The DRV7163A device is a family of 100V half-bridge power stages, with integrated gate-driver and enhancement-mode gallium nitride (GaN) FETs. The devices consist of a high-frequency GaN FET driver in a half-bridge configuration, that drives two 100V GaN FETs.
GaN FETs provide significant advantages for power conversion as GaN FETs have zero reverse recovery and very small input capacitance (CISS) and output capacitance (COSS). All the devices are mounted on a completely bond-wire free package platform with minimized package parasitic elements, which can be easily mounted on PCBs.
The TTL logic compatible inputs support 3.3V and 5V logic levels, regardless of the GVDD voltage. A proprietary bootstrap voltage control technique regulates the gate voltages of the enhancement mode GaN FETs within the safe operating range. The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. The device is an excellent option for applications requiring high-frequency, high-efficiency operation in a small form factor.
| Documentación principal | Tipo | Título | Opciones de formato | Fecha |
|---|---|---|---|---|
| * | Data sheet | DRV7163A 100V GaN Half-Bridge Power Stage datasheet | PDF | HTML | 24 jul 2026 |
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| Encapsulado | Pines | Símbolos CAD, huellas y modelos 3D |
|---|---|---|
| UNKNOWN (RAR) | 17 | Ultra Librarian |
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