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DRV8334-Q1

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Controlador de compuerta automotriz trifásico para baterías de 12 V y 24 V con detección precisa de

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DRV8334-Q1

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Detalles del producto

Rating Automotive Architecture Gate driver Control interface 1xPWM, 3xPWM, 6xPWM, SPI Gate drive (A) 1 Vs (min) (V) 4.5 Vs ABS (max) (V) 65 Features Current sense Amplifier, Phase Comparators, SPI/I2C, Watchdog timer Operating temperature range (°C) -40 to 150 TI functional safety category Functional Safety-Compliant
Rating Automotive Architecture Gate driver Control interface 1xPWM, 3xPWM, 6xPWM, SPI Gate drive (A) 1 Vs (min) (V) 4.5 Vs ABS (max) (V) 65 Features Current sense Amplifier, Phase Comparators, SPI/I2C, Watchdog timer Operating temperature range (°C) -40 to 150 TI functional safety category Functional Safety-Compliant
VQFN (RGZ) 48 49 mm² (7 mm × 7 mm) HTQFP (PHP) 48 81 mm² (9 mm × 9 mm)
  • AEC-Q100 qualified for automotive applications. Temperature options:
    • DRV8334EPHP: –40°C to +150°C, TA
    • DRV8334QPHP: –40°C to +125°C,TA
  • Three phase half-bridge gate driver
    • Drives six N-channel MOSFETs (NMOS)
    • 4.5 to 60V wide operating voltage range
    • Bootstrap architecture for high-side gate driver
    • Strong GVDD charge pump to support up to 50mA average gate switching current enables driving 400nC MOSFETs at 20kHz
    • Trickle charge pump to support 100% PWM duty cycle and to generate overdrive supply to drive external protection circuits
  • Smart Gate Drive architecture
    • 45-level configurable peak gate drive current up to 1000 / 2000mA (source / sink)
    • Three-step dynamic drive current control
    • Configurable soft shutdown to minimize inductive voltage spikes during overcurrent shutdown
  • Low-side Current Sense Amplifier
    • Sub-1mV low input offset across temperature
    • 9-level adjustable gain
  • SPI-based detailed configuration and diagnostics
  • DRVOFF pin to disable driver independently
  • High voltage wake up pin (nSLEEP)
  • 6x, 3x, 1x, and Independent PWM Modes
  • Supports 3.3V, and 5V Logic Inputs
  • Optional programmable OTP for reset settings
  • Integrated protection features
    • Battery and power supply voltage monitors
    • Phase feedback comparator
    • MOSFET VDS and Rsense over current monitors
    • MOSFET VGS gate fault monitors
    • Device thermal warning and shutdown
    • Fault condition indicator pin
  • AEC-Q100 qualified for automotive applications. Temperature options:
    • DRV8334EPHP: –40°C to +150°C, TA
    • DRV8334QPHP: –40°C to +125°C,TA
  • Three phase half-bridge gate driver
    • Drives six N-channel MOSFETs (NMOS)
    • 4.5 to 60V wide operating voltage range
    • Bootstrap architecture for high-side gate driver
    • Strong GVDD charge pump to support up to 50mA average gate switching current enables driving 400nC MOSFETs at 20kHz
    • Trickle charge pump to support 100% PWM duty cycle and to generate overdrive supply to drive external protection circuits
  • Smart Gate Drive architecture
    • 45-level configurable peak gate drive current up to 1000 / 2000mA (source / sink)
    • Three-step dynamic drive current control
    • Configurable soft shutdown to minimize inductive voltage spikes during overcurrent shutdown
  • Low-side Current Sense Amplifier
    • Sub-1mV low input offset across temperature
    • 9-level adjustable gain
  • SPI-based detailed configuration and diagnostics
  • DRVOFF pin to disable driver independently
  • High voltage wake up pin (nSLEEP)
  • 6x, 3x, 1x, and Independent PWM Modes
  • Supports 3.3V, and 5V Logic Inputs
  • Optional programmable OTP for reset settings
  • Integrated protection features
    • Battery and power supply voltage monitors
    • Phase feedback comparator
    • MOSFET VDS and Rsense over current monitors
    • MOSFET VGS gate fault monitors
    • Device thermal warning and shutdown
    • Fault condition indicator pin

