Through targeted transistor modifications in the LNA (low noise amplifier) and PA (power amplifier), the AWR2E44P and AWR2944P achieve a 2 to 3 dB gain in SNR. This improvement is crucial for high-accuracy detection and classification in complex driving environments. These targeted transistor enhancements improve F_t (transit frequency) and F_max (max oscillation frequency) of transistors. F_t is the frequency at which current gain approaches 1 or 0dB. Higher F_t supports faster clock speeds, essential for switching circuits, and improves noise figure, leading to enhanced front-end performance in mmWave applications. F_max is the frequency at which power gain approaches zero. Enhancing F_max improves transistor gain, significantly boosting power efficiency. With better F_t and F_max, TI is able to achieve better SNR without increasing the power consumption. Figure 3-2 shows how F_t and F_max are boosted on AWR2944P and AWR2E44P, up respectively +20% and +10% compared to AWR2944, which enables higher SNR. Figure 3-2 and Figure 3-4 shows enhancements achieved in output power and noise figure in AWR2944P at typical conditions. Thus, AWR2E44P and AWR2944P provide improved signal clarity, essential for accurate detection in high-noise environments with better SNR capabilities.

Figure 3-2 F_T and F_max enhancements on AWR2E44P and AWR2944P

Figure 3-3 Output power enhancements on AWR2944P

Figure 3-4 Noise figure enhancements on AWR2944P