Product details

Number of channels (#) 1 Isolation rating (Vrms) 5700 Power switch IGBT Peak output current (A) 5 DIN V VDE V 0884-10 transient overvoltage rating (Vpk) 8000 DIN V VDE V 0884-10 working voltage (Vpk) 1420 Output VCC/VDD (Max) (V) 30 Output VCC/VDD (Min) (V) 15 Input VCC (Min) (V) 3 Input VCC (Max) (V) 5.5 Prop delay (ns) 76 Operating temperature range (C) -40 to 125 Undervoltage lockout (Typ) 12
Number of channels (#) 1 Isolation rating (Vrms) 5700 Power switch IGBT Peak output current (A) 5 DIN V VDE V 0884-10 transient overvoltage rating (Vpk) 8000 DIN V VDE V 0884-10 working voltage (Vpk) 1420 Output VCC/VDD (Max) (V) 30 Output VCC/VDD (Min) (V) 15 Input VCC (Min) (V) 3 Input VCC (Max) (V) 5.5 Prop delay (ns) 76 Operating temperature range (C) -40 to 125 Undervoltage lockout (Typ) 12
SOIC (DW) 16 77 mm² 10.3 x 7.5
  • 50-kV/μs Minimum and 100-kV/μs Typical Common-Mode Transient Immunity (CMTI)
    at VCM = 1500 V
  • 2.5-A Peak Source and 5-A Peak Sink Currents
  • Short Propagation Delay: 76 ns (Typ),
    110 ns (Max)
  • 2-A Active Miller Clamp
  • Output Short-Circuit Clamp
  • Fault Alarm upon Desaturation Detection is Signaled on FLT and Reset Through RST
  • Input and Output Under Voltage Lock-Out (UVLO) with Ready (RDY) Pin Indication
  • Active Output Pull-down and Default Low Outputs with Low Supply or Floating Inputs
  • 3-V to 5.5-V Input Supply Voltage
  • 15-V to 30-V Output Driver Supply Voltage
  • CMOS Compatible Inputs
  • Rejects Input Pulses and Noise Transients Shorter Than 20 ns
  • Operating Temperature: –40°C to +125°C Ambient
  • Isolation Surge Withstand Voltage 10000-VPK
  • Safety-Related Certifications:
    • 8000-VPK VIOTM and 1420-VPK VIORM Reinforced Isolation per DIN V VDE V 0884-10 (VDE V 0884-10):2006-12
    • 5700-VRMS Isolation for 1 Minute per UL 1577
    • CSA Component Acceptance Notice 5A, IEC 60950–1 and IEC 60601–1 End Equipment Standards
    • TUV Certification per EN 61010-1 and EN 60950-1
    • GB4943.1-2011 CQC Certification

All trademarks are the property of their respective owners.

  • 50-kV/μs Minimum and 100-kV/μs Typical Common-Mode Transient Immunity (CMTI)
    at VCM = 1500 V
  • 2.5-A Peak Source and 5-A Peak Sink Currents
  • Short Propagation Delay: 76 ns (Typ),
    110 ns (Max)
  • 2-A Active Miller Clamp
  • Output Short-Circuit Clamp
  • Fault Alarm upon Desaturation Detection is Signaled on FLT and Reset Through RST
  • Input and Output Under Voltage Lock-Out (UVLO) with Ready (RDY) Pin Indication
  • Active Output Pull-down and Default Low Outputs with Low Supply or Floating Inputs
  • 3-V to 5.5-V Input Supply Voltage
  • 15-V to 30-V Output Driver Supply Voltage
  • CMOS Compatible Inputs
  • Rejects Input Pulses and Noise Transients Shorter Than 20 ns
  • Operating Temperature: –40°C to +125°C Ambient
  • Isolation Surge Withstand Voltage 10000-VPK
  • Safety-Related Certifications:
    • 8000-VPK VIOTM and 1420-VPK VIORM Reinforced Isolation per DIN V VDE V 0884-10 (VDE V 0884-10):2006-12
    • 5700-VRMS Isolation for 1 Minute per UL 1577
    • CSA Component Acceptance Notice 5A, IEC 60950–1 and IEC 60601–1 End Equipment Standards
    • TUV Certification per EN 61010-1 and EN 60950-1
    • GB4943.1-2011 CQC Certification

All trademarks are the property of their respective owners.

The ISO5451 is a 5.7-kVRMS, reinforced isolated gate driver for IGBTs and MOSFETs with 2.5-A source and 5-A sink current. The input side operates from a single 3-V to 5.5-V supply. The output side allows for a supply range from minimum 15 V to maximum 30 V. Two complementary CMOS inputs control the output state of the gate driver. The short propagation time of 76 ns assures accurate control of the output stage.

An internal desaturation (DESAT) fault detection recognizes when the IGBT is in an overload condition. Upon a DESAT detect, the gate driver output is driven low to VEE2 potential, turning the IGBT immediately off.

When desaturation is active, a fault signal is sent across the isolation barrier, pulling the FLT output at the input side low and blocking the isolator input. The FLT output condition is latched and can be reset through a low-active pulse at the RST input.

When the IGBT is turned off during normal operation with bipolar output supply, the output is hard clamp to VEE2. If the output supply is unipolar, an active Miller clamp can be used, allowing Miller current to sink across a low impedance path, preventing IGBT to be dynamically turned on during high voltage transient conditions.

