The UCC218200-Q1 is a galvanically isolated single-channel
gate driver designed for SiC MOSFETs and IGBTs up to 1500V DC operating voltage with
advanced protection features, best-in-class dynamic performance, and robustness. The UCC218200-Q1 has up to ±15A peak source and sink
current.
The input side is isolated from the output
side with SiO2 isolation technology, supporting up to 1.06kVRMS
working voltage, 10kVPK surge immunity with longer than 40-years isolation
barrier life, as well as providing low part-to-part skew, and >200V/ns common-mode
noise immunity (CMTI).
The UCC218200-Q1 includes state-of-art protection features such as fast overcurrent and short circuit detection,
controlled soft shutdown after a fault, fault reporting, active Miller clamp, input and
output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness,
active short circuit inputs on both the
primary and secondary sides, output voltage gate
monitoring, and built-in self
test during startup.
The UCC218200-Q1 is a galvanically isolated single-channel
gate driver designed for SiC MOSFETs and IGBTs up to 1500V DC operating voltage with
advanced protection features, best-in-class dynamic performance, and robustness. The UCC218200-Q1 has up to ±15A peak source and sink
current.
The input side is isolated from the output
side with SiO2 isolation technology, supporting up to 1.06kVRMS
working voltage, 10kVPK surge immunity with longer than 40-years isolation
barrier life, as well as providing low part-to-part skew, and >200V/ns common-mode
noise immunity (CMTI).
The UCC218200-Q1 includes state-of-art protection features such as fast overcurrent and short circuit detection,
controlled soft shutdown after a fault, fault reporting, active Miller clamp, input and
output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness,
active short circuit inputs on both the
primary and secondary sides, output voltage gate
monitoring, and built-in self
test during startup.