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CSD75208W1015

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-20-V, P channel NexFET™ power MOSFET, dual Common Source WLP 1 mm x 1.5 mm, 108 mOhm, gate ESD prot

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Data sheet

CSD75208W1015

ACTIVE
Data sheet Order now

Product details

VDS (V) -20 VGS (V) -6 Configuration Dual Common Source Rds(on) max at VGS=4.5 V (mOhms) 108 Rds(on) max at VGS=2.5 V (mOhms) 150 Rds(on) max at VGS=1.8 V (mOhms) 285 Id peak (Max) (A) -22 Id max cont (A) -1.6 QG typ (nC) 1.9 QGD typ (nC) 0.23 QGS typ (nC) 0.48 VGSTH typ (V) -0.8 Package (mm) WLP 1.0x1.5
VDS (V) -20 VGS (V) -6 Configuration Dual Common Source Rds(on) max at VGS=4.5 V (mOhms) 108 Rds(on) max at VGS=2.5 V (mOhms) 150 Rds(on) max at VGS=1.8 V (mOhms) 285 Id peak (Max) (A) -22 Id max cont (A) -1.6 QG typ (nC) 1.9 QGD typ (nC) 0.23 QGS typ (nC) 0.48 VGSTH typ (V) -0.8 Package (mm) WLP 1.0x1.5
DSBGA (YZC) 6 3 mm² 1.006 x 1.5
  • Dual P-Channel MOSFETs
  • Common Source Configuration
  • Small Footprint 1 mm × 1.5 mm
  • Gate-Source Voltage Clamp
  • Gate ESD Protection –3 kV
  • Pb Free
  • RoHS Compliant
  • Halogen Free
  • Dual P-Channel MOSFETs
  • Common Source Configuration
  • Small Footprint 1 mm × 1.5 mm
  • Gate-Source Voltage Clamp
  • Gate ESD Protection –3 kV
  • Pb Free
  • RoHS Compliant
  • Halogen Free

This device is designed to deliver the lowest on-resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on-resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.

This device is designed to deliver the lowest on-resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on-resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.
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Technical documentation

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Type Title Date
* Data sheet CSD75208W1015 Dual 20-V Common Source P-Channel NexFET Power MOSFET datasheet (Rev. A) PDF | HTML 16 May 2017
Application note Tips for Successfully Paralleling Power MOSFETs PDF | HTML 31 May 2022
More literature WCSP Handling Guide 07 Nov 2019
Application note AN-1112 DSBGA Wafer Level Chip Scale Package (Rev. AI) 14 Jun 2019
Technical article Understanding the benefits of “lead-free” power MOSFETs 08 Feb 2019
Application note Semiconductor and IC Package Thermal Metrics (Rev. C) PDF | HTML 19 Apr 2016
Technical article When to use load switches in place of discrete MOSFETs 03 Feb 2016
Technical article 48V systems: Driving power MOSFETs efficiently and robustly 08 Oct 2015

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Simulation model

CSD75208W1015 Unencrypted PSpice Model (Rev. A) CSD75208W1015 Unencrypted PSpice Model (Rev. A)

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Reference designs

TIDA-00488 — Energy Harvesting Ambient Light and Environment Sensor Node for Sub-1GHz Networks Reference Design

TIDA-00488 demonstrates an ultra-low power and a renewable method of wireless environmental sensing using daylight energy harvesting with a long backup battery life. This reference design uses our ultra-low power harvester power management SimpleLink™ ultra-low power sub-1 GHz wireless (...)
document-pdfAcrobat Schematic
Reference designs

TIDA-00712 — Smartwatch Battery Management Solution Reference Design

This reference design is for smartwatch battery management solution (BMS). It is suitable for low-power wearable devices like smartwatch applications. The design includes an ultra-low current 1 cell Li-ion linear charger; a highly integrated Qi-compliant wireless power receiver; a (...)
document-pdfAcrobat Schematic
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DSBGA (YZC) 6 View options

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