The UCC21222-Q1 device is an isolated dual channel gate driver with programmable dead time and wide temperature range. This device exhibits consistent performance and robustness under extreme temperature conditions. It is designed with 4-A peak-source and 6-A peak-sink current to drive power MOSFET, IGBT, and GaN transistors.
The UCC21222-Q1 device can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. 5ns delay matching performance allows two outputs to be paralleled, doubling the drive strength for heavy load conditions without risk of internal shoot-through.
The input side is isolated from the two output drivers by a 3.0-kVRMS isolation barrier, with a minimum of 100-V/ns common-mode transient immunity (CMTI).
Resistor programmable dead time gives the capability to adjust dead time for system constraints to improve efficiency and prevent output overlap. Other protection features include: Disable feature to shut down both outputs simultaneously when DIS is set high, integrated deglitch filter that rejects input transients shorter than 5-ns, and negative voltage handling for up to -2-V spikes for 200-ns on input and output pins. All supplies have UVLO protection.