SLVSHK9 December   2024 TPS546B26

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1  D-CAP4 Control
        1. 6.3.1.1 Loop Compensation
      2. 6.3.2  Internal VCC LDO and Using an External Bias on VCC Pin and VDRV Pin
      3. 6.3.3  Input Undervoltage Lockout (UVLO)
        1. 6.3.3.1 Fixed VCC_OK UVLO
        2. 6.3.3.2 Fixed VDRV UVLO
        3. 6.3.3.3 Programmable PVIN UVLO
        4. 6.3.3.4 Control (CNTL) Enable
      4. 6.3.4  Differential Remote Sense and Internal, External Feedback Divider
      5. 6.3.5  Set the Output Voltage and VORST#
      6. 6.3.6  Start-Up and Shutdown
      7. 6.3.7  Dynamic Voltage Slew Rate
      8. 6.3.8  Set Switching Frequency
      9. 6.3.9  Switching Node (SW)
      10. 6.3.10 Overcurrent Limit and Low-side Current Sense
      11. 6.3.11 Negative Overcurrent Limit
      12. 6.3.12 Zero-Crossing Detection
      13. 6.3.13 Input Overvoltage Protection
      14. 6.3.14 Output Overvoltage and Undervoltage Protection
      15. 6.3.15 Overtemperature Protection
      16. 6.3.16 Telemetry
    4. 6.4 Device Functional Modes
      1. 6.4.1 Forced Continuous-Conduction Mode
      2. 6.4.2 DCM Light Load Operation
      3. 6.4.3 Powering the Device From a 12V Bus
      4. 6.4.4 Powering the Device From a Split-rail Configuration
      5. 6.4.5 Pin-Strapping
        1. 6.4.5.1 Programming MSEL1
        2. 6.4.5.2 Programming PMB_ADDR
        3. 6.4.5.3 Programming MSEL2
        4. 6.4.5.4 Programming VSEL\FB
    5. 6.5 Programming
      1. 6.5.1 Supported PMBus® Commands
  8. 7 Register Maps
    1. 7.1  Conventions for Documenting Block Commands
    2. 7.2  (01h) OPERATION
    3. 7.3  (02h) ON_OFF_CONFIG
    4. 7.4  (03h) CLEAR_FAULTS
    5. 7.5  (0Eh) PASSKEY
    6. 7.6  (10h) WRITE_PROTECT
    7. 7.7  (15h) STORE_USER_ALL
    8. 7.8  (16h) RESTORE_USER_ALL
    9. 7.9  (19h) CAPABILITY
    10. 7.10 (1Bh) SMBALERT_MASK
    11. 7.11 (20h) VOUT_MODE
    12. 7.12 (21h) VOUT_COMMAND
    13. 7.13 (22h) VOUT_TRIM
    14. 7.14 (24h) VOUT_MAX
    15. 7.15 (25h) VOUT_MARGIN_HIGH
    16. 7.16 (26h) VOUT_MARGIN_LOW
    17. 7.17 (27h) VOUT_TRANSITION_RATE
    18. 7.18 (29h) VOUT_SCALE_LOOP
    19. 7.19 (2Ah) VOUT_SCALE_MONITOR
    20. 7.20 (2Bh) VOUT_MIN
    21. 7.21 (33h) FREQUENCY_SWITCH
    22. 7.22 (35h) VIN_ON
    23. 7.23 (36h) VIN_OFF
    24. 7.24 (39h) IOUT_CAL_OFFSET
    25. 7.25 (40h) VOUT_OV_FAULT_LIMIT
    26. 7.26 (41h) VOUT_OV_FAULT_RESPONSE
    27. 7.27 (42h) VOUT_OV_WARN_LIMIT
    28. 7.28 (43h) VOUT_UV_WARN_LIMIT
    29. 7.29 (44h) VOUT_UV_FAULT_LIMIT
    30. 7.30 (45h) VOUT_UV_FAULT_RESPONSE
    31. 7.31 (46h) IOUT_OC_FAULT_LIMIT
    32. 7.32 (48h) IOUT_OC_LV_FAULT_LIMIT
    33. 7.33 (49h) IOUT_OC_LV_FAULT_RESPONSE
    34. 7.34 (4Ah) IOUT_OC_WARN_LIMIT
    35. 7.35 (4Fh) OT_FAULT_LIMIT
    36. 7.36 (50h) OT_FAULT_RESPONSE
    37. 7.37 (51h) OT_WARN_LIMIT
    38. 7.38 (55h) VIN_OV_FAULT_LIMIT
    39. 7.39 (60h) TON_DELAY
    40. 7.40 (61h) TON_RISE
    41. 7.41 (64h) TOFF_DELAY
    42. 7.42 (65h) TOFF_FALL
    43. 7.43 (78h) STATUS_BYTE
    44. 7.44 (79h) STATUS_WORD
    45. 7.45 (7Ah) STATUS_VOUT
    46. 7.46 (7Bh) STATUS_IOUT
    47. 7.47 (7Ch) STATUS_INPUT
    48. 7.48 (7Dh) STATUS_TEMPERATURE
    49. 7.49 (7Eh) STATUS_CML
    50. 7.50 (7Fh) STATUS_OTHER
    51. 7.51 (80h) STATUS_MFR_SPECIFIC
    52. 7.52 (88h) READ_VIN
    53. 7.53 (8Bh) READ_VOUT
    54. 7.54 (8Ch) READ_IOUT
    55. 7.55 (8Dh) READ_TEMPERATURE_1
    56. 7.56 (98h) PMBUS_REVISION
    57. 7.57 (99h) MFR_ID
    58. 7.58 (9Ah) MFR_MODEL
    59. 7.59 (9Bh) MFR_REVISION
    60. 7.60 (ADh) IC_DEVICE_ID
    61. 7.61 (AEh) IC_DEVICE_REV
    62. 7.62 (D1h) SYS_CFG_USER1
    63. 7.63 (D3h) PMBUS_ADDR
    64. 7.64 (D4h) COMP
    65. 7.65 (D5h) VBOOT_OFFSET_1
    66. 7.66 (D8h) PIN_DETECT_OVERRIDE
    67. 7.67 (D9h) NVM_CHECKSUM
    68. 7.68 (DAh) READ_TELEMETRY
    69. 7.69 (DBh) STATUS_ALL
    70. 7.70 (DDh) EXT_WRITE_PROTECTION
    71. 7.71 (DEh) IMON_CAL
    72. 7.72 (FCh) FUSION_ID0
    73. 7.73 (FDh) FUSION_ID1
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Application
      2. 8.2.2 Design Requirements
      3. 8.2.3 Detailed Design Procedure
        1. 8.2.3.1 Input Capacitor Selection
        2. 8.2.3.2 Inductor Selection
        3. 8.2.3.3 Output Capacitor Selection
        4. 8.2.3.4 Compensation Selection
        5. 8.2.3.5 VCC and VRDV Bypass Capacitors
        6. 8.2.3.6 BOOT Capacitor Selection
        7. 8.2.3.7 VOSNS and GOSNS Capacitor Selection
        8. 8.2.3.8 PMBus Address Resistor Selection
      4. 8.2.4 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
        1. 8.4.2.1 Thermal Performance on EVM
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