The readiness for the gate driver to be operated is under the control of two undervoltage-lockout circuits monitoring the input side and output side supplies. If either side has insufficient supply the RDY output goes low, otherwise this output is high.

The ISO5451 is available in a 16-pin SOIC package. Device operation is specified over a temperature range from –40°C to +125°C ambient.

For all available packages, see the orderable addendum at the end of the data sheet.

The ISO5451 is a 5.7-kVRMS, reinforced isolated gate driver for IGBTs and MOSFETs with 2.5-A source and 5-A sink current. The input side operates from a single 3-V to 5.5-V supply. The output side allows for a supply range from minimum 15 V to maximum 30 V. Two complementary CMOS inputs control the output state of the gate driver. The short propagation time of 76 ns assures accurate control of the output stage.

An internal desaturation (DESAT) fault detection recognizes when the IGBT is in an overload condition. Upon a DESAT detect, the gate driver output is driven low to VEE2 potential, turning the IGBT immediately off.

When desaturation is active, a fault signal is sent across the isolation barrier, pulling the FLT output at the input side low and blocking the isolator input. The FLT output condition is latched and can be reset through a low-active pulse at the RST input.

When the IGBT is turned off during normal operation with bipolar output supply, the output is hard clamp to VEE2. If the output supply is unipolar, an active Miller clamp can be used, allowing Miller current to sink across a low impedance path, preventing IGBT to be dynamically turned on during high voltage transient conditions.

The readiness for the gate driver to be operated is under the control of two undervoltage-lockout circuits monitoring the input side and output side supplies. If either side has insufficient supply the RDY output goes low, otherwise this output is high.

The ISO5451 is available in a 16-pin SOIC package. Device operation is specified over a temperature range from –40°C to +125°C ambient.

For all available packages, see the orderable addendum at the end of the data sheet.

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Technical documentation

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Type Title Date
* Data sheet ISO5451 High-CMTI 2.5-A and 5-A Isolated IGBT, MOSFET Gate Driver With Active Protection Features datasheet (Rev. C) 16 Jan 2017
Application note Digital Isolator Design Guide (Rev. D) 15 Nov 2021
Certificate VDE Certificate for Reinforced Isolation for DIN VDE V 0884-11:2017-01 (Rev. Q) 12 Nov 2021
Certificate TUV Certificate for Isolation Devices (Rev. J) 23 Aug 2021
Certificate CQC Certification (Rev. G) 19 Aug 2021
Certificate CSA Certification (Rev. Q) 14 Jun 2021
Certificate UL Certification (Rev. O) 03 Feb 2021
E-book Ein Techniker-Leitfaden für Industrieroboter-Designs 25 Mar 2020
Application note External Gate Resistor Selection Guide (Rev. A) 28 Feb 2020
Application note Understanding Peak IOH and IOL Currents (Rev. A) 28 Feb 2020
E-book E-book: An engineer’s guide to industrial robot designs 12 Feb 2020
White paper Isolation in AC Motor Drives: Understanding the IEC 61800-5-1 Safety Standard (Rev. A) 19 Sep 2019
Technical article How to achieve higher system robustness in DC drives, part 3: minimum input pulse 19 Sep 2018
Analog design journal Pushing the envelope with high-performance digital-isolation technology (Rev. A) 22 Aug 2018
White paper Demystifying high-voltage power electronics for solar inverters 06 Jun 2018
Technical article How to achieve higher system robustness in DC drives, part 2: interlock and deadtime 30 May 2018
Technical article Boosting efficiency for your solar inverter designs 24 May 2018
White paper Isolation in solar power converters: Understanding the IEC62109-1 safety standar (Rev. A) 18 May 2018
Technical article How to achieve higher system robustness in DC drives, part 1: negative voltage 17 Apr 2018
Analog design journal 4Q 2015 Analog Applications Journal 30 Oct 2015
Analog design journal Pushing the envelope with high-performance digital-isolation technology 30 Oct 2015
User guide ISO5851 Evaluation Module User's Guide 19 Jun 2015
White paper Understanding electromagnetic compliance tests in digital isolators 17 Oct 2014
White paper High-voltage reinforced isolation: Definitions and test methodologies 16 Oct 2014
Application note Shelf-Life Evaluation of Lead-Free Component Finishes 24 May 2004

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

ISO5851EVM — ISO5851 evaluation module (EVM)

This evaluation module, featuring ISO5851 reinforced isolated gate driver device, allows designers to evaluate device AC and DC performance with a pre-populated 1-nF load or with a user-installed IGBT in either of the standard TO-247 or TO-220 packages.

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Simulation model

ISO5451 PSpice Transient Model

SLLM299.ZIP (83 KB) - PSpice Model
Simulation model

ISO5451 PSPICE Unencrypted Model

SLLM448.ZIP (3 KB) - PSpice Model
Simulation tool

PSPICE-FOR-TI — PSpice® for TI design and simulation tool

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
Reference designs

TIDA-00638 — Reference Design for Isolated Gate Driver Power Stage with Active Miller Clamp for Solar Inverters

This reference design consists of a single module with a reinforced, isolated IGBT gate driver with a dedicated gate drive power supply. This compact reference design controls IGBTs in solar inverters.  The design uses a reinforced isolated IGBT gate driver with built-in IGBT DESAT detection (...)
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