UCC21220A

• Supports basic and functional isolation
• CMTI greater than 100-V/ns
• 4-A peak source, 6-A peak sink output
• Switching parameters:
  • 40-ns maximum propagation delay
  • 5-ns maximum delay matching
  • 5.5-ns maximum pulse-width distortion
  • 35-µs maximum VDD power-up delay
• Up to 18-V VDD output drive supply
  • 5-V and 8-V VDD UVLO Options
• Operating temp. range (T_A) –40°C to 125°C
• Narrow body SOIC-16 (D) package
• Rejects input pulses shorter than 5-ns
• TTL and CMOS compatible inputs
• Safety-related certifications:
  • 4242-V_PK isolation per DIN V VDE V 0884-11:2017-01 and DIN EN 61010-1 (planned)
  • 3000-V_RMS isolation for 1 minute per UL 1577
  • CQC certification per GB4943.1-2011 (planned)

The UCC21220 and UCC21220A devices are basic and functional isolated dual-channel gate drivers with 4-A peak-source and 6-A peak-sink current. They are designed to drive power MOSFETs and GaNFETs in PFC, Isolated DC/DC, and synchronous rectification applications, with fast switching performance and robust ground bounce protection through greater than 100-V/ns common-mode transient immunity (CMTI).

These devices can be configured as two low-side drivers, two high-side drivers, or half-bridge drivers. Two outputs can be paralleled to form a single driver which doubles the drive strength for heavy load conditions due to the best-in-class delay matching performance.

Protection features include: DIS pin shuts down both outputs simultaneously when it is set high; INA/B pin rejects input transient shorter than 5-ns; both inputs and outputs can withstand –2-V spikes for 200-ns, all supplies have undervoltage lockout (UVLO), and active pull down protection clamps the output below 2.1-V when unpowered or floated.

With these features, these devices enable high efficiency, high power density, and robustness in a wide variety of power applications.