STDA011 September   2025 UCC25661

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Introduction
  5. 2Benefits of GaN In LLC Resonant Converter
    1. 2.1 Higher Efficiency
    2. 2.2 Faster Switching Speeds
    3. 2.3 Reduced Parasitic Capacitances
    4. 2.4 Improved Power Density
    5. 2.5 High Thermal Conductivity
    6. 2.6 Lower Junction Temperatures
  6. 3LLC Resonant Converter
    1. 3.1 The Relationship Between Output Voltage (VOUT) and Switching Frequency (fS) in an LLC Resonant Controller
      1. 3.1.1 The LLC Charging Challenge
      2. 3.1.2 A Wide VIN/VOUT Capable LLC
  7. 4Practical Application of LLC Converters for a Battery Charger Leveraging GaN Switches
    1. 4.1 Requirements and Scope
    2. 4.2 Charging Curve for Lithium-Ion Battery
    3. 4.3 How to Support Wide VOUT Range in an LLC Design for Battery Chargers
    4. 4.4 The Prototype Hardware
  8. 5Summary

2.1 Higher Efficiency

For a given breakdown voltage and die size GaN FETs has lower conduction losses due to their significant lower RDS(on) compared to silicon MOSFETs. This is due to superior material properties in GaN. This leads to less power dissipation when current is flowing through the device, reducing overall heat generation. This is especially noticeable at high switching frequencies, which are typical in LLC resonant converters.

MOSFETs are also efficient but suffer from higher conduction losses as their RDS(on) increase faster with temperature and voltage.