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Product details

Parameters

Number of channels (#) 1 Power switch MOSFET Peak output current (A) 7 Input VCC (Min) (V) 3.5 Input VCC (Max) (V) 14 Features Negative Output Voltage Capability Operating temperature range (C) -40 to 125 Rise time (ns) 14 Fall time (ns) 12 Prop delay (ns) 25 Input threshold TTL Channel input logic Inverting, Non-Inverting Input negative voltage (V) 0 Rating Catalog open-in-new Find other Low-side drivers

Package | Pins | Size

HVSSOP (DGN) 8 15 mm² 3 x 4.9 WSON (NGG) 6 9 mm² 3 x 3 open-in-new Find other Low-side drivers

Features

  • LM5112-Q1 is Qualified for Automotive Applications
  • AEC-Q100 Grade 1 Qualified
  • Manufactured on an Automotive Grade Flow
  • Compound CMOS and Bipolar Outputs Reduce Output Current Variation
  • 7-A Sink and 3-A Source Current
  • Fast Propagation Times: 25 ns (Typical)
  • Fast Rise and Fall Times: 14 ns or 12 ns
    Rise or Fall With 2-nF Load
  • Inverting and Non-Inverting Inputs Provide Either Configuration With a Single Device
  • Supply Rail Undervoltage Lockout Protection
  • Dedicated Input Ground (IN_REF) for
    Split Supply or Single Supply Operation
  • Power Enhanced 6-Pin WSON Package
    (3 mm × 3 mm) or Thermally Enhanced
    MSOP-PowerPAD Package
  • Output Swings From VCC to VEE Which Are Negative Relative to Input Ground
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Description

The LM5112 device MOSFET gate driver provides high peak gate drive current in the tiny 6-pin WSON package (SOT-23 equivalent footprint) or an 8-pin exposed-pad MSOP package with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7 A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Undervoltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turnon voltage. The LM5112 device provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.

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Technical documentation

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Hardware development

EVALUATION BOARDS Download
document-generic User guide
$49.00
Description
The UCC2742xQ1 EVM is a high-speed dual MOSFET evaluation module that provides a test platform for a quick and easy startup of the UCC2742xQ1 driver. Powered by a single 4V to 15V external supply, and featuring a comprehensive set of test points and jumpers. All of the devices have separate input (...)
Features
  • Three different UCC2742x-Q1 devices
  • Independent signal inputs
  • Common enable pin
  • Output FET support

Design tools & simulation

SIMULATION MODELS Download
SNVM300.ZIP (73 KB) - PSpice Model
SIMULATION MODELS Download
SNVM390.ZIP (8 KB) - TINA-TI Spice Model
SIMULATION MODELS Download
SNVM391.TSC (579 KB) - TINA-TI Reference Design
SIMULATION MODELS Download
SNVMAD6.ZIP (1 KB) - PSpice Model

CAD/CAE symbols

Package Pins Download
HVSSOP (DGN) 8 View options
WSON (NGG) 6 View options

Ordering & quality

Support & training

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