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LM74610-Q1

ACTIVE

0.48-V to 42-V, zero IQ automotive ideal diode controller

LM74610-Q1

ACTIVE

Product details

Vin (max) (V) 42 Vin (min) (V) 0.48 FET External single FET Device type Ideal diode controller Number of channels 1 Rating Automotive Features Automotive load dump compatibility, Linear control, Reverse current blocking, Reverse polarity protection Iq (typ) (mA) 0 Iq (max) (mA) 0 IGate source (typ) (µA) 10 IGate source (max) (µA) 9.4 IGate sink (typ) (mA) 0.01 Operating temperature range (°C) -40 to 125 IReverse (typ) (µA) 110 VSense reverse (typ) (mV) 20 Design support EVM VGS (max) (V) 2.5 Product type Ideal diode controller
Vin (max) (V) 42 Vin (min) (V) 0.48 FET External single FET Device type Ideal diode controller Number of channels 1 Rating Automotive Features Automotive load dump compatibility, Linear control, Reverse current blocking, Reverse polarity protection Iq (typ) (mA) 0 Iq (max) (mA) 0 IGate source (typ) (µA) 10 IGate source (max) (µA) 9.4 IGate sink (typ) (mA) 0.01 Operating temperature range (°C) -40 to 125 IReverse (typ) (µA) 110 VSense reverse (typ) (mV) 20 Design support EVM VGS (max) (V) 2.5 Product type Ideal diode controller
VSSOP (DGK) 8 14.7 mm² (3 mm × 4.9 mm)
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Exceeds HBM ESD Classification Level 2
    • Device CDM ESD Classification Level C4B
  • Maximum reverse voltage of 45 V
  • No Positive Voltage limitation to Anode Terminal
  • Charge Pump Gate Driver for External N-Channel
    MOSFET
  • Lower Power Dissipation than Schottky
    Diode/PFET Solutions
  • Low Reverse Leakage Current
  • Zero IQ
  • Fast 2-µs Response to Reverse Polarity
  • –40°C to +125°C Operating Ambient Temperature
  • Can be Used in OR-ing Applications
  • Meets CISPR25 EMI Specification
  • Meets Automotive ISO7637 Transient
    Requirements with a Suitable TVS Diode
  • No Peak Current Limit
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Exceeds HBM ESD Classification Level 2
    • Device CDM ESD Classification Level C4B
  • Maximum reverse voltage of 45 V
  • No Positive Voltage limitation to Anode Terminal
  • Charge Pump Gate Driver for External N-Channel
    MOSFET
  • Lower Power Dissipation than Schottky
    Diode/PFET Solutions
  • Low Reverse Leakage Current
  • Zero IQ
  • Fast 2-µs Response to Reverse Polarity
  • –40°C to +125°C Operating Ambient Temperature
  • Can be Used in OR-ing Applications
  • Meets CISPR25 EMI Specification
  • Meets Automotive ISO7637 Transient
    Requirements with a Suitable TVS Diode
  • No Peak Current Limit

The LM74610-Q1 is a controller device that can be used with an N-Channel MOSFET in a reverse polarity protection circuitry. It is designed to drive an external MOSFET to emulate an ideal diode rectifier when connected in series with a power source. A unique advantage of this scheme is that it is not referenced to ground and thus has Zero Iq.

The LM74610-Q1 controller provides a gate drive for an external N-Channel MOSFET and a fast response internal comparator to discharge the MOSFET Gate in the event of reverse polarity. This fast pull-down feature limits the amount and duration of reverse current flow if opposite polarity is sensed. The device design also meets CISPR25 Class 5 EMI specifications and automotive ISO7637 transient requirements with a suitable TVS diode.

The LM74610-Q1 is a controller device that can be used with an N-Channel MOSFET in a reverse polarity protection circuitry. It is designed to drive an external MOSFET to emulate an ideal diode rectifier when connected in series with a power source. A unique advantage of this scheme is that it is not referenced to ground and thus has Zero Iq.

The LM74610-Q1 controller provides a gate drive for an external N-Channel MOSFET and a fast response internal comparator to discharge the MOSFET Gate in the event of reverse polarity. This fast pull-down feature limits the amount and duration of reverse current flow if opposite polarity is sensed. The device design also meets CISPR25 Class 5 EMI specifications and automotive ISO7637 transient requirements with a suitable TVS diode.

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Simulation model

LM74610-Q1 TINA-TI Transient Reference Design

SNOM610A (798 KB) - TINA-TI reference design
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LM74610-Q1 TINA-TI Transient Spice Model

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LM74610-Q1 Unencrypted PSpice Transient Model Package (Rev. C)

SNOM560C.ZIP (55 KB) - PSpice model
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