The AFE10004 is a highly integrated, autonomous,
power-amplifier (PA) precision analog front end (AFE) that includes four temperature
compensation digital-to-analog converters (DACs), integrated EEPROM, and gate bias
switches. The four DACs are programmed by four, independent, user-defined,
temperature-to-voltage transfer functions stored in the internal EEPROM, allowing
any temperature effects to be corrected without additional external circuitry. After
start up, the device operates without intervention from a system controller to
provide a complete system for setting and compensating bias voltages in control
applications.
The AFE10004 has four gate bias outputs that are
switched on and off through dedicated control pins. The gate bias switches are
designed for fast response. In combination with the device PA_ON pin, this fast
response enables correct power sequencing and protection of depletion-mode
transistors, such as GaAs and GaN.
The function integration and wide operating
temperature range make the AFE10004 an excellent choice as an all-in-one, autonomous
bias control circuit for the power amplifiers found in RF systems. The flexible DAC
output ranges and built-in sequencing features let the device be used as a biasing
controller for a large variety of transistor technologies, such as LDMOS, GaAs, and
GaN. Contact TI sales for the full data sheet.
The AFE10004 is a highly integrated, autonomous,
power-amplifier (PA) precision analog front end (AFE) that includes four temperature
compensation digital-to-analog converters (DACs), integrated EEPROM, and gate bias
switches. The four DACs are programmed by four, independent, user-defined,
temperature-to-voltage transfer functions stored in the internal EEPROM, allowing
any temperature effects to be corrected without additional external circuitry. After
start up, the device operates without intervention from a system controller to
provide a complete system for setting and compensating bias voltages in control
applications.
The AFE10004 has four gate bias outputs that are
switched on and off through dedicated control pins. The gate bias switches are
designed for fast response. In combination with the device PA_ON pin, this fast
response enables correct power sequencing and protection of depletion-mode
transistors, such as GaAs and GaN.
The function integration and wide operating
temperature range make the AFE10004 an excellent choice as an all-in-one, autonomous
bias control circuit for the power amplifiers found in RF systems. The flexible DAC
output ranges and built-in sequencing features let the device be used as a biasing
controller for a large variety of transistor technologies, such as LDMOS, GaAs, and
GaN. Contact TI sales for the full data sheet.