SLUUD68 December 2024
Wide bandgap SiC-based power modules become popular in power electronics because of their excellent conduction and switching performance. Compact driver board UCC2189X5YQEVM-096 supports SiC modules by reducing parasitics, minimizing switching loss, and providing full required protection and diagnostics features. For the full elctrical specifications table, refer to the UCC2189X5Y-Q1 datasheet
| Parameter | Test Conditions | Min | Nom | Max | Unit | |
|---|---|---|---|---|---|---|
SUPPLY VOLTAGES AND CURRENTS | ||||||
| Vcc | VCC supply voltage | 5.0 | 5.5 | V | ||
| Vdd2u, Vdd2l | VDD supply voltages | From transformer and LDO | 20 | V | ||
| Vee2u, Vee2l | VEE supply voltages | From transformer | -5.5 | V | ||
| DRIVE CURRENT | ||||||
| Ioutp | Peak source/sink current for OUTP | Cload = 100pF | 2.8 | A | ||
| Ioutn | Peak source/sink current for OUTN | Cload = 100pF | 2.8 | A | ||
| INPUT/OUTPUT SIGNALS | ||||||
| Vinh | Input high threshold | 0.7 x VCC | V | |||
| Vinl | Input low threshold | 0.3 x VCC | V | |||
| Vinhys | Input threshold hysteresis | 0.15 x VCC | V | |||
| TIMING PARAMETERS | ||||||
| TPr | OUTP rise time | Cload = 1 nF | 11 | ns | ||
TPf | OUTP fall time | Cload = 1 nF | 10 | ns | ||
TNr | OUTN rise time | Cload = 1 nF | 9 | ns | ||
TNf | OUTN fall time | Cload = 1 nF | 5 | ns | ||
| Tpd | Propagation delay | Cload = 1 nF | 65 | ns | ||
PROTECTION - DESAT, ACTIVE SHORT CIRCUIT, EXTERNAL MILLER CLAMP | ||||||
Ichg | Blanking capacitor charging current | Vdesat = 2.0V | 2000 | uA | ||
Tdesatleb | Leading edge blank time | 200 | ns | |||
Tdesatfil | DESAT deglitch filter | 125 | ns | |||
Vascl | ASC input low threshold referenced to COM | 1.45 | V | |||
Vasch | ASC input high threshold referenced to COM | 2.7 | V | |||
Tascfil | ASC deglitch filter time | 400 | 700 | ns | ||
Vclmpth | Miller Clamp threshold | Reference to VEE | 1.7 | 2 | 2.3 | V |
Iclmpe | Miller Clamp current | Cclmpe = 10nF | 0.5 | A | ||
| ISOLATION | ||||||
| Viso | Withstand isolation voltage for gate driver | Reinforced, 60s | 5 | kVrms | ||
| Cio | Barrier capacitance for gate driver | 1.2 | pF | |||
| Tj | Operating Junction Temperature for gate driver | -40 | 150 | °C | ||