The AFE10004-EP is a highly integrated, autonomous, power-amplifier (PA)
precision analog front end (AFE) that includes four temperature compensation
digital-to-analog converters (DACs), integrated EEPROM, and gate bias switches. The
four DACs are programmed by four independent, user-defined, temperature-to-voltage
transfer functions stored in the internal EEPROM. This design allows correction any
temperature effects to be corrected without additional external circuitry. After
start-up, the device operates without intervention from a system controller to
provide a complete system for setting and compensating bias voltages in control
applications.
The AFE10004-EP has four gate bias outputs that are switched on and off
through dedicated control pins. The gate bias switches are designed for fast
response. In combination with the device PA_ON pin, this fast response enables
correct power sequencing and protection of depletion-mode transistors, such as GaAs
and GaN.
The function integration and wide
operating temperature range make the AFE10004-EP an
excellent choice as an all-in-one, autonomous bias control circuit for the power
amplifiers found in RF systems. The flexible DAC output ranges and built-in
sequencing features let the device be used as a biasing controller for a large
variety of transistor technologies, such as LDMOS, GaAs, and GaN.
The AFE10004-EP is a highly integrated, autonomous, power-amplifier (PA)
precision analog front end (AFE) that includes four temperature compensation
digital-to-analog converters (DACs), integrated EEPROM, and gate bias switches. The
four DACs are programmed by four independent, user-defined, temperature-to-voltage
transfer functions stored in the internal EEPROM. This design allows correction any
temperature effects to be corrected without additional external circuitry. After
start-up, the device operates without intervention from a system controller to
provide a complete system for setting and compensating bias voltages in control
applications.
The AFE10004-EP has four gate bias outputs that are switched on and off
through dedicated control pins. The gate bias switches are designed for fast
response. In combination with the device PA_ON pin, this fast response enables
correct power sequencing and protection of depletion-mode transistors, such as GaAs
and GaN.
The function integration and wide
operating temperature range make the AFE10004-EP an
excellent choice as an all-in-one, autonomous bias control circuit for the power
amplifiers found in RF systems. The flexible DAC output ranges and built-in
sequencing features let the device be used as a biasing controller for a large
variety of transistor technologies, such as LDMOS, GaAs, and GaN.