7.15 (25h) VOUT_MARGIN_HIGH

CMD Address25h
Write Transaction:Write Word
Read Transaction:Read Word
Format:ULINEAR16, relative, per VOUT_MODE
Phased:No
NVM Back-up:EEPROM
Updates:On-the-fly

The VOUT_MARGIN_HIGH command loads the unit with the voltage to which the output is to be changed when the OPERATION command is set to “Margin High”. Because the Vout format is set to relative in the (20h) VOUT_MODE register – bit [7], the commanded Vout will increase by the multiplicative factor indicated in this command. This command also uses the LSB specified by (20h) VOUT_MODE. Output voltage transitions during margin operation occur at the slew rate defined by VOUT_TRANSITION_RATE.

When the MARGIN bits in the OPERATION command indicate “Margin High,” the output voltage is updated to the value of VOUT_MARGIN_HIGH + VOUT_TRIM.

Return to Supported PMBus Commands.

Figure 7-22 (25h) VOUT_MARGIN_HIGH Register Map
15141312111098
RWWWWRWRWRW
VOUT_MARGIN_HIGH (High Byte)
76543210
RWRWRWRWRWRWRWRW
VOUT_MARGIN_HIGH (Low Byte)
LEGEND: R/W = Read/Write; R = Read only
Table 7-9 Register Field Descriptions
BitFieldAccessResetDescription
15:11 Reserved R 0b
10:0VOUT_ MARGIN_HIGHRWNVMMargin High output voltage. ULINEAR16 relative per the setting of VOUT_ MODE

To optimize the number of EEPROM bits needed for this command, the bits in the above register do not have direct backup, but instead are correlated to an NVM backed bit called MRGN_HI_DFLT, that is used as below during EEPROM restore:

MARGIN_HI_DFLT VOUT_MARGIN_HIGH[10:0] % Margin
0b 528d 3.125
1b 536d 4.6875

The effect of this command is determined by the settings of the VOUT_MODE command. The table below also shows how the MRGN_HI_DFLT is determined for NVM storage.

VOUT_MARGIN_HIGH[10:0] % Margin MRGN_HI_DFLT
Greater than or equal to (decimal) Less than (decimal)
524 1.5625 0
524 532 3.125
532 540 4.6875 1
540 548 6.25
548 556 7.8125
556 564 9.375
564 572 10.9375
572 2048 12.5

The minimum and maximum valid data values for VOUT_MARGIN_HIGH follow the description in VOUT_COMMAND. That is, the total combined output voltage, including VOUT_MARGIN_HIGH and VOUT_TRIM, follow the values allowed by the current VOUT_MAX setting.

Attempts to write (25h) VOUT_MARGIN_HIGH to any value outside those specified as valid will be considered invalid/unsupported data and cause the device to respond by flagging the appropriate status bits and notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.