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Product details

Parameters

Type Transimpedance and limiting amplifier Data rate (Max) (Gbps) 11.3 ICC (Typ) (mA) 28 ICC (Max) (mA) 40 DJ (Typ) (ps) 6 Operating temperature range (C) -40 to 100 open-in-new Find other Optical networking ICs

Features

  • 9-GHz Bandwidth
  • 10-kΩ Differential Small Signal
    Transimpedance
  • –20-dBm Sensitivity
  • 0.9-µARMS Input Referred Noise
  • 2.5-mAp-p Input Overload Current
  • Received Signal Strength Indication
    (RSSI)
  • 92-mW Typical Power Dissipation
  • CML Data Outputs With On-Chip
    50-Ω Back-Termination
  • On Chip Supply Filter Capacitor
  • Single +3.3-V Supply
  • Die Size: 870 µm x 1036 µm
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Description

The ONET8551T device is a high-speed, high-gain, limiting transimpedance amplifier used in optical receivers with data rates up to 11.3 Gbps. It features low-input referred noise, 9-GHz bandwidth, 10-kΩ small signal transimpedance, and a received signal strength indicator (RSSI.

The ONET8551T device is available in die form, includes an on-chip VCC bypass capacitor, and is optimized for packaging in a TO can.

The ONET8551T device requires a single +3.3-V supply. The power-efficient design typically dissipates less than 95 mW. The device is characterized for operation from –40°C to 100°C case (IC back-side) temperature.

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Special Note

To request an ONET8551T device model please send request here.

Technical documentation

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* Data sheet 11.3 Gbps Limiting Transimpedance Amplifier With RSSI, ONET8551T datasheet Oct. 24, 2013

Design & development

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Reference designs

REFERENCE DESIGNS Download
Complete reference design for TI's ONET parts in a 10G SFP+ LR Optical Module compatible form factor
TIDA-00088 This Texas Instruments Reference Design was designed to demonstrate the optical performance of the ONET1151L Laser Driver, the ONET8551T high gain Transimpedance Amplifier (TIA) and the ONET1151P Limiting Amplifier. It is available in a form factor that is compatible with 10.3125Gbps SFP+ LR Optical (...)
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