102-V max 3-phase smart gate driver with current shunt amplifiers and extended temperature
Product details
Parameters
Package | Pins | Size
Features
- 9 to 100-V, Triple half-bridge gate driver
-
Extended TA operation -55 °C to 125 °C
- Optional triple low-side current shunt amplifiers
-
- Smart gate drive architecture
- Adjustable slew rate control for EMI performance
- VGS handshake and minimum dead-time insertion to prevent shoot-through
- 50-mA to 1-A peak source current
- 100-mA to 2-A peak sink current
- dV/dt mitigation through strong pulldown
- Integrated gate driver power supplies
- High-side doubler charge pump For 100% PWM duty cycle control
- Low-side linear regulator
- Integrated triple current shunt amplifiers
- Adjustable gain (5, 10, 20, 40 V/V)
- Bidirectional or unidirectional support
- 6x, 3x, 1x, and independent PWM modes
- Supports 120° sensored operation
- SPI or hardware interface available
- Low-power sleep mode (20 µA at VVM = 48-V)
- Integrated protection features
- VM undervoltage lockout (UVLO)
- Gate drive supply undervoltage (GDUV)
- MOSFET VDS overcurrent protection (OCP)
- MOSFET shoot-through prevention
- Gate driver fault (GDF)
- Thermal warning and shutdown (OTW/OTSD)
- Fault condition indicator (nFAULT)
All trademarks are the property of their respective owners.
Description
The DRV8353M family of devices are highly-integrated gate drivers for three-phase brushless DC (BLDC) motor applications. These applications include field-oriented control (FOC), sinusoidal current control, and trapezoidal current control of BLDC motors. The device variants provide optional integrated current shunt amplifiers to support different motor control schemes and a buck regulator to power the gate driver or external controller.
The DRV8353M uses smart gate drive (SGD) architecture to decrease the number of external components that are typically necessary for MOSFET slew rate control and protection circuits. The SGD architecture also optimizes dead time to prevent shoot-through conditions, provides flexibility in decreasing electromagnetic interference (EMI) by MOSFET slew rate control, and protects against gate short circuit conditions through VGS monitors. A strong gate pulldown circuit helps prevent unwanted dV/dt parasitic gate turn on events
Various PWM control modes (6x, 3x, 1x, and independent) are supported for simple interfacing to the external controller. These modes can decrease the number of outputs required of the controller for the motor driver PWM control signals. This family of devices also includes 1x PWM mode for simple sensored trapezoidal control of a BLDC motor by using an internal block commutation table.
Technical documentation
Type | Title | Date | |
---|---|---|---|
* | Datasheet | DRV8353M 100-V Three-Phase Smart Gate Driver datasheet | Mar. 31, 2020 |
Technical articles | A basic brushless gate driver design – part 3: integrated vs. discrete half bridges | Dec. 16, 2020 | |
Technical articles | Connectivity helps integrate intelligent motor control on a single MCU | Jun. 06, 2018 | |
Technical articles | Cut the power and complexity of your appliance designs | Feb. 06, 2018 | |
Technical articles | Six weird ways to design with a brushless-DC driver | Aug. 28, 2017 |
Design & development
For additional terms or required resources, click any title below to view the detail page where available.Hardware development
Description
The DRV8353RH-EVM is a 15A, 3-phase brushless DC drive stage based on the DRV8353RH gate driver and CSD19532Q5B NexFET™ MOSFETs.
The module has individual DC bus and phase voltage sense as well as individual low-side current shunt amplifiers, making this evaluation module ideal for sensorless BLDC (...)
Features
- 9- to 95-V operation
- 15 A continuous / 20 A peak H-bridge output current
- Internal buck regulator
- Three individual, internal low-side current shunt amplifiers
- INSTASPIN FOC firmware available
Description
The DRV8353RS-EVM is a 15A, 3-phase brushless DC drive stage based on the DRV8353RS gate driver and CSD19532Q5B NexFET™ MOSFETs.
The module has individual DC bus and phase voltage sense as well as individual low-side current shunt amplifiers, making this evaluation module ideal for sensorless BLDC (...)
Features
- 9- to 95-V operation
- 15 A continuous / 20 A peak H-bridge output current
- Internal buck regulator
- Three individual, internal low-side current shunt amplifiers
- INSTASPIN FOC firmware available
CAD/CAE symbols
Package | Pins | Download |
---|---|---|
WQFN (RTA) | 40 | View options |
Ordering & quality
- RoHS
- REACH
- Device marking
- Lead finish/Ball material
- MSL rating/Peak reflow
- MTBF/FIT estimates
- Material content
- Qualification summary
- Ongoing reliability monitoring
Recommended products may have parameters, evaluation modules or reference designs related to this TI product.
Support & training
TI E2E™ forums with technical support from TI engineers
Content is provided "as is" by TI and community contributors and does not constitute TI specifications. See terms of use.
If you have questions about quality, packaging or ordering TI products, see TI support.