LM61460

• Functional Safety-Capable
  • Documentation available to aid functional safety system design
• Optimized for ultra low EMI requirements
  • Hotrod™ package and parallel input path minimize switch node ringing
  • Adjustable SW node rise time
• Designed for reliable and rugged applications
  • Supports 42-V transients
  • ±1% total output regulation accuracy
  • V_OUT adjustable from 1 V to 95% of V_IN
  • 0.4-V dropout with 4-A load (typical)
  • Protection features: thermal shutdown, input undervoltage lockout, cycle-by-cycle current limit, hiccup short-citcuit protection
• High efficiency power conversion at all loads
  • 7-µA no load current at 13.5 V_IN, 3.3 V_OUT
  • 83% PFM efficiency at 1-mA, 13.5 V_IN, 5 V_OUT
  • Low MOSFET ON resistance
    • R_{DS_ON_HS} = 41 mΩ (typical)
    • R_{DS_ON_LS} = 21 mΩ (typical)
  • External bias option for improved efficiency
• Suitable for scalable power supplies
  • Pin compatible with:
    • LM61440-Q1 (36 V, 4 A, adjustable f_SW)
    • LM61440 (36 V, 4 A, adjustable f_SW)
    • LMQ61460 (36 V, 6 A, internal caps)

The LM61460 is a high-performance, DC-DC synchronous step-down converter. With integrated high-side and low-side MOSFETs, up to 6 A of output current is delivered over a wide input range of 3.0 V to 36 V; tolerant of 42 V, easing input surge protection design. The LM61460 implements soft recovery from dropout eliminating overshoot on the output.

The LM61460 is specifically designed for minimal EMI. The device incorporates adjustable SW node rise time, low-EMI VQFN-HR package featuring low switch node ringing, and optimized pinout for ease of use. The switching frequency can be set or synchronized between 200 kHz and 2.2 MHz to avoid noise sensitive frequency bands. In addition the frequency can be selected for improved efficiency at low operating frequency or smaller solution size at high operating frequency.

Auto-mode enables frequency foldback when operating at light loads, allowing an unloaded current consumption of only 7 µA (typical) and high light load efficiency. Seamless transition between PWM and PFM modes, along with very low MOSFET ON resistances and an external bias input, ensures exceptional efficiency across the entire load range.

Electrical characteristics are specified over a junction temperature range of –40°C to +150°C. Find additional resources in the Related Documentation.