.5 Taper-charge (CV)
            6. 6.3.15.1.2.6 Charge Termination (VCT)
            7. 6.3.15.1.2.7 Step-charging Profile Support
          3. 6.3.15.1.3 MINSYS Mode
          4. 6.3.15.1.4 Battery Supplement Mode
        2. 6.3.15.2 Interaction with a Smart Charger
      16. 6.3.16 Ideal Diode Mode
      17. 6.3.17 Lifetime Data Logging Features
      18. 6.3.18 Authentication
        1. 6.3.18.1 ECC ECDSA Authentication
        2. 6.3.18.2 SHA-256 Authentication
      19. 6.3.19 Over the Air (OTA) Field Updater
      20. 6.3.20 Configuration
        1. 6.3.20.1 Cell Voltage Measurements
        2. 6.3.20.2 Coulomb Counting
        3. 6.3.20.3 Temperature Measurements
    4. 6.4 Device Functional Modes
  8. Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application Schematics
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 High-Current Path
          1. 7.2.2.1.1 Protection FETs
          2. 7.2.2.1.2 Battery Cell Connections
          3. 7.2.2.1.3 Sense Resistor
          4. 7.2.2.1.4 ESD Mitigation
        2. 7.2.2.2 Gas Gauge Circuit
          1. 7.2.2.2.1 Cell Voltage Measurement Interface
          2. 7.2.2.2.2 Coulomb Counter Interface
          3. 7.2.2.2.3 Temperature Measurement
          4. 7.2.2.2.4 1.8V Low Dropout Regulator (REG18)
          5. 7.2.2.2.5 I2C Communication (SDA, SCL)
          6. 7.2.2.2.6 Interrupt to Host Interface (INT)
        3. 7.2.2.3 Current Limiter Circuit
          1. 7.2.2.3.1 Protection FETs and Compatibility with BQ27Z855
          2. 7.2.2.3.2 CP Control Logic and Capacitor
          3. 7.2.2.3.3 Voltage-based Feedback Interface
          4. 7.2.2.3.4 Current-based Feedback Interface
            1. 7.2.2.3.4.1 Sense Resistor Impact on Current-based Feedback
            2. 7.2.2.3.4.2 Sense Resistor Impact on CHG FET State Transitions
          5. 7.2.2.3.5 BAT-PACK Dedicated Voltage Comparator (DCOMP)
            1. 7.2.2.3.5.1 Impact of Sense Resistor Configuration on DCOMP Sensing
          6. 7.2.2.3.6 System-level Recommendations
        4. 7.2.2.4 Co-design with BQ27Z746 and BQ27Z758
          1. 7.2.2.4.1 Footprint Compatibility and Equivalent Pins
          2. 7.2.2.4.2 Co-layout Example
  9. Power Supply Recommendations
  10. Layout
    1. 9.1 Layout Guidelines
  11. 10Device and Documentation Support
    1. 10.1 Third-Party Products Disclaimer
    2. 10.2 Documentation Support
      1. 10.2.1 Related Documentation
    3. 10.3 Trademarks
    4. 10.4 Electrostatic Discharge Caution
    5. 10.5 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information
    1.     PACKAGE OPTION ADDENDUM
    2. 12.1 Tape and Reel Information
    3. 12.2 Mechanical Data

I2C Interface Timing

Typical values stated where TA = 25℃ and VBAT = 3.8V, MIN/MAX values stated where TA = -40℃ to 85℃ and VBAT = 2.0V to 5.0V (unless otherwise noted)
PARAMETERTEST CONDITIONSMINNOMMAXUNIT
I2C 100kHz
fSCL(1)Clock frequency100kHz
tHD:STA(1)START condition hold time4µs
tLOW(1)Low period of SCL clock4.7µs
tHIGH(1)High period of SCL clock4µs
tSU:STA(1)Setup time for repeated START4.7µs
tHD:DAT(1) Data in hold time0µs
tSU:DAT(1) Data in setup time250ns
Data out setup time250
tr(1)(2)SDA and SCL rise time30% to 70% of VDDIO1000ns
tF(1)(2)SDA and SCL fall time30% to 70% of VDDIO300ns
tSU:STO(1)STOP condition setup time4µs
tBUF(1)Bus free time between STOP and START4.7µs
CD Capacitive load for each bus line 400 pF
I2C 400kHz
fSCL(1)Clock frequency400kHz
tHD:STA(1) START condition hold time0.6µs
tLOW(1)Low period of SCL clock1.3µs
tHIGH(1) High period of SCL clock0.6µs
tSU:STA(1)Setup time for repeated START0.6µs
tHD:DAT(1) Data in hold time0µs
tSU:DAT(1) Data in setup time100ns
Data out setup time100
tr(1)(2)SDA and SCL rise time30% to 70% of VDDIO20300ns
tF(1)(2)SDA and SCL fall time30% to 70% of VDDIO20 × (VDDIO/5.5)300ns
tSU:STO(1)STOP condition setup time0.6µs
tBUF(1)Bus free time between STOP and START1.3µs
CD Capacitive load for each bus line 400 pF
I2C 1MHz
fSCL(1) Clock frequency1000kHz
tHD:STA(1) START condition hold time0.26µs
tLOW(1) Low period of SCL clock0.5µs
tHIGH(1) High period of SCL clock0.26µs
tSU:STA(1)Setup time for repeated START0.26µs
tHD:DAT(1) Data in hold time0µs
tSU:DAT(1) Data in setup time50ns
Data out setup time50
tr(1)(2)SDA and SCL rise time30% to 70% of VDDIO120ns
tF(1)(2)SDA and SCL fall time30% to 70% of VDDIO20 × (VDDIO/5.5)120ns
tSU:STO(1)STOP condition setup time0.26µs
tBUF(1) Bus free time between STOP and START0.5µs
CD Capacitive load for each bus line 100 pF
Specified by Characterization. Not production tested.
VDDIO = 1.2V
BQ27Z855 I2C Timing
                Diagram Figure 5-1 I2C Timing Diagram