The DRV8334-Q1 is an integrated smart gate driver for 12V and 24V automotive three-phase BLDC applications. The device provides three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV8334-Q1 generates the correct gate drive voltages using an integrated bootstrap diode and a GVDD charge pump. The Smart Gate Drive architecture supports configurable peak gate drive current from 0.8mA up to 1A source and 2A sink. The DRV8334-Q1 can operate from a single power supply with a wide input range from 4.5 to 60V. A trickle charge pump enables 100% PWM duty cycle control, and provides overdrive supply voltage for external switches.

The DRV8334-Q1 provides low-side current sense amplifiers to support resistor based low-side current sensing. The low offset of the amplifiers enables the system to obtain precise motor current measurement.

A wide range of diagnostics and protection features integrated in the DRV8334-Q1 enable a robust motor drive system design and help eliminate the needs of external components. The highly configurable device response allows the device to be integrated seamlessly into a variety of system designs.

The DRV8334-Q1 is an integrated smart gate driver for 12V and 24V automotive three-phase BLDC applications. The device provides three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV8334-Q1 generates the correct gate drive voltages using an integrated bootstrap diode and a GVDD charge pump. The Smart Gate Drive architecture supports configurable peak gate drive current from 0.8mA up to 1A source and 2A sink. The DRV8334-Q1 can operate from a single power supply with a wide input range from 4.5 to 60V. A trickle charge pump enables 100% PWM duty cycle control, and provides overdrive supply voltage for external switches.

The DRV8334-Q1 provides low-side current sense amplifiers to support resistor based low-side current sensing. The low offset of the amplifiers enables the system to obtain precise motor current measurement.

A wide range of diagnostics and protection features integrated in the DRV8334-Q1 enable a robust motor drive system design and help eliminate the needs of external components. The highly configurable device response allows the device to be integrated seamlessly into a variety of system designs.
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Documentación principal Tipo Título Opciones de formato Descargar la versión más reciente en inglés Fecha
* Hoja de datos DRV8334-Q1 Automotive 24/12V Battery 3-Phase Gate Driver Unit With Accurate Current Sensing and Enhanced Diagnostics datasheet (Rev. A) PDF | HTML 6/02/2026
Application brief Understanding Gate Driver Slew Rate Control, MOSFET Switching Optimization and Protection Features (Rev. A) PDF | HTML 11/12/2025

Diseño y desarrollo

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Placa de evaluación

DRV8334EVM — Módulo de evaluación DRV8334 para controlador de puerta trifásico

El módulo de evaluación (EVM) DRV8334 es una etapa de accionamiento de DC sin escobillas trifásica de 30 A basada en el controlador de puerta DRV8334 para motores de corriente continua sin escobillas (BLDC). El EVM permite evaluar rápidamente el dispositivo DRV8334, que hace girar un motor BLDC (...)
Guía del usuario: PDF | HTML
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Herramienta de cálculo

DRV8334-SMART-GATE-DRIVE-REGISTER-SETTINGS-CALC — Calculator to provide recommended smart gate drive register settings for the DRV8334

This calculator provides initial recommendations for smart gate drive register configurations for the DRV8334 based on user inputs.
Productos y hardware compatibles
Encapsulado Pines Símbolos CAD, huellas y modelos 3D
VQFN (RGZ) 48 Ultra Librarian
HTQFP (PHP) 48 Ultra Librarian
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Pedidos y calidad

Soporte y capacitación

Foros de TI E2E™ con asistencia técnica de los ingenieros de TI